component
AC857BQ-7
Public Made by Adomby adom
Diodes Incorporated Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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AC857BQ-7
Diodes Incorporated · Bipolar (BJT) · SOT-23
AC857BQ-7 from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | passive | Base terminal of the PNP transistor; peak base current is limited to IBM = -200 mA. |
| 2 | E | passive | Emitter terminal; peak emitter current is limited to IEM = -200 mA and emitter-base voltage to VEBO = -5.0 V. |
| 3 | C | passive | Collector terminal; collector-emitter voltage is limited to VCEO = -45 V, continuous collector current to IC = -100 mA and peak collector current to ICM = -200 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | BVCBO | -50 | V | IC = -10µA | 4 | ||
| Collector-Emitter Breakdown Voltage | BVCEO | -45 | V | IC = -10mA | 4 | ||
| Emitter-Base Breakdown Voltage | BVEBO | -5 | V | IE = -1µA | 4 | ||
| Collector Cutoff Current | ICBO | -15 | nA | VCB = -30V | 4 | ||
| Collector Cutoff Current | ICBO | -4 | µA | VCB = -30V, TJ = +150°C | 4 | ||
| Collector Emitter Cutoff Current | ICES | -15 | nA | VCE = -50V | 4 | ||
| Emitter-Base Cutoff Current | IEBO | -100 | nA | VEB = -5V | 4 | ||
| DC Current Gain (AC857BQ) | hFE | 220 | 290 | 475 | IC = -2.0mA, VCE = -5V | 4 | |
| Collector-Emitter Saturation Voltage | VCE(SAT) | -75 | -300 | mV | IC = - 10mA, IB = -0.5mA | 4 | |
| Collector-Emitter Saturation Voltage | VCE(SAT) | -250 | -650 | mV | IC = - 100mA, IB = -5.0mA | 4 | |
| Base-Emitter Turn-On Voltage | VBE(ON) | -600 | -650 | -750 | mV | IC = -2mA, VCE = -5V | 4 |
| Base-Emitter Turn-On Voltage | VBE(ON) | -820 | mV | IC = -10mA, VCE = -5V | 4 | ||
| Base-Emitter Saturation Voltage | VBE(SAT) | -850 | -1100 | mV | IC = -100mA, IB = -5mA | 4 | |
| Transition Frequency | fT | 100 | 200 | MHz | VCE = -5V, IC = -10mA, f = 100MHz | 4 | |
| Noise Figure | NF | 2 | 10 | dB | VCE = -5V, IC = -200µA, RS = 2kΩ, f = 1kHz, Δf = 200Hz | 4 | |
| Collector-Base Voltage | VCBO | -50 | V | TA = +25°C | 2 | ||
| Collector-Emitter Voltage | VCEO | -45 | V | TA = +25°C | 2 | ||
| Emitter-Base Voltage | VEBO | -5 | V | TA = +25°C | 2 | ||
| Continuous Collector Current | IC | -100 | mA | TA = +25°C | 2 | ||
| Peak Collector Current | ICM | -200 | mA | TA = +25°C | 2 | ||
| Peak Emitter Current | IEM | -200 | mA | TA = +25°C | 2 | ||
| Peak Base Current | IBM | -200 | mA | TA = +25°C | 2 | ||
| Operating and Storage Temperature Range | TJ,TSTG | -65 | 150 | °C | 2 | ||
| Power Dissipation | PD | 310 | mW | Note 6: minimum recommended pad layout, 1oz copper, single-sided FR-4, still air | 2 | ||
| Power Dissipation | PD | 350 | mW | Note 7: 15mm x 15mm 1oz copper | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 403 | °C/W | Note 6: minimum recommended pad layout, 1oz copper | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 357 | °C/W | Note 7: 15mm x 15mm 1oz copper | 2 | ||
| Thermal Resistance, Junction to Leads | RθJL | 350 | °C/W | Note 8: junction to solder-point at end of leads | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | tin | Terminals: Finish, Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 | 1 |
CAD (KiCad official)
- Symbol:
AC857BQ-7 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
ac857bq-7-etched.step/ac857bq-7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ac857bq-7.step/ac857bq-7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (7 pp, sha256
a5a7b46226fc89a5, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AC857BQ-7
**Diodes Incorporated** · Bipolar (BJT) · SOT-23
AC857BQ-7 from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | passive | Base terminal of the PNP transistor; peak base current is limited to IBM = -200 mA. |
| 2 | E | passive | Emitter terminal; peak emitter current is limited to IEM = -200 mA and emitter-base voltage to VEBO = -5.0 V. |
| 3 | C | passive | Collector terminal; collector-emitter voltage is limited to VCEO = -45 V, continuous collector current to IC = -100 mA and peak collector current to ICM = -200 mA. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | BVCBO | -50 | | | V | IC = -10µA | 4 |
| Collector-Emitter Breakdown Voltage | BVCEO | -45 | | | V | IC = -10mA | 4 |
| Emitter-Base Breakdown Voltage | BVEBO | -5 | | | V | IE = -1µA | 4 |
| Collector Cutoff Current | ICBO | | | -15 | nA | VCB = -30V | 4 |
| Collector Cutoff Current | ICBO | | | -4 | µA | VCB = -30V, TJ = +150°C | 4 |
| Collector Emitter Cutoff Current | ICES | | | -15 | nA | VCE = -50V | 4 |
| Emitter-Base Cutoff Current | IEBO | | | -100 | nA | VEB = -5V | 4 |
| DC Current Gain (AC857BQ) | hFE | 220 | 290 | 475 | | IC = -2.0mA, VCE = -5V | 4 |
| Collector-Emitter Saturation Voltage | VCE(SAT) | | -75 | -300 | mV | IC = - 10mA, IB = -0.5mA | 4 |
| Collector-Emitter Saturation Voltage | VCE(SAT) | | -250 | -650 | mV | IC = - 100mA, IB = -5.0mA | 4 |
| Base-Emitter Turn-On Voltage | VBE(ON) | -600 | -650 | -750 | mV | IC = -2mA, VCE = -5V | 4 |
| Base-Emitter Turn-On Voltage | VBE(ON) | | | -820 | mV | IC = -10mA, VCE = -5V | 4 |
| Base-Emitter Saturation Voltage | VBE(SAT) | | -850 | -1100 | mV | IC = -100mA, IB = -5mA | 4 |
| Transition Frequency | fT | 100 | 200 | | MHz | VCE = -5V, IC = -10mA, f = 100MHz | 4 |
| Noise Figure | NF | | 2 | 10 | dB | VCE = -5V, IC = -200µA, RS = 2kΩ, f = 1kHz, Δf = 200Hz | 4 |
| Collector-Base Voltage | VCBO | | | -50 | V | TA = +25°C | 2 |
| Collector-Emitter Voltage | VCEO | | | -45 | V | TA = +25°C | 2 |
| Emitter-Base Voltage | VEBO | | | -5 | V | TA = +25°C | 2 |
| Continuous Collector Current | IC | | | -100 | mA | TA = +25°C | 2 |
| Peak Collector Current | ICM | | | -200 | mA | TA = +25°C | 2 |
| Peak Emitter Current | IEM | | | -200 | mA | TA = +25°C | 2 |
| Peak Base Current | IBM | | | -200 | mA | TA = +25°C | 2 |
| Operating and Storage Temperature Range | TJ,TSTG | -65 | | 150 | °C | | 2 |
| Power Dissipation | PD | | | 310 | mW | Note 6: minimum recommended pad layout, 1oz copper, single-sided FR-4, still air | 2 |
| Power Dissipation | PD | | | 350 | mW | Note 7: 15mm x 15mm 1oz copper | 2 |
| Thermal Resistance, Junction to Ambient | RθJA | | | 403 | °C/W | Note 6: minimum recommended pad layout, 1oz copper | 2 |
| Thermal Resistance, Junction to Ambient | RθJA | | | 357 | °C/W | Note 7: 15mm x 15mm 1oz copper | 2 |
| Thermal Resistance, Junction to Leads | RθJL | | | 350 | °C/W | Note 8: junction to solder-point at end of leads | 2 |
## Materials and finish
As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | | tin | Terminals: Finish, Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 | 1 |
## CAD (KiCad official)
- Symbol: `AC857BQ-7`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `ac857bq-7-etched.step` / `ac857bq-7-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ac857bq-7.step` / `ac857bq-7.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Diodes Incorporated datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590233776753717248) (7 pp, sha256 `a5a7b46226fc89a5`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ac857bq-7-datasheet.pdf)