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AD8137YRZ

Analog Devices · Differential Amplifiers · SOIC-8

AD8137YRZ from Analog Devices, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 -IN input Inverting input of the differential amplifier.
2 VOCM input An internal feedback loop drives the output common-mode voltage to equal the voltage applied to this pin, provided the amplifier remains linear (input range -4 V to +4 V at VS = ±5 V).
3 VS+ power_in Positive power supply voltage (supply range 2.7 V to 12 V, 12 V absolute maximum).
4 +OUT output Positive side of the differential output.
5 -OUT output Negative side of the differential output.
6 VS- power_in Negative power supply voltage.
7 PD input Power-down pin; reduces supply current to 450 µA at 5 V in power-down mode.
8 +IN input Noninverting input of the differential amplifier.

Key specifications

Parameter Value
Manufacturer Analog Devices
Package SOIC-8
Category Amplifiers/Comparators
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Input Offset Voltage VOS -2.6 2.6 mV VS = ±5 V, VIP = VIN = VOCM = 0 V 3
Input Offset Voltage VOS -2.7 2.7 mV VS = 5 V, VIP = VIN = VOCM = 0 V 5
Input Offset Voltage VOS -2.75 2.75 mV VS = 3 V, VIP = VIN = VOCM = 0 V 7
Quiescent Current IQ 3.2 3.6 mA VS = ±5 V 4
Quiescent Current IQ 2.6 2.8 mA VS = 5 V 6
Quiescent Current IQ 2.3 2.5 mA VS = 3 V 8
Quiescent Current, Disabled IQ 750 900 µA VS = ±5 V, Power-down = low 4
Quiescent Current, Disabled IQ 450 600 µA VS = 5 V, Power-down = low 6
Quiescent Current, Disabled IQ 345 460 µA VS = 3 V, Power-down = low 8
Input Offset Current 0.1 0.45 µA VS = ±5 V 3
Input Offset Current 0.1 0.45 µA VS = 5 V 5
Input Offset Current 0.1 0.4 µA VS = 3 V 7
Input Bias Current 0.5 1 µA VS = ±5 V, TMIN to TMAX 3
Input Bias Current 0.5 0.9 µA VS = 5 V, TMIN to TMAX 5
Input Bias Current 0.5 0.9 µA VS = 3 V, TMIN to TMAX 7
-3 dB Small Signal Bandwidth 64 76 MHz VS = ±5 V, VO, dm = 0.1 V p-p 3
-3 dB Small Signal Bandwidth 63 75 MHz VS = 5 V, VO, dm = 0.1 V p-p 5
-3 dB Small Signal Bandwidth 61 73 MHz VS = 3 V, VO, dm = 0.1 V p-p 7
-3 dB Large Signal Bandwidth 79 110 MHz VS = ±5 V, VO, dm = 2 V p-p 3
-3 dB Large Signal Bandwidth 76 107 MHz VS = 5 V, VO, dm = 2 V p-p 5
-3 dB Large Signal Bandwidth 62 93 MHz VS = 3 V, VO, dm = 2 V p-p 7
Input Common-Mode Voltage Range -4 4 V VS = ±5 V 3
Input Common-Mode Voltage Range 1 4 V VS = 5 V 5
Input Common-Mode Voltage Range 1 2 V VS = 3 V 7
CMRR CMRR 66 79 dB VS = ±5 V, ΔVICM = ±1 V 3
CMRR CMRR 64 90 dB VS = 5 V, ΔVICM = ±1 V 5
CMRR CMRR 64 80 dB VS = 3 V, ΔVICM = ±1 V 7
VOCM Gain 0.992 1 1.008 V/V VS = ±5 V 3
VOCM Gain 0.98 1 1.02 V/V VS = 5 V 5
VOCM Gain 0.96 1 1.04 V/V VS = 3 V 7
VOCM Input Voltage Range -4 4 V VS = ±5 V 3
VOCM Input Voltage Range 1 4 V VS = 5 V 5
VOCM Input Voltage Range 1 2 V VS = 3 V 7
VOCM Input Offset Voltage -28 28 mV VS = ±5 V 3
VOCM Input Offset Voltage -25 25 mV VS = 5 V 5
VOCM Input Offset Voltage -25 25 mV VS = 3 V 7
VOCM Input Bias Current 0.3 1.1 µA VS = ±5 V 4
VOCM Input Bias Current 0.25 0.9 µA VS = 5 V 6
VOCM Input Bias Current 0.3 0.7 µA VS = 3 V 7
VOCM CMRR CMRR 62 75 dB VS = ±5 V, ΔVO, dm/ΔVOCM, ΔVOCM = ±0.5 V 4
VOCM CMRR CMRR 62 75 dB VS = 5 V, ΔVO, dm/ΔVOCM, ΔVOCM = ±0.5 V 6
VOCM CMRR CMRR 62 74 dB VS = 3 V, ΔVO, dm/ΔVOCM, ΔVOCM = ±0.5 V 8
Power Supply Operating Range 2.7 6 V Printed as +2.7 to ±6 V 4
PSRR PSRR 79 91 dB VS = ±5 V, ΔVS = ±1 V 4
PSRR PSRR 79 91 dB VS = 5 V, ΔVS = ±1 V 6
PSRR PSRR 78 90 dB VS = 3 V, ΔVS = ±1 V 8
Operating Temperature Range -40 125 °C 4
Supply Voltage 12 V 9
Storage Temperature Range -65 125 °C 9
Lead Temperature (Soldering, 10 sec) 300 °C 9
Junction Temperature 150 °C 9
Thermal Resistance θJA θJA 157 °C/W 8-Lead SOIC/2-Layer 9
Thermal Resistance θJA θJA 125 °C/W 8-Lead SOIC/4-Layer 9
Thermal Resistance θJC θJC 56 °C/W 8-Lead SOIC 9
Input Offset Voltage Drift 3 µV/°C TMIN to TMAX 3

CAD (KiCad official)

  • Symbol: AD8137YRZ
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: ad8137yrz-etched.step / ad8137yrz-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ad8137yrz.step / ad8137yrz.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Analog Devices datasheet (32 pp, sha256 42d1cf42aadb72c8, retrieved 2026-10-30, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF