main
Ray Set visibility: public 2187368 5d ago
{
  "schema_version": 1,
  "type": "component",
  "slug": "act108-600e",
  "title": "ACT108-600E",
  "brief": "WeEn Semiconductors TRIACs, TO-92. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
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  "component": {
    "mpn": "ACT108-600E",
    "manufacturer": "WeEn Semiconductors",
    "package": "TO-92",
    "pin_count": 3,
    "category": "Transistors",
    "subcategory": "TRIACs",
    "datasheet": "https://datasheet.lcsc.com/datasheet/pdf/6a091d521ee08ca8c98c05954ee1efa9.pdf",
    "parts": {
      "symbol": "act108-600e.kicad_sym",
      "footprint": "act108-600e.kicad_mod",
      "model_3d": "act108-600e-hero.glb",
      "model_3d_plain": "act108-600e-etched.glb",
      "model_3d_step": "act108-600e-etched.step",
      "model_3d_step_plain": "act108-600e.step",
      "lbr": "act108-600e.lbr"
    },
    "distributor_links": {
      "lcsc": "C256390"
    },
    "distributor_check": {
      "checked_at": "2026-10-29T01:14:50Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": null,
        "status": "no match"
      },
      "mouser": {
        "pn": null,
        "status": "no match"
      }
    },
    "pins": [
      {
        "number": "1",
        "name": "CM",
        "type": "passive",
        "description": "Common terminal (CM), listed in the pinning table as 'common' with no electrical limits given for this pin in the datasheet."
      },
      {
        "number": "2",
        "name": "G",
        "type": "input",
        "description": "Gate terminal (G), listed in the pinning table as 'gate'; the datasheet specifies gate ratings only at device level (e.g. IGM 1 A, VGM 15 V, PG(AV) 0.1 W) and gives no pin-specific limits."
      },
      {
        "number": "3",
        "name": "LD",
        "type": "passive",
        "description": "Load terminal (LD), listed in the pinning table as 'load'; the datasheet gives no pin-specific electrical limits for this terminal."
      }
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    "provenance": {
      "extractor": "extract_pins 0.3",
      "factory_chain": {
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        "primary_model": "claude-haiku-5-5",
        "primary_mode": "text",
        "consensus_model": "claude-sonnet-5-5",
        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: The pinning table (Table 2, page 3) gives only the pin number, symbol and a one-word description for; The package outline drawing (Fig. 13, page 10) and the simplified outline image on page 3 are graphi"
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        "cost_usd": 0.0435,
        "at": "2026-10-29T01:14:42"
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        "pages": 13,
        "sha256": "e08585708f598b18",
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      "pins": {
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        "described": 3,
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        "refuses_to_fabricate": true
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        "seat": "body on z = 0, through-hole leads below",
        "extents_mm": [
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        "zmin_mm": -2.5,
        "centre_offset_mm": 0.542,
        "footprint_binding": "identity",
        "sha256": "f0b61c32ecbf0067157adc5a3d4966ceadf5d6dafe93c51af35f76c41c71a54a",
        "checked": "2026-10-29",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
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        "sha256": "b3ad0d2dcff37fb2c4658e976d3edc7de2db009587b0d938c40c612af9ffd82a",
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  "metadata": {
    "specs": {
      "Manufacturer": "WeEn Semiconductors",
      "Package": "TO-92",
      "Category": "Transistors",
      "Pins": "3"
    },
    "characteristics": {
      "version": 1,
      "source": "datasheet",
      "datasheet_sha256": "e08585708f598b180859a4829ccc02a93a93e2b058933f0b9a9b00ce3e17a34d",
      "rows": [
        {
          "name": "Repetitive peak off-state voltage",
          "symbol": "VDRM",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": null,
          "typ": null,
          "max": 600,
          "conditions": "",
          "source_page": 4,
          "source": "datasheet"
        },
        {
          "name": "RMS on-state current",
          "symbol": "IT(RMS)",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 0.8,
          "conditions": "full sine wave; Tlead ≤ 71 °C; Fig. 1",
          "source_page": 4,
          "source": "datasheet"
        },
        {
          "name": "Non-repetitive peak on-state current",
          "symbol": "ITSM",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 13,
          "conditions": "full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig. 2; Fig. 3",
          "source_page": 4,
          "source": "datasheet"
        },
        {
          "name": "Non-repetitive peak on-state current",
          "symbol": "ITSM",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 14.3,
          "conditions": "full sine wave; Tj(init) = 25 °C; tp = 16.7 ms",
          "source_page": 4,
          "source": "datasheet"
        },
        {
          "name": "I2t for fusing",
          "symbol": "I2t",
          "kind": "absolute_maximum",
          "unit": "A²s",
          "min": null,
          "typ": null,
          "max": 0.32,
          "conditions": "tp = 10 ms; SIN",
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          "source": "datasheet"
        },
        {
          "name": "Rate of rise of on-state current",
          "symbol": "dIT/dt",
          "kind": "absolute_maximum",
          "unit": "A/µs",
          "min": null,
          "typ": null,
          "max": 100,
          "conditions": "IG = 20 mA",
          "source_page": 4,
          "source": "datasheet"
        },
        {
          "name": "Peak gate current",
          "symbol": "IGM",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 1,
          "conditions": "t = 20 μs",
          "source_page": 4,
          "source": "datasheet"
        },
        {
          "name": "Peak gate voltage",
          "symbol": "VGM",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": null,
          "typ": null,
          "max": 15,
          "conditions": "positive applied gate voltage",
          "source_page": 4,
          "source": "datasheet"
        },
        {
          "name": "Average gate power",
          "symbol": "PG(AV)",
          "kind": "absolute_maximum",
          "unit": "W",
          "min": null,
          "typ": null,
          "max": 0.1,
          "conditions": "over any 20 ms period",
          "source_page": 4,
          "source": "datasheet"
        },
        {
          "name": "Storage temperature",
          "symbol": "Tstg",
          "kind": "absolute_maximum",
          "unit": "°C",
          "min": -40,
          "typ": null,
          "max": 150,
          "conditions": "",
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        },
        {
          "name": "Junction temperature",
          "symbol": "Tj",
          "kind": "absolute_maximum",
          "unit": "°C",
          "min": null,
          "typ": null,
          "max": 125,
          "conditions": "",
          "source_page": 4,
          "source": "datasheet"
        },
        {
          "name": "Peak pulse voltage",
          "symbol": "VPP",
          "kind": "absolute_maximum",
          "unit": "kV",
          "min": null,
          "typ": null,
          "max": 2.5,
          "conditions": "Tj = 25 °C; non-repetitive, off-state; ten pulses on each voltage polarity; 20s or more between successive pulses; Fig. 4",
          "source_page": 4,
          "source": "datasheet"
        },
        {
          "name": "Thermal resistance from junction to lead",
          "symbol": "Rth(j-lead)",
          "kind": "thermal",
          "unit": "K/W",
          "min": null,
          "typ": null,
          "max": 60,
          "conditions": "full cycle with heatsink compound; Fig. 5",
          "source_page": 6,
          "source": "datasheet"
        },
        {
          "name": "Gate trigger current (LD+ G-)",
          "symbol": "IGT",
          "kind": "electrical",
          "unit": "mA",
          "min": 1,
          "typ": null,
          "max": 10,
          "conditions": "VD = 12 V; IT = 100 mA; LD+ G-; Tj = 25 °C; Fig. 6",
          "source_page": 7,
          "source": "datasheet"
        },
        {
          "name": "Gate trigger current (LD- G-)",
          "symbol": "IGT",
          "kind": "electrical",
          "unit": "mA",
          "min": 1,
          "typ": null,
          "max": 10,
          "conditions": "VD = 12 V; IT = 100 mA; LD- G-; Tj = 25 °C; Fig. 6",
          "source_page": 7,
          "source": "datasheet"
        },
        {
          "name": "Latching current (LD+ G-)",
