# AC857BQ-7-HXY

**HXY MOSFET** · Bipolar (BJT) · SOT-23

AC857BQ-7-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the PNP transistor; VEBO max -5 V, ICBO/IEBO max -0.1 µA, VBE(sat) max -1.1 V at IC=-100 mA, IB=-5 mA. |
| 2 | E | passive | Emitter of the PNP transistor; emitter-base voltage rated -5 V, and total power dissipation 200 mW. |
| 3 | C | passive | Collector of the PNP transistor; VCBO -50 V, VCEO -45 V, continuous collector current -0.1 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | VCBO | -50 |  |  | V | IC= -10μA, IE=0 | 1 |
| Collector-emitter breakdown voltage | VCEO | -45 |  |  | V | IC= -10mA, IB=0 | 1 |
| Emitter-base breakdown voltage | VEBO | -5 |  |  | V | IE= -1μA, IC=0 | 1 |
| Collector cut-off current | ICBO |  |  | -0.1 | μA | VCB= -45V, IE=0 | 1 |
| Emitter cut-off current | IEBO |  |  | -0.1 | μA | VEB= -5 V , IC=0 | 1 |
| DC current gain | hFE | 200 |  | 475 |  | VCE= -5V, IC= -2mA | 1 |
| Collector-emitter saturation voltage | VCE(sat) |  |  | -0.5 | V | IC=-100mA, IB= -5 mA | 1 |
| Base-emitter saturation voltage | VBE(sat) |  |  | -1.1 | V | IC= -100mA, IB= -5mA | 1 |
| Transition frequency | fT | 100 |  |  | MHz | VCE= -5 V, IC=-10mA, f=100MHz | 1 |
| Collector capacitance | Cob |  |  | 4.5 | pF | VCB= -10V, f=1MHz | 1 |
| Collector-base voltage | VCBO | -50 |  |  | V |  | 1 |
| Collector-emitter voltage | VCEO | -45 |  |  | V |  | 1 |
| Emitter-base voltage | VEBO | -5 |  |  | V |  | 1 |
| Collector current-continuous | IC | -0.1 |  |  | A |  | 1 |
| Collector power dissipation | PC |  |  | 200 | mW |  | 1 |
| Junction temperature | Tj |  |  | 150 | ℃ |  | 1 |
| Storage temperature | Tstg | -55 |  | 150 | ℃ |  | 1 |

## CAD (KiCad official)

- Symbol: `AC857BQ-7-HXY`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `ac857bq-7-hxy-etched.step` / `ac857bq-7-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ac857bq-7-hxy.step` / `ac857bq-7-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8604445162365988864) (5 pp, sha256 `c6735f9834fc52db`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ac857bq-7-hxy-datasheet.pdf)