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AD-BCP55-16

Public Made by Adom

by adom

Changjing Bipolar (BJT), SOT-223. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AD-BCP55-16

Changjing · Bipolar (BJT) · SOT-223

AD-BCP55-16 from Changjing, in a SOT-223. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base of the NPN transistor; continuous base current is limited to 100 mA (200 mA peak) and VEBO is 5 V max.
2 COLLECTOR passive Collector of the NPN transistor; for AD-BCP55 VCBO is 60 V, VCEO is 60 V, and continuous collector current is 1 A (2 A peak).
3 EMITTER passive Emitter of the NPN transistor; VEBO is 5 V max.

Key specifications

Parameter Value
Manufacturer Changjing
Package SOT-223
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter breakdown voltage (AD-BCP55) V(BR)CEO 60 V IC = 10mA, IB = 0A 2
Collector-base breakdown voltage (AD-BCP55) V(BR)CBO 60 V IC = 0.1mA, IE = 0A 2
Base-emitter breakdown voltage V(BR)EBO 5 V IE = 10µA, IC = 0A 2
Collector-base cut-off current ICBO 100 nA VCB = 30V, IE = 0A 2
DC current gain hFE(1) hFE(1) 25 VCE = 2V, IC = 5mA 2
DC current gain hFE(2) (rank -16) hFE(2) 100 250 VCE = 2V, IC = 150mA 2
DC current gain hFE(3) hFE(3) 25 VCE = 2V, IC = 500mA 2
Collector-emitter saturation voltage VCE(sat) 0.5 V IC = 500mA, IB = 50mA 2
Base-emitter voltage VBE 1 V IC = 500mA, VCE = 2V 2
Transition frequency fT 100 MHz VCE = 10V, IC = 50mA, f = 100MHz 2
Collector-base voltage (AD-BCP55) VCBO 60 V 2
Collector-emitter voltage (AD-BCP55) VCEO 60 V 2
Emitter-base voltage VEBO 5 V 2
Collector continuous current IC 1 A Footnote 1: maximum allowed at Ta = 25°C 2
Peak pulsed collector current ICM 2 A 2
Base continuous current IB 100 mA 2
Peak pulsed base current IBM 200 mA 2
Collector power dissipation PC1 1.5 W Footnote 1: maximum allowed at Ta = 25°C 2
Collector power dissipation at TL ≤ 120°C PC2 2 W TL ≤ 120°C 2
Thermal resistance from junction to ambient RθJA 83.3 °C/W Footnote 2: device on 1 inch² FR-4 board, 1oz copper, still air, Ta = 25°C 2
Thermal resistance from junction to lead RθJL 15 °C/W 2
Operating junction and storage temperature range Tj, Tstg -55 150 °C 2

CAD (KiCad official)

  • Symbol: AD-BCP55-16
  • Footprint: Package_TO_SOT_SMD:SOT-223-3_TabPin2
  • 3D model: SOT-223 (KiCad packages3D, STEP)
  • 3D model files: ad-bcp55-16-etched.step / ad-bcp55-16-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ad-bcp55-16.step / ad-bcp55-16.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (7 pp, sha256 9857c4d40590165f, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF