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AD-MMBTA06

Public Made by Adom

by adom

Changjing Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AD-MMBTA06

Changjing · Bipolar (BJT) · SOT-23

AD-MMBTA06 from Changjing, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base of the NPN transistor; emitter-base breakdown voltage VEBO is 4 V minimum and the DC current gain hFE is 100 to 400 at VCE = 1V, IC = 10mA.
2 EMITTER passive Emitter of the NPN transistor; connected to the lower-potential side, with collector continuous current IC rated at 500 mA.
3 COLLECTOR passive Collector of the NPN transistor; collector-emitter voltage VCEO is rated at 80 V and collector-base voltage VCBO at 80 V.

Key specifications

Parameter Value
Manufacturer Changjing
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO 80 V IC = 100µA, IE = 0A 2
Collector-emitter breakdown voltage V(BR)CEO 80 V IC = 1mA, IB = 0A 2
Emitter-base breakdown voltage V(BR)EBO 4 V IE = 100µA, IC = 0A 2
Collector-emitter cut-off current ICEO 0.1 µA VCE = 60V, IB = 0A 2
Collector-base cut-off current ICBO 1 µA VCB = 80V, IE = 0A 2
Emitter-base cut-off current IEBO 0.1 µA VEB = 3V, IC = 0A 2
DC current gain hFE(1) 100 400 - VCE = 1V, IC = 10mA 2
DC current gain hFE(2) 100 - VCE = 1V, IC = 100mA 2
Collector-emitter saturation voltage VCE(sat) 0.25 V IC = 100mA, IB = 10mA 2
Base-emitter saturation voltage VBE(sat) 1.2 V IC = 100mA, IB = 10mA 2
Transition frequency fT 100 MHz VCE = 2V, IC = 10mA, f = 100MHz 2
Collector-base voltage VCBO 80 V 2
Collector-emitter voltage VCEO 80 V 2
Emitter-base voltage VEBO 4 V 2
Collector continuous current IC 500 mA Note 1: Maximum allowed temperature Tj = 25°C 2
Collector power dissipation PC 300 mW Note 1: Maximum allowed temperature Tj = 25°C 2
Thermal resistance from junction to ambient RθJA 416 °C/W Note 2: device mounted on 1 inch2 FR-4 board with 1oz copper, still air, Ta = 25℃ 2
Operating junction and storage temperature range Tj, Tstg -55 150 °C 2

CAD (KiCad official)

  • Symbol: AD-MMBTA06
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: ad-mmbta06-etched.step / ad-mmbta06-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ad-mmbta06.step / ad-mmbta06.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (6 pp, sha256 d7a7e00dc161faaa, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF