AD8221BRZ from Analog Devices, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	−IN	input	Negative input terminal of the instrumentation amplifier.
2	RG	passive	Gain setting terminal; place a resistor across the RG pins to set the gain, G = 1 + (49.4 kΩ/RG).
3	RG	passive	Gain setting terminal; place a resistor across the RG pins to set the gain, G = 1 + (49.4 kΩ/RG).
4	+IN	input	Positive input terminal of the instrumentation amplifier.
5	−VS	power_in	Negative power supply terminal (supply range ±2.3 V to ±18 V).
6	REF	input	Reference voltage terminal; drive with a low impedance voltage source to level-shift the output.
7	VOUT	output	Output terminal of the instrumentation amplifier.
8	+VS	power_in	Positive power supply terminal (supply range ±2.3 V to ±18 V).

Key specifications

Parameter	Value
Manufacturer	Analog Devices
Package	SOIC-8
Category	Amplifiers
Pins	8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
CMRR DC to 60 Hz, G=1	CMRR	90			dB	1 kΩ source imbalance, VCM = -10 V to +10 V, G = 1	3
CMRR DC to 60 Hz, G=10	CMRR	110			dB	VCM = -10 V to +10 V, G = 10	3
CMRR DC to 60 Hz, G=100	CMRR	130			dB	VCM = -10 V to +10 V, G = 100	3
CMRR DC to 60 Hz, G=1000	CMRR	140			dB	VCM = -10 V to +10 V, G = 1000	3
CMRR at 10 kHz, G=1	CMRR	80			dB	VCM = -10 V to +10 V, G = 1	3
CMRR at 10 kHz, G=10	CMRR	100			dB	VCM = -10 V to +10 V, G = 10	3
CMRR at 10 kHz, G=100	CMRR	110			dB	VCM = -10 V to +10 V, G = 100	3
CMRR at 10 kHz, G=1000	CMRR	110			dB	VCM = -10 V to +10 V, G = 1000	3
Input Offset Voltage	VOSI			25	µV	VS = ±5 V to ±15 V	3
Input Offset Voltage over temperature	VOSI			45	µV	T = -40°C to +85°C	3
Input Offset Voltage average TC	VOSI TC			0.3	µV/°C	Average TC	3
Output Offset Voltage	VOSO			200	µV	VS = ±5 V to ±15 V	3
Output Offset Voltage over temperature	VOSO			0.45	mV	T = -40°C to +85°C	3
Output Offset Voltage average TC	VOSO TC			5	µV/°C	Average TC	3
Offset RTI vs. Supply (PSR), G=1	PSR	94	110		dB	VS = ±2.3 V to ±18 V, G = 1	3
Offset RTI vs. Supply (PSR), G=10	PSR	114	130		dB	VS = ±2.3 V to ±18 V, G = 10	3
Offset RTI vs. Supply (PSR), G=100	PSR	130	140		dB	VS = ±2.3 V to ±18 V, G = 100	3
Offset RTI vs. Supply (PSR), G=1000	PSR	140	150		dB	VS = ±2.3 V to ±18 V, G = 1000	3
Input Bias Current	IB		0.2	0.4	nA		3
Input Bias Current over temperature	IB			1	nA	T = -40°C to +85°C	3
Input Bias Current average TC	IB TC		1		pA/°C	Average TC	3
Input Offset Current	IOS		0.1	0.4	nA		3
Input Offset Current over temperature	IOS			0.6	nA	T = -40°C to +85°C	3
Input Offset Current average TC	IOS TC		1		pA/°C	Average TC	3
Reference Input Current	IIN		50	60	µA	VIN+, VIN-, VREF = 0	3
Reference Input Resistance	RIN		20		kΩ		3
Reference Gain to Output			1		V/V	1 ± 0.0001	3
Power Supply Operating Range	VS	-18		18	V	Printed ±2.3 to ±18 V; min magnitude 2.3	4
Quiescent Current	IQ		0.9	1	mA		4
Quiescent Current over temperature	IQ		1	1.2	mA	T = -40°C to +85°C	4
Slew Rate, G=1	SR	1.5	2		V/µs	G = 1	4
Slew Rate, G=5 to 100	SR	2	2.5		V/µs	G = 5 to 100	4
Gain Range	G	1		1000	V/V	G = 1 + (49.4 kΩ/RG)	4
Gain Error, G=1				0.02	%	VOUT ± 10 V, G = 1	4
Gain Error, G=10				0.15	%	VOUT ± 10 V, G = 10	4
Gain Error, G=100				0.15	%	VOUT ± 10 V, G = 100	4
Gain Error, G=1000				0.15	%	VOUT ± 10 V, G = 1000	4
Gain Nonlinearity, G=1 to 10			3	10	ppm	VOUT = -10 V to +10 V, RL = 10 kΩ	4
Gain Nonlinearity, G=100			5	15	ppm	VOUT = -10 V to +10 V, RL = 10 kΩ	4
Gain Nonlinearity, G=1000			10	40	ppm	VOUT = -10 V to +10 V, RL = 10 kΩ	4
Gain Nonlinearity, G=1 to 100, RL=2k			10	95	ppm	VOUT = -10 V to +10 V, RL = 2 kΩ	4
Gain vs. Temperature, G=1			2	5	ppm/°C	G = 1	4
Gain vs. Temperature, G>1				-50	ppm/°C	G > 1	4
Short-Circuit Current	ISC		18		mA		4
Specified Performance Temperature Range		-40		85	°C		5
Operating Temperature Range		-40		125	°C		5
Supply Voltage				18	V	Printed ±18 V	8
Internal Power Dissipation				200	mW		8
Storage Temperature Range		-65		150	°C		8
Operating Temperature Range (abs max)		-40		125	°C		8
Thermal Resistance, 8-Lead SOIC	θJA		121		°C/W	4-Layer JEDEC board, free air	8
Input Voltage Noise	eNI		8		nV/√Hz	1 kHz, VIN+, VIN-, VREF = 0	3
Output Voltage Noise	eNO		75		nV/√Hz	1 kHz	3
Small Signal -3 dB Bandwidth, G=1			825		kHz	G = 1	4

CAD (KiCad official)

Symbol: AD8221BRZ
Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
3D model: SOIC-8 (KiCad packages3D, STEP)
3D model files: ad8221brz-etched.step / ad8221brz-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ad8221brz.step / ad8221brz.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Analog Devices datasheet (24 pp, sha256 1717c8a938166715, retrieved 2026-10-31, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

AD8221BRZ

Verified AD8221BRZ

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3D Model

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