component
A94-TA
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Changjiang Electronics Tech (CJ) Bipolar Transistors - BJT, TO-92. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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A94-TA
Changjiang Electronics Tech (CJ) · