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AD-MMBT3906

Public Made by Adom

by adom

Changjing Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AD-MMBT3906

Changjing · Bipolar (BJT) · SOT-23

AD-MMBT3906 from Changjing, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base of the PNP transistor; the datasheet gives VEBO of -5 V and IEBO of -100 nA max at VEB = -5 V.
2 EMITTER passive Emitter of the PNP transistor; the emitter-base breakdown voltage V(BR)EBO is -5 V min at IE = -10 µA.
3 COLLECTOR passive Collector of the PNP transistor; VCEO is -40 V, VCBO is -40 V and continuous collector current IC is -200 mA.

Key specifications

Parameter Value
Manufacturer Changjing
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage VCBO -40 V 2
Collector-emitter voltage VCEO -40 V 2
Emitter-base voltage VEBO -5 V 2
Collector continuous current IC -200 mA Note 1: maximum allowed temperature Tj = 25°C 2
Collector power dissipation PC 200 mW Note 1: maximum allowed temperature Tj = 25°C 2
Thermal resistance from junction to ambient RθJA 625 °C/W Note 2: 1 inch² FR-4 board, 1oz copper, still air, Ta = 25°C 2
Operating junction and storage temperature range Tj, Tstg -55 150 °C 2
Collector-base breakdown voltage V(BR)CBO -40 V IC = -10µA, IE = 0A 2
Collector-emitter breakdown voltage V(BR)CEO -40 V IC = -1mA, IB = 0A 2
Emitter-base breakdown voltage V(BR)EBO -5 V IE = -10µA, IC = 0A 2
Collector-emitter cut-off current ICEX -50 nA VCE = -30V, VBE(off) = -3V 2
Collector-base cut-off current ICBO -100 nA VCB = -40V, IE = 0A 2
Emitter-base cut-off current IEBO -100 nA VEB = -5V, IC = 0A 2
DC current gain hFE(1) hFE(1) 100 300 VCE = -1V, IC = -10mA 2
DC current gain hFE(2) hFE(2) 60 VCE = -1V, IC = -50mA 2
DC current gain hFE(3) hFE(3) 30 VCE = -2V, IC = -100mA 2
Collector-emitter saturation voltage VCE(sat) -0.3 V IC = -50mA, IB = -5mA 2
Base-emitter saturation voltage VBE(sat) -0.95 V IC = -50mA, IB = -5mA 2
Transition frequency fT 300 MHz VCE = -20V, IC = -10mA, f = 100MHz 2
Delay time td 35 ns VCC = -3V, VBE = -0.5V, IC = -10mA, IB1 = IB2 = -1mA 2
Rise time tr 35 ns VCC = -3V, VBE = -0.5V, IC = -10mA, IB1 = IB2 = -1mA 2
Storage time ts 225 ns VCC = -3V, IC = -10mA, IB1 = IB2 = -1mA 2
Fall time tf 75 ns VCC = -3V, IC = -10mA, IB1 = IB2 = -1mA 2

CAD (KiCad official)

  • Symbol: AD-MMBT3906
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: ad-mmbt3906-etched.step / ad-mmbt3906-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ad-mmbt3906.step / ad-mmbt3906.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (6 pp, sha256 8b100cb43991936e, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF