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ACS120-7ST
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STMicroelectronics Thyristors (SCR)/Modules, TO-220AB. Pinout reviewed by a person against the datasheet, KiCad symbol/footprint/3D.
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ACS120-7ST
STMicroelectronics · Thyristors (SCR)/Modules · TO-220AB
ACS120-7ST from STMicroelectronics, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | COM | passive | Common drive reference; connects to AC mains; electrically shared with mounting tab; rated VDRM/VRRM ±700 V, IT(RMS) = 2 A at TC = 119 °C, Rth(j-c) = 2.6 °C/W. |
| 2 | OUT | passive | Switched AC output; connects to load; VTM max 1.3 V at IOUT = 2.8 A (tp = 380 µs, TJ = 25 °C); ITSM = 20 A (tp = 20 ms); static dV/dt min 500 V/µs at TJ = 110 °C. |
| 3 | G | input | Gate input; triggered by negative current flowing out of pin via external resistor from MCU; IGT max 10 mA, VGT max 1 V (VOUT = 12 V DC, RL = 140 Ω, TJ = 25 °C); IGM peak 1 A (tp = 20 µs); PG(AV) max 0.1 W. |
| Tab | COM | passive | Mounting tab; electrically connected to COM (pin 1); primary thermal path to heatsink; Rth(j-c) = 2.6 °C/W for TO-220AB. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive peak off-state voltage | VDRM/VRRM | 700 | V | 2 | |||
| On-state RMS current (TO-220AB) | IT(RMS) | 2 | A | full cycle sine wave 50 to 60 Hz, TO-220AB TC = 119 °C | 2 | ||
| Non repetitive surge peak on-state current | ITSM | 20 | A | TJ initial = 25 °C, full cycle sine wave, tP = 20 ms | 2 | ||
| Non repetitive surge peak on-state current | ITSM | 21 | A | TJ initial = 25 °C, full cycle sine wave, tP = 16.7 ms | 2 | ||
| Fusing capability | I2t | 2.6 | A2s | tP = 10 ms | 2 | ||
| Repetitive critical rate of rise of on-state current | dI/dt | 50 | A/µs | IG = 10 mA (tr < 100 ns), Tj = 125 °C, f = 120 Hz | 2 | ||
| Non repetitive line peak pulse voltage | VPP | 2 | kV | According to IEC 61000-4-5 (Figure 17) | 2 | ||
| Storage temperature range | Tstg | -40 | 150 | °C | 2 | ||
| Operating junction temperature range | TJ | -30 | 125 | °C | 2 | ||
| Maximum lead soldering temperature | TL | 260 | °C | during 10 s | 2 | ||
| Average gate power dissipation | PG(AV) | 0.1 | W | 2 | |||
| Peak gate current | IGM | 1 | A | tP = 20 µs | 2 | ||
| Peak positive gate voltage (in respect to pin COM) | VGM | 5 | V | 2 | |||
| Thermal resistance junction to ambient (TO-220AB) | Rth(j-a) | 60 | °C/W | S = 0.5 cm2 copper surface under tab | 2 | ||
| Thermal resistance junction to case (TO-220AB) | Rth(j-c) | 2.6 | °C/W | 2 | |||
| Triggering gate current | IGT | 10 | mA | VOUT = 12 V (DC), RL = 140 Ω, QII-QIII, TJ = 25 °C | 3 | ||
| Triggering gate voltage | VGT | 1 | V | VOUT = 12 V (DC), RL = 140 Ω, QII-QIII, TJ = 25 °C | 3 | ||
| Non-triggering gate voltage | VGD | 0.15 | V | VOUT = VDRM, RL = 3.3 kΩ, TJ = 125 °C | 3 | ||
| Holding current | IH | 45 | mA | IOUT = 100 mA, gate open, TJ = 25 °C | 3 | ||
| Latching current | IL | 65 | mA | IG = 20 mA, TJ = 25 °C | 3 | ||
| Peak on-state voltage drop | VTM | 1.3 | V | IOUT = 2.8 A, tp = 380 µs, TJ = 25 °C | 3 | ||
| On-state threshold voltage | VTO | 0.85 | V | TJ = 125 °C | 3 | ||
| On-state dynamic resistance | Rd | 200 | mΩ | TJ = 125 °C | 3 | ||
| Maximum forward or reverse leakage current | IDRM /IRRM | 2 | µA | VOUT = 700 V, TJ = 25 °C | 3 | ||
| Maximum forward or reverse leakage current | IDRM /IRRM | 200 | µA | VOUT = 700 V, TJ = 125 °C | 3 | ||
| Critical rate of rise of off-state voltage | dV/dt | 500 | V/µs | VOUT = 460 V, gate open, TJ = 110 °C | 3 | ||
| Critical rate of decrease of commutating on-state current | (dI/dt)c | 1 | A/ms | (dV/dt)c = 20 V/µs, TJ = 125 °C | 3 | ||
| Clamping voltage | VCL | 1100 | V | ICL = 1 mA, tp = 1 ms, TJ = 25 °C | 3 |
CAD (KiCad official)
- Symbol:
ACS120-7ST - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
acs120-7st-etched.step/acs120-7st-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);acs120-7st.step/acs120-7st.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (17 pp, sha256
e12d832a3bfd5588, retrieved 2026-10-21, tier: lcsc) - Extractor:
ds2sf(Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# ACS120-7ST
**STMicroelectronics** · Thyristors (SCR)/Modules · TO-220AB
ACS120-7ST from STMicroelectronics, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | COM | passive | Common drive reference; connects to AC mains; electrically shared with mounting tab; rated VDRM/VRRM ±700 V, IT(RMS) = 2 A at TC = 119 °C, Rth(j-c) = 2.6 °C/W. |
| 2 | OUT | passive | Switched AC output; connects to load; VTM max 1.3 V at IOUT = 2.8 A (tp = 380 µs, TJ = 25 °C); ITSM = 20 A (tp = 20 ms); static dV/dt min 500 V/µs at TJ = 110 °C. |
| 3 | G | input | Gate input; triggered by negative current flowing out of pin via external resistor from MCU; IGT max 10 mA, VGT max 1 V (VOUT = 12 V DC, RL = 140 Ω, TJ = 25 °C); IGM peak 1 A (tp = 20 µs); PG(AV) max 0.1 W. |
| Tab | COM | passive | Mounting tab; electrically connected to COM (pin 1); primary thermal path to heatsink; Rth(j-c) = 2.6 °C/W for TO-220AB. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive peak off-state voltage | VDRM/VRRM | | | 700 | V | | 2 |
| On-state RMS current (TO-220AB) | IT(RMS) | | | 2 | A | full cycle sine wave 50 to 60 Hz, TO-220AB TC = 119 °C | 2 |
| Non repetitive surge peak on-state current | ITSM | | | 20 | A | TJ initial = 25 °C, full cycle sine wave, tP = 20 ms | 2 |
| Non repetitive surge peak on-state current | ITSM | | | 21 | A | TJ initial = 25 °C, full cycle sine wave, tP = 16.7 ms | 2 |
| Fusing capability | I2t | | | 2.6 | A2s | tP = 10 ms | 2 |
| Repetitive critical rate of rise of on-state current | dI/dt | | | 50 | A/µs | IG = 10 mA (tr < 100 ns), Tj = 125 °C, f = 120 Hz | 2 |
| Non repetitive line peak pulse voltage | VPP | | | 2 | kV | According to IEC 61000-4-5 (Figure 17) | 2 |
| Storage temperature range | Tstg | -40 | | 150 | °C | | 2 |
| Operating junction temperature range | TJ | -30 | | 125 | °C | | 2 |
| Maximum lead soldering temperature | TL | | | 260 | °C | during 10 s | 2 |
| Average gate power dissipation | PG(AV) | | | 0.1 | W | | 2 |
| Peak gate current | IGM | | | 1 | A | tP = 20 µs | 2 |
| Peak positive gate voltage (in respect to pin COM) | VGM | | | 5 | V | | 2 |
| Thermal resistance junction to ambient (TO-220AB) | Rth(j-a) | | | 60 | °C/W | S = 0.5 cm2 copper surface under tab | 2 |
| Thermal resistance junction to case (TO-220AB) | Rth(j-c) | | | 2.6 | °C/W | | 2 |
| Triggering gate current | IGT | | | 10 | mA | VOUT = 12 V (DC), RL = 140 Ω, QII-QIII, TJ = 25 °C | 3 |
| Triggering gate voltage | VGT | | | 1 | V | VOUT = 12 V (DC), RL = 140 Ω, QII-QIII, TJ = 25 °C | 3 |
| Non-triggering gate voltage | VGD | 0.15 | | | V | VOUT = VDRM, RL = 3.3 kΩ, TJ = 125 °C | 3 |
| Holding current | IH | | | 45 | mA | IOUT = 100 mA, gate open, TJ = 25 °C | 3 |
| Latching current | IL | | | 65 | mA | IG = 20 mA, TJ = 25 °C | 3 |
| Peak on-state voltage drop | VTM | | | 1.3 | V | IOUT = 2.8 A, tp = 380 µs, TJ = 25 °C | 3 |
| On-state threshold voltage | VTO | | | 0.85 | V | TJ = 125 °C | 3 |
| On-state dynamic resistance | Rd | | | 200 | mΩ | TJ = 125 °C | 3 |
| Maximum forward or reverse leakage current | IDRM /IRRM | | | 2 | µA | VOUT = 700 V, TJ = 25 °C | 3 |
| Maximum forward or reverse leakage current | IDRM /IRRM | | | 200 | µA | VOUT = 700 V, TJ = 125 °C | 3 |
| Critical rate of rise of off-state voltage | dV/dt | 500 | | | V/µs | VOUT = 460 V, gate open, TJ = 110 °C | 3 |
| Critical rate of decrease of commutating on-state current | (dI/dt)c | 1 | | | A/ms | (dV/dt)c = 20 V/µs, TJ = 125 °C | 3 |
| Clamping voltage | VCL | | 1100 | | V | ICL = 1 mA, tp = 1 ms, TJ = 25 °C | 3 |
## CAD (KiCad official)
- Symbol: `ACS120-7ST`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files: `acs120-7st-etched.step` / `acs120-7st-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `acs120-7st.step` / `acs120-7st.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [STMicroelectronics datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590327923271241729) (17 pp, sha256 `e12d832a3bfd5588`, retrieved 2026-10-21, tier: lcsc)
- **Extractor:** `ds2sf` (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/acs120-7st-datasheet.pdf)