component
ACST830-8T
Public Made by Adomby adom
STMicroelectronics Thyristors (SCR)/Modules, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
Ray
acst830-8t: specified limits as data (metadata.characteristics, 29 rows from the datasheet)
775cf0e
16d ago
ACST830-8T
STMicroelectronics · Thyristors (SCR)/Modules · TO-220AB
ACST830-8T from STMicroelectronics, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | COM | passive | Common terminal (triac main terminal referenced as COM); dV/dt, IH and (dI/dt)c are specified for both polarities of OUT referenced to COM. |
| 2 | OUT | passive | Output terminal of the triac switch, also connected to the metal tab; 8 A rms on-state current, 800 V VDRM/VRRM, with 850 V minimum clamping voltage. |
| 3 | G | input | Gate trigger input with IGT max 30 mA and VGT max 1.0 V (VOUT = 12 V, RL = 33 Ω), peak gate current 1.6 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| On-state rms current (full sine wave) | IT(RMS) | 8 | A | TO-220AB, D2PAK Tc = 105 °C | 2 | ||
| Non repetitive surge peak on-state current | ITSM | 80 | A | Tj initial = 25 °C, f = 50 Hz, tp = 20 ms, full cycle sine wave | 2 | ||
| Non repetitive surge peak on-state current | ITSM | 84 | A | Tj initial = 25 °C, f = 60 Hz, tp = 16.7 ms, full cycle sine wave | 2 | ||
| I2t for fuse selection | I2t | 42 | A2s | tp = 10 ms | 2 | ||
| Critical rate of rise on-state current | dI/dt | 100 | A/μs | IG = 2 x IGT, tr ≤ 100 ns, f = 120 Hz, Tj = 125 °C | 2 | ||
| Non repetitive line peak pulse voltage | VPP | 2 | kV | Tj = 25 °C | 2 | ||
| Average gate power dissipation | PG(AV) | 0.1 | W | Tj = 125 °C | 2 | ||
| Peak gate power dissipation | PGM | 10 | W | tp = 20 ms, Tj = 125 °C | 2 | ||
| Peak gate current | IGM | 1.6 | A | tp = 20 ms, Tj = 125 °C | 2 | ||
| Storage temperature range | Tstg | -40 | 150 | °C | 2 | ||
| Operating junction temperature range | Tj | -40 | 125 | °C | 2 | ||
| Lead temperature for soldering | TL | 260 | °C | 10 s, at 3 mm from plastic case | 2 | ||
| Gate trigger current | IGT | 30 | mA | VOUT = 12 V, RL = 33 Ω, quadrants I - II - III | 2 | ||
| Gate trigger voltage | VGT | 1 | V | 2 | |||
| Gate non-trigger voltage | VGD | 0.2 | V | VOUT = VDRM, RL = 3.3 kΩ, Tj = 125 °C, quadrants I - II - III | 2 | ||
| Holding current | IH | 30 | mA | IOUT = 500 mA | 2 | ||
| Latching current | IL | 50 | mA | IG = 1.2 x IGT, quadrants I - II - III | 2 | ||
| Critical rate of rise of off-state voltage | dV/dt | 2000 | V/µs | VOUT = 67% VDRM, gate open, Tj = 125 °C | 2 | ||
| Critical rate of decrease of main current | (dI/dt)c | 8 | A/ms | Without snubber, Tj = 125 °C | 2 | ||
| Clamping voltage | VCL | 850 | V | ICL = 0.1 mA, tp = 1 ms | 2 | ||
| On-state voltage | VTM | 1.5 | V | IOUT = 11.3 A, tp = 500 µs, Tj = 25 °C | 3 | ||
| Threshold voltage | VT0 | 0.9 | V | Tj = 125 °C | 3 | ||
| Dynamic resistance | RD | 50 | mΩ | Tj = 125 °C | 3 | ||
| Repetitive peak off-state current | IDRM | 20 | µA | VOUT = VDRM/VRRM, Tj = 25 °C | 3 | ||
| Repetitive peak off-state current | IDRM | 1 | mA | VOUT = VDRM/VRRM, Tj = 125 °C | 3 | ||
| Repetitive peak reverse current | IRRM | 20 | µA | VOUT = VDRM/VRRM, Tj = 25 °C | 3 | ||
| Repetitive peak reverse current | IRRM | 1 | mA | VOUT = VDRM/VRRM, Tj = 125 °C | 3 | ||
| Junction to ambient thermal resistance | Rth(j-a) | 60 | °C/W | TO-220AB | 3 | ||
| Junction to case thermal resistance (AC) | Rth(j-c) | 2 | °C/W | TO-220AB | 3 |
CAD (KiCad official)
- Symbol:
ACST830-8T - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
acst830-8t-etched.step/acst830-8t-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);acst830-8t.step/acst830-8t.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (17 pp, sha256
fab0af0f7f89fd6d, retrieved 2026-10-11, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# ACST830-8T
**STMicroelectronics** · Thyristors (SCR)/Modules · TO-220AB
ACST830-8T from STMicroelectronics, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | COM | passive | Common terminal (triac main terminal referenced as COM); dV/dt, IH and (dI/dt)c are specified for both polarities of OUT referenced to COM. |
| 2 | OUT | passive | Output terminal of the triac switch, also connected to the metal tab; 8 A rms on-state current, 800 V VDRM/VRRM, with 850 V minimum clamping voltage. |
| 3 | G | input | Gate trigger input with IGT max 30 mA and VGT max 1.0 V (VOUT = 12 V, RL = 33 Ω), peak gate current 1.6 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| On-state rms current (full sine wave) | IT(RMS) | | | 8 | A | TO-220AB, D2PAK Tc = 105 °C | 2 |
| Non repetitive surge peak on-state current | ITSM | | | 80 | A | Tj initial = 25 °C, f = 50 Hz, tp = 20 ms, full cycle sine wave | 2 |
| Non repetitive surge peak on-state current | ITSM | | | 84 | A | Tj initial = 25 °C, f = 60 Hz, tp = 16.7 ms, full cycle sine wave | 2 |
| I2t for fuse selection | I2t | | | 42 | A2s | tp = 10 ms | 2 |
| Critical rate of rise on-state current | dI/dt | | | 100 | A/μs | IG = 2 x IGT, tr ≤ 100 ns, f = 120 Hz, Tj = 125 °C | 2 |
| Non repetitive line peak pulse voltage | VPP | | | 2 | kV | Tj = 25 °C | 2 |
| Average gate power dissipation | PG(AV) | | | 0.1 | W | Tj = 125 °C | 2 |
| Peak gate power dissipation | PGM | | | 10 | W | tp = 20 ms, Tj = 125 °C | 2 |
| Peak gate current | IGM | | | 1.6 | A | tp = 20 ms, Tj = 125 °C | 2 |
| Storage temperature range | Tstg | -40 | | 150 | °C | | 2 |
| Operating junction temperature range | Tj | -40 | | 125 | °C | | 2 |
| Lead temperature for soldering | TL | | | 260 | °C | 10 s, at 3 mm from plastic case | 2 |
| Gate trigger current | IGT | | | 30 | mA | VOUT = 12 V, RL = 33 Ω, quadrants I - II - III | 2 |
| Gate trigger voltage | VGT | | | 1 | V | | 2 |
| Gate non-trigger voltage | VGD | 0.2 | | | V | VOUT = VDRM, RL = 3.3 kΩ, Tj = 125 °C, quadrants I - II - III | 2 |
| Holding current | IH | | | 30 | mA | IOUT = 500 mA | 2 |
| Latching current | IL | | | 50 | mA | IG = 1.2 x IGT, quadrants I - II - III | 2 |
| Critical rate of rise of off-state voltage | dV/dt | 2000 | | | V/µs | VOUT = 67% VDRM, gate open, Tj = 125 °C | 2 |
| Critical rate of decrease of main current | (dI/dt)c | 8 | | | A/ms | Without snubber, Tj = 125 °C | 2 |
| Clamping voltage | VCL | 850 | | | V | ICL = 0.1 mA, tp = 1 ms | 2 |
| On-state voltage | VTM | | | 1.5 | V | IOUT = 11.3 A, tp = 500 µs, Tj = 25 °C | 3 |
| Threshold voltage | VT0 | | | 0.9 | V | Tj = 125 °C | 3 |
| Dynamic resistance | RD | | | 50 | mΩ | Tj = 125 °C | 3 |
| Repetitive peak off-state current | IDRM | | | 20 | µA | VOUT = VDRM/VRRM, Tj = 25 °C | 3 |
| Repetitive peak off-state current | IDRM | | | 1 | mA | VOUT = VDRM/VRRM, Tj = 125 °C | 3 |
| Repetitive peak reverse current | IRRM | | | 20 | µA | VOUT = VDRM/VRRM, Tj = 25 °C | 3 |
| Repetitive peak reverse current | IRRM | | | 1 | mA | VOUT = VDRM/VRRM, Tj = 125 °C | 3 |
| Junction to ambient thermal resistance | Rth(j-a) | | | 60 | °C/W | TO-220AB | 3 |
| Junction to case thermal resistance (AC) | Rth(j-c) | | | 2 | °C/W | TO-220AB | 3 |
## CAD (KiCad official)
- Symbol: `ACST830-8T`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files: `acst830-8t-etched.step` / `acst830-8t-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `acst830-8t.step` / `acst830-8t.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [STMicroelectronics datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590904934898884608) (17 pp, sha256 `fab0af0f7f89fd6d`, retrieved 2026-10-11, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/acst830-8t-datasheet.pdf)