component
AD-BC856S
Public Made by Adomby adom
Changjing Bipolar (BJT), SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 15d ago |
| viewers | 15d ago |
| ad-bc856s-etched.glb | 15d ago |
| ad-bc856s-etched.step | 15d ago |
| ad-bc856s-hero.glb | 15d ago |
| ad-bc856s-hero.overlay.json | 15d ago |
| ad-bc856s.glb | 15d ago |
| ad-bc856s.kicad_mod | 15d ago |
| ad-bc856s.kicad_sym | 15d ago |
| ad-bc856s.lbr | 15d ago |
| ad-bc856s.step | 15d ago |
| package.json | 15d ago |
| page.json | 15d ago |
| README.md | 15d ago |
AD-BC856S
Changjing · Bipolar (BJT) · SOT-363
AD-BC856S from Changjing, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E1 | passive | Emitter of transistor 1 (PNP); VEBO rating is -5 V. |
| 2 | B1 | passive | Base of transistor 1 (PNP); IC max is -0.1 A. |
| 3 | C2 | passive | Collector of transistor 2 (PNP); VCEO is -65 V and VCBO is -80 V. |
| 4 | E2 | passive | Emitter of transistor 2 (PNP); VEBO rating is -5 V. |
| 5 | B2 | passive | Base of transistor 2 (PNP); IC max is -0.1 A. |
| 6 | C1 | passive | Collector of transistor 1 (PNP); VCEO is -65 V and VCBO is -80 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO | -80 | V | 2 | |||
| Collector-emitter voltage | VCEO | -65 | V | 2 | |||
| Emitter-base voltage | VEBO | -5 | V | 2 | |||
| Collector continuous current | IC | -0.1 | A | 2 | |||
| Collector power dissipation | PC | 0.2 | mW | 2 | |||
| Operating junction and storage temperature range | Tj, Tstg | -55 | 150 | °C | 2 | ||
| Thermal resistance from junction to ambient | RθJA | 625 | °C/W | 2 | |||
| Collector-base breakdown voltage | V(BR)CBO | -80 | V | IC = -10µA, IE = 0A | 2 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | -65 | V | IC = -10mA, IB = 0A | 2 | ||
| Emitter-base breakdown voltage | V(BR)EBO | -5 | V | IE = -10µA, IC = 0A | 2 | ||
| Collector cut-off current | ICBO | -15 | nA | VCB = -30V, IE = 0A | 2 | ||
| Emitter cut-off current | IEBO | -100 | nA | VEB = -5V, IE = 0A | 2 | ||
| DC current gain | hFE | 110 | VCE = -5V, IC = -2mA | 2 | |||
| Collector-emitter saturation voltage | VCE(sat) | -0.1 | V | IC = -10mA, IB = -0.5mA | 2 | ||
| Collector-emitter saturation voltage | VCE(sat) | -0.3 | V | IC = -100mA, IB = -5mA; pulse test PW≤350µs, δ≤2% | 2 | ||
| Transition frequency | fT | 100 | MHz | VCE = -5V, IC = -10mA, f = 100MHz | 2 | ||
| Collector output capacitance | Cobo | 2.5 | pF | VCB = -10V, IE = 0A, f = 1MHz | 2 |
CAD (KiCad official)
- Symbol:
AD-BC856S - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files:
ad-bc856s-etched.step/ad-bc856s-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ad-bc856s.step/ad-bc856s.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (6 pp, sha256
d9834d10a5a841ab, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).