          "symbol": "IL",
          "kind": "electrical",
          "unit": "mA",
          "min": null,
          "typ": null,
          "max": 25,
          "conditions": "VD = 12 V; IG = 100 mA; LD+ G-; Tj = 25 °C; Fig. 7",
          "source_page": 7,
          "source": "datasheet"
        },
        {
          "name": "Latching current (LD- G-)",
          "symbol": "IL",
          "kind": "electrical",
          "unit": "mA",
          "min": null,
          "typ": null,
          "max": 20,
          "conditions": "VD = 12 V; IG = 100 mA; LD- G-; Tj = 25 °C; Fig. 7",
          "source_page": 7,
          "source": "datasheet"
        },
        {
          "name": "Holding current",
          "symbol": "IH",
          "kind": "electrical",
          "unit": "mA",
          "min": null,
          "typ": null,
          "max": 20,
          "conditions": "VD = 12 V; Tj = 25 °C; Fig. 7",
          "source_page": 7,
          "source": "datasheet"
        },
        {
          "name": "On-state voltage",
          "symbol": "VT",
          "kind": "electrical",
          "unit": "V",
          "min": null,
          "typ": null,
          "max": 1.3,
          "conditions": "IT = 1.1 A; Tj = 25 °C; Fig. 8",
          "source_page": 7,
          "source": "datasheet"
        },
        {
          "name": "Gate trigger voltage",
          "symbol": "VGT",
          "kind": "electrical",
          "unit": "V",
          "min": 0.15,
          "typ": null,
          "max": null,
          "conditions": "VD = 400 V; IT = 100 mA; Tj = 125 °C",
          "source_page": 7,
          "source": "datasheet"
        },
        {
          "name": "Gate trigger voltage",
          "symbol": "VGT",
          "kind": "electrical",
          "unit": "V",
          "min": null,
          "typ": null,
          "max": 1,
          "conditions": "VD = 12 V; IT = 100 mA; Tj = 25 °C",
          "source_page": 7,
          "source": "datasheet"
        },
        {
          "name": "Off-state current",
          "symbol": "ID",
          "kind": "electrical",
          "unit": "µA",
          "min": null,
          "typ": null,
          "max": 2,
          "conditions": "VD = 600 V; Tj = 25 °C",
          "source_page": 7,
          "source": "datasheet"
        },
        {
          "name": "Off-state current",
          "symbol": "ID",
          "kind": "electrical",
          "unit": "mA",
          "min": null,
          "typ": null,
          "max": 0.2,
          "conditions": "VD = 600 V; Tj = 125 °C",
          "source_page": 7,
          "source": "datasheet"
        },
        {
          "name": "Clamping voltage",
          "symbol": "VCL",
          "kind": "electrical",
          "unit": "V",
          "min": 650,
          "typ": null,
          "max": null,
          "conditions": "ICL = 0.1 mA; tp = 1 ms; Tj = 25 °C; Fig. 9",
          "source_page": 7,
          "source": "datasheet"
        },
        {
          "name": "Rate of rise of off-state voltage",
          "symbol": "dVD/dt",
          "kind": "electrical",
          "unit": "V/µs",
          "min": 2000,
          "typ": null,
          "max": null,
          "conditions": "VDM = 402 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit; Fig. 10",
          "source_page": 7,
          "source": "datasheet"
        },
        {
          "name": "Rate of change of commutating current",
          "symbol": "dIcom/dt",
          "kind": "electrical",
          "unit": "A/ms",
          "min": 0.5,
          "typ": null,
          "max": null,
          "conditions": "VD = 400 V; Tj = 125 °C; IT(RMS) = 0.8 A; dVcom/dt = 20 V/µs; (snubberless condition); gate open circuit; Fig. 11; Fig. 12",
          "source_page": 7,
          "source": "datasheet"
        },
        {
          "name": "Thermal resistance from junction to ambient (free air)",
          "symbol": "Rth(j-a)",
          "kind": "thermal",
          "unit": "K/W",
          "min": null,
          "typ": 150,
          "max": null,
          "conditions": "full cycle; printed-circuit board mounted; lead length 4 mm",
          "source_page": 6,
          "source": "datasheet"
        }
      ]
    }
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  "discovery_triggers": [
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  "discovery_pitch": "ACT108-600E (WeEn Semiconductors) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
  },
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