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AD-BC846W-B

Changjing · Bipolar (BJT) · SOT-323

AD-BC846W-B from Changjing, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base of the NPN transistor; VEBO max is 6 V for AD-BC846W and IC continuous max is 0.1 A.
2 EMITTER passive Emitter of the NPN transistor; connected to the lowest potential in a common-emitter switching or AF amplifier stage.
3 COLLECTOR passive Collector of the NPN transistor; VCEO max is 65 V and VCBO max is 80 V for AD-BC846W, with 150 mW power dissipation.

Key specifications

Parameter Value
Manufacturer Changjing
Package SOT-323
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage (AD-BC846W) VCBO 80 V 1
Collector-emitter voltage (AD-BC846W) VCEO 65 V 1
Emitter-base voltage (AD-BC846W) VEBO 6 V 1
Collector continuous current IC 0.1 A Maximum allowed temperature Tj = 25°C (note 1) 1
Collector power dissipation PC 150 mW Maximum allowed temperature Tj = 25°C (note 1) 1
Thermal resistance from junction to ambient RθJA 833 °C/W Mounted on 1 inch² FR-4 board with 1oz copper, still air, Ta = 25°C (note 2) 1
Operating junction and storage temperature range Tj, Tstg -55 150 °C 1
Collector-base breakdown voltage (AD-BC846W) VCBO 80 V IC = 10µA, IE = 0A 2
Collector-emitter breakdown voltage (AD-BC846W) VCEO 65 V IC = 10mA, IB = 0A 2
Emitter-base breakdown voltage (AD-BC846W) VEBO 6 V IE = 1µA, IC = 0A 2
Collector cutoff current ICBO 15 nA VCB = 30V 2
DC current gain (grade B) hFE2 200 450 VCE = 5V, IC = 2mA 2
Collector-emitter saturation voltage VCE(sat) 0.25 V IC = 10mA, IB = 0.5mA 2
Collector-emitter saturation voltage VCE(sat) 0.6 V IC = 100mA, IB = 5mA 2
Base-emitter voltage VBE(on) 580 660 700 mV VCE = 5V, IC = 2mA 2
Base-emitter voltage VBE(on) 770 mV IC = 100mA, IB = 5mA 2
Transition frequency fT 100 MHz VCE = 5V, IC = 2mA, f = 100MHz 2
Collector output capacitance Cob 4.5 pF VCB = 5V, f = 1MHz 2
Noise figure (grade B) NF 10 dB VCE = 5V, IC = 0.2mA, f = 1KHz, RS = 2KΩ, BW = 200Hz 2

CAD (KiCad official)

  • Symbol: AD-BC846W-B
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: ad-bc846w-b-etched.step / ad-bc846w-b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ad-bc846w-b.step / ad-bc846w-b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (6 pp, sha256 d24249718cc1bb1c, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF