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AD-FMMT591

Public Made by Adom

by adom

Changjing Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AD-FMMT591

Changjing · Bipolar (BJT) · SOT-23

AD-FMMT591 from Changjing, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base of the PNP transistor; hFE is specified at VCE = -5V, and VEBO is limited to -5 V.
2 EMITTER passive Emitter of the PNP transistor; emitter-base voltage is limited to -5 V.
3 COLLECTOR passive Collector of the PNP transistor; VCEO -60 V, VCBO -80 V, continuous current -1 A (peak -2 A).

Key specifications

Parameter Value
Manufacturer Changjing
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO -80 V IC = -100µA, IE = 0A 2
Collector-emitter breakdown voltage V(BR)CEO -60 V IC = -10mA, IB = 0A; pulsed, pulse width 300µs, duty cycle ≤2% 2
Emitter-base breakdown voltage V(BR)EBO -5 V IE = -100µA, IC = 0A 2
Collector cut-off current ICBO -0.1 μA VCB = -60V, IE = 0A 2
Emitter-base cut-off current IEBO -0.1 μA VEB = -4V, IC = 0A 2
DC current gain hFE(1) hFE(1) 100 VCE = -5V, IC = -1mA; pulsed, pulse width 300µs, duty cycle ≤2% 2
DC current gain hFE(2) hFE(2) 100 300 VCE = -5V, IC = -500mA; pulsed, pulse width 300µs, duty cycle ≤2% 2
DC current gain hFE(3) hFE(3) 80 VCE = -5V, IC = -1A; pulsed, pulse width 300µs, duty cycle ≤2% 2
DC current gain hFE(4) hFE(4) 15 VCE = -5V, IC = -2A; pulsed, pulse width 300µs, duty cycle ≤2% 2
Collector-emitter saturation voltage VCE(sat)1 -300 mV IC = -500mA, IB = -50mA; pulsed, pulse width 300µs, duty cycle ≤2% 2
Collector-emitter saturation voltage VCE(sat)2 -600 mV IC = -1A, IB = -100mA; pulsed, pulse width 300µs, duty cycle ≤2% 2
Base-emitter saturation voltage VBE(sat) -1.2 V IC = -1A, IB = -100mA; pulsed, pulse width 300µs, duty cycle ≤2% 2
Base-emitter voltage VBE(on) -1 V VCE = -5V, IC = -1A; pulsed, pulse width 300µs, duty cycle ≤2% 2
Transition frequency fT 150 MHz VCE = -10V, IC = -50mA, f = 100MHz 2
Collector output capacitance Cob 10 pF VCB = -10V, f = 1MHz 2
Collector-base voltage VCBO -80 V 2
Collector-emitter voltage VCEO -60 V 2
Emitter-base voltage VEBO -5 V 2
Collector continuous current IC -1 A 2
Peak pulse current ICM -2 A 2
Collector power dissipation PC 250 mW 2
Operating junction and storage temperature range Tj, Tstg -55 150 °C 2
Thermal resistance from junction to ambient RθJA 500 °C/W 2

CAD (KiCad official)

  • Symbol: AD-FMMT591
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: ad-fmmt591-etched.step / ad-fmmt591-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ad-fmmt591.step / ad-fmmt591.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (6 pp, sha256 2e9256477dc94dc7, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF