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AD-2N7002KW

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Changjing MOSFETs, SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AD-2N7002KW

Changjing · MOSFETs · SOT-323

AD-2N7002KW from Changjing, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate, voltage-controlled input with ESD-protection Zener to source; VGS max ±20 V, threshold 1 V min to 2.5 V max at ID = 1 mA.
2 S passive Source terminal of the N-channel MOSFET; continuous drain current 340 mA.
3 D passive Drain terminal of the N-channel MOSFET; VDS max 60 V, continuous ID 340 mA, pulsed IDM 800 mA.

Key specifications

Parameter Value
Manufacturer Changjing
Package SOT-323
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 60 V Tj = 25°C 2
Gate-source voltage VGS -20 20 V Tj = 25°C 2
Continuous drain current ID 340 mA Tj = 25°C 2
Pulsed drain current IDM 800 mA Tj = 25°C; pulse width limited by junction temperature 2
Maximum power dissipation PD 0.2 W Tj = 25°C 2
Operating junction and storage temperature range Tj, Tstg -55 150 °C 2
Thermal resistance from junction to ambient RθJA 625 °C/W 2
Drain-source breakdown voltage V(BR)DSS 60 V VGS = 0V, ID = 250µA 2
Gate threshold voltage VGS(th) 1 1.3 2.5 V VDS = VGS, ID = 1mA 2
Zero gate voltage drain current IDSS 1 µA VDS = 48V, VGS = 0V 2
Gate-body leakage current IGSS -10 10 µA VGS = ±20V, VDS = 0V 2
Drain-source on-state resistance RDS(on) 0.9 2.5 Ω VGS = 10V, ID = 500mA 2
Drain-source on-state resistance RDS(on) 1.1 3 Ω VGS = 4.5V, ID = 200mA 2
Input capacitance Ciss 40 pF VDS = 10V, VGS = 0V, f = 1MHz 2
Output capacitance Coss 30 pF VDS = 10V, VGS = 0V, f = 1MHz 2
Reverse transfer capacitance Crss 10 pF VDS = 10V, VGS = 0V, f = 1MHz 2
Turn-on delay time td(on) 10 ns VGS = 10V, VDS = 50V, RG = 50Ω, RGS = 50Ω, RL = 250Ω 2
Turn-off delay time td(off) 15 ns VGS = 10V, VDS = 50V, RG = 50Ω, RGS = 50Ω, RL = 250Ω 2
Gate-source breakdown voltage BVGSO 21.5 30 V IGS = ±1mA (open drain); printed ±21.5 to ±30 2
Drain forward voltage VSD 1.5 V IS = 300mA, VGS = 0V 2
Continuous Diode Forward Current IS 0.2 A 2
Pulsed Diode Forward Current ISM 0.53 A 2
Reverse recovery time trr 30 ns VGS = 0V, IS = 300mA, VR = 25V, dIS/dt = -100A/µs 2
Recovered charge Qr 30 nC VGS = 0V, IS = 300mA, VR = 25V, dIS/dt = -100A/µs 2

CAD (KiCad official)

  • Symbol: AD-2N7002KW
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: ad-2n7002kw-etched.step / ad-2n7002kw-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ad-2n7002kw.step / ad-2n7002kw.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (6 pp, sha256 4770ee37c0bb3dc1, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF