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AD8226BRZ-R7

Analog Devices · Instrumentation OpAmps · SOIC-8

AD8226BRZ-R7 from Analog Devices, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 -IN input Negative input of the amplifier; inputs are protected beyond the supplies and can go below ground.
2 RG passive Gain-setting pin; place a gain resistor between pins 2 and 3 (gain is 1 with no resistor).
3 RG passive Gain-setting pin; place a gain resistor between pins 3 and 2 (gain is 1 with no resistor).
4 +IN input Positive input of the amplifier; inputs are protected beyond the supplies and can go below ground.
5 -VS power_in Negative supply; single supply 2.2 V to 36 V or dual supplies ±1.35 V to ±18 V.
6 REF input Reference pin, which must be driven by low impedance and should not exceed either +VS or −VS by more than 0.3 V.
7 VOUT output Amplifier output, developed with respect to the REF pin and rail-to-rail.
8 +VS power_in Positive supply; single supply 2.2 V to 36 V or dual supplies ±1.35 V to ±18 V.

Key specifications

Parameter Value
Manufacturer Analog Devices
Package SOIC-8
Category Amplifiers
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Operating Range (dual supply) 1.35 18 V Dual-supply operation 4
Operating Range (single supply) 2.2 36 V Single-supply operation 6
Temperature Range -40 125 °C 4
Supply Voltage -18 18 V 7
Storage Temperature Range -65 150 °C 7
Maximum Junction Temperature 140 °C 7
ESD Human Body Model 1 kV Human Body Model 7
Common-Mode Rejection Ratio, DC to 60 Hz CMRR 90 dB VCM = −10 V to +10 V, G = 1 3
Input Offset Voltage VOSI 50 µV VS = ±5 V to ±15 V 3
Input Offset Voltage Average Temperature Coefficient VOSI 0.5 1 µV/°C TA = −40°C to +125°C 3
Output Offset Voltage VOSO 400 µV VS = ±5 V to ±15 V 3
Output Offset Voltage Average Temperature Coefficient VOSO 1 5 µV/°C TA = −40°C to +125°C 3
Input Bias Current IB 5 20 27 nA TA = +25°C 3
Input Bias Current IB 5 15 25 nA TA = +125°C 3
Input Bias Current IB 5 30 35 nA TA = −40°C 3
Input Offset Current IOS 0.5 nA TA = +25°C 3
Gain Range G 1 1000 V/V G = 1 + (49.4 kΩ/RG) 4
Gain Error 0.01 % G = 1, VOUT ±10 V 4
Gain Error 0.1 % G = 5 to 1000, VOUT ±10 V 4
Gain vs. Temperature 1 ppm/°C G = 1, TA = −40°C to +85°C 4
Gain vs. Temperature 2 ppm/°C G = 1, TA = 85°C to 125°C 4
Quiescent Current IQ 350 425 µA TA = +25°C 4
Quiescent Current IQ 250 325 µA TA = −40°C 4
Quiescent Current IQ 450 525 µA TA = +85°C 4
Quiescent Current IQ 525 600 µA TA = +125°C 4
Quiescent Current (single supply) IQ 325 400 µA TA = +25°C, −VS = 0 V, +VS = 2.7 V 6
Small-Signal −3 dB Bandwidth BW 1500 kHz G = 1 3
Reference Input Resistance RIN 100 kΩ 3
Slew Rate SR 0.4 V/µs G = 1 4
Thermal Resistance, junction-to-ambient θJA 121 °C/W 8-Lead SOIC, 4-Layer JEDEC Board, free air 7

CAD (KiCad official)

  • Symbol: AD8226BRZ-R7
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: ad8226brz-r7-etched.step / ad8226brz-r7-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ad8226brz-r7.step / ad8226brz-r7.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Analog Devices datasheet (28 pp, sha256 12947a71ac6458aa, retrieved 2026-11-02, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF