AD8226BRMZ from Analog Devices, in a MSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	-IN	input	Negative input of the instrumentation amplifier, which can go below ground and is protected beyond the supplies.
2	RG	passive	Gain-setting pin; place a gain resistor between the two RG pins, and the part defaults to G = 1 when no resistor is used.
3	RG	passive	Gain-setting pin; place a gain resistor between the two RG pins, and the part defaults to G = 1 when no resistor is used.
4	+IN	input	Positive input of the instrumentation amplifier, which can go below ground and is protected beyond the supplies.
5	-VS	power_in	Negative supply; the part operates from ±1.35 V to ±18 V dual or 2.2 V to 36 V single supply.
6	REF	input	Reference terminal that must be driven by low impedance (source impedance kept below 2 Ω for best performance) and should not exceed either supply by more than 0.3 V.
7	VOUT	output	Amplifier output, developed with respect to the REF pin potential, with rail-to-rail output.
8	+VS	power_in	Positive supply; the part operates from ±1.35 V to ±18 V dual or 2.2 V to 36 V single supply.

Key specifications

Parameter	Value
Manufacturer	Analog Devices
Package	MSOP-8
Category	Amplifiers
Pins	8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Common-mode rejection ratio, DC to 60 Hz	CMRR	90			dB	VCM = −10 V to +10 V, G = 1	3
Common-mode rejection ratio, DC to 60 Hz	CMRR	106			dB	VCM = −10 V to +10 V, G = 10	3
Common-mode rejection ratio, DC to 60 Hz	CMRR	120			dB	VCM = −10 V to +10 V, G = 100	3
Common-mode rejection ratio at 5 kHz	CMRR	80			dB	VCM = −10 V to +10 V, G = 1	3
Common-mode rejection ratio at 5 kHz	CMRR	90			dB	VCM = −10 V to +10 V, G = 10	3
Common-mode rejection ratio at 5 kHz	CMRR	100			dB	VCM = −10 V to +10 V, G = 1000	3
Input voltage noise	eNI		22	24	nV/√Hz	f = 1 kHz	3
Output voltage noise	eNO		120	125	nV/√Hz	f = 1 kHz	3
Input offset voltage	VOSI			50	µV	VS = ±5 V to ±15 V	3
Input offset voltage average temperature coefficient	VOSI		0.5	1	µV/°C	TA = −40°C to +125°C	3
Output offset voltage	VOSO			400	µV	VS = ±5 V to ±15 V	3
Output offset voltage average temperature coefficient	VOSO		1	5	µV/°C	TA = −40°C to +125°C	3
Input bias current	IB	5	20	27	nA	TA = +25°C	3
Input bias current	IB	5	15	25	nA	TA = +125°C	3
Input bias current	IB	5	30	35	nA	TA = −40°C	3
Input offset current	IOS			0.5	nA	TA = +25°C	3
Gain range	G	1		1000	V/V	G = 1 + (49.4 kΩ/RG)	4
Gain error	GE			0.01	%	VOUT ±10 V, G = 1	4
Gain error	GE			0.1	%	VOUT ±10 V, G = 5 to 1000	4
Gain nonlinearity				10	ppm	VOUT = −10 V to +10 V, G = 1 to 10, RL ≥ 2 kΩ	4
Gain nonlinearity				75	ppm	VOUT = −10 V to +10 V, G = 100, RL ≥ 2 kΩ	4
Gain nonlinearity				750	ppm	VOUT = −10 V to +10 V, G = 1000, RL ≥ 2 kΩ	4
Gain vs. temperature				1	ppm/°C	G = 1, TA = −40°C to +85°C	4
Gain vs. temperature				2	ppm/°C	G = 1, TA = 85°C to 125°C	4
Dual-supply operating range	VS	1.35		18	V	Dual-supply operation	4
Quiescent current	IQ		350	425	µA	TA = +25°C	4
Quiescent current	IQ		250	325	µA	TA = −40°C	4
Quiescent current	IQ		450	525	µA	TA = +85°C	4
Quiescent current	IQ		525	600	µA	TA = +125°C	4
Specified temperature range	TA	-40		125	°C		4
Supply voltage	VS			18	V		7
Storage temperature range	TSTG	-65		150	°C		7
Maximum junction temperature	TJ			140	°C		7
ESD Human Body Model				1	kV		7
ESD Charge Device Model				1.5	kV		7
ESD Machine Model				100	V		7
Input voltage noise (RTI) G = 1, 0.1 Hz to 10 Hz			2		µV p-p	f = 0.1 Hz to 10 Hz, G = 1	3
Input voltage noise (RTI) G = 10, 0.1 Hz to 10 Hz			0.5		µV p-p	f = 0.1 Hz to 10 Hz, G = 10	3
Input voltage noise (RTI) G = 100 to 1000, 0.1 Hz to 10 Hz			0.4		µV p-p	f = 0.1 Hz to 10 Hz, G = 100 to 1000	3
Input bias current average temperature coefficient	IB		70		pA/°C	TA = −40°C to +125°C	3
Input offset current average temperature coefficient	IOS		5		pA/°C	TA = −40°C to +125°C	3
Reference input resistance	RIN		100		kΩ		3
Reference input current	IIN		7		µA		3
Reference gain to output			1		V/V		3
Small-signal −3 dB bandwidth	BW		1500		kHz	G = 1	3
Small-signal −3 dB bandwidth	BW		160		kHz	G = 10	3
Small-signal −3 dB bandwidth	BW		20		kHz	G = 100	3
Small-signal −3 dB bandwidth	BW		2		kHz	G = 1000	3
Settling time 0.01%	tS		25		µs	10 V step, G = 1	4
Settling time 0.01%	tS		15		µs	10 V step, G = 10	4
Settling time 0.01%	tS		40		µs	10 V step, G = 100	4
Settling time 0.01%	tS		350		µs	10 V step, G = 1000	4
Slew rate	SR		0.4		V/µs	G = 1	4
Slew rate	SR		0.6		V/µs	G = 5 to 100	4
Thermal resistance junction-to-ambient, 8-lead MSOP	θJA		135		°C/W	8-Lead MSOP, 4-Layer JEDEC Board, free air	7

CAD (KiCad official)

Symbol: AD8226BRMZ
Footprint: Package_SO:MSOP-8_3x3mm_P0.65mm
3D model: MSOP-8 (KiCad packages3D, STEP)
3D model files: ad8226brmz-etched.step / ad8226brmz-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ad8226brmz.step / ad8226brmz.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Analog Devices datasheet (28 pp, sha256 12947a71ac6458aa, retrieved 2026-11-02, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

AD8226BRMZ

Verified AD8226BRMZ

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3D Model

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