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AD-MMBT5401-H

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Changjing Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AD-MMBT5401-H

Changjing · Bipolar (BJT) · SOT-23

AD-MMBT5401-H from Changjing, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base of the PNP transistor; VEBO is limited to -5 V and IEBO is at most -100 nA at VEB = -4 V.
2 EMITTER passive Emitter of the PNP transistor; the emitter-base breakdown voltage V(BR)EBO is at least -5 V at IE = -10 µA.
3 COLLECTOR passive Collector of the PNP transistor; VCBO is -160 V, VCEO is -150 V and continuous collector current IC is -0.6 A.

Key specifications

Parameter Value
Manufacturer Changjing
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage VCBO -160 V 2
Collector-emitter voltage VCEO -150 V 2
Emitter-base voltage VEBO -5 V 2
Collector continuous current IC -0.6 A Tj = 25°C maximum allowed (note 1) 2
Collector power dissipation PC 0.3 W Tj = 25°C maximum allowed (note 1) 2
Thermal resistance from junction to ambient RθJA 416 °C/W Mounted on 1 inch² FR-4 board, 1oz copper, still air, Ta = 25°C (note 2) 2
Operating junction and storage temperature range Tj, Tstg -55 150 °C 2
Collector-base breakdown voltage V(BR)CBO -160 V IC = -100µA, IE = 0A 2
Collector-emitter breakdown voltage V(BR)CEO -150 V IC = -1mA, IB = 0A; pulse test (note 3) 2
Emitter-base breakdown voltage V(BR)EBO -5 V IE = -10µA, IC = 0A 2
Collector-emitter cut-off current ICEX -100 nA VCE = -120V, IE = 0A 2
Emitter-base cut-off current IEBO -100 nA VEB = -4V, IC = 0A 2
DC current gain hFE(1) hFE(1) 80 VCE = -5V, IC = -1mA; pulse test (note 3) 2
DC current gain hFE(2) hFE(2) 100 300 VCE = -5V, IC = -10mA; pulse test (note 3) 2
DC current gain hFE(2), rank H (AD-MMBT5401-H) hFE(2) 200 300 VCE = -5V, IC = -10mA; rank H per classification table 2
DC current gain hFE(3) hFE(3) 50 VCE = -5V, IC = -50mA; pulse test (note 3) 2
Collector-emitter saturation voltage VCE(sat)1 VCE(sat)1 -0.2 V IC = -10mA, IB = -1mA; pulse test (note 3) 2
Collector-emitter saturation voltage VCE(sat)2 VCE(sat)2 -0.5 V IC = -50mA, IB = -5mA; pulse test (note 3) 2
Base-emitter saturation voltage VBE(sat)1 VBE(sat)1 -1 V IC = -10mA, IB = -1mA; pulse test (note 3) 2
Base-emitter saturation voltage VBE(sat)2 VBE(sat)2 -1 V IC = -50mA, IB = -5mA; pulse test (note 3) 2
Transition frequency fT 100 MHz VCE = -5V, IC = -10mA, f = 30MHz 2

CAD (KiCad official)

  • Symbol: AD-MMBT5401-H
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: ad-mmbt5401-h-etched.step / ad-mmbt5401-h-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ad-mmbt5401-h.step / ad-mmbt5401-h.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (6 pp, sha256 02777178859cd2a8, retrieved 2026-10-28, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF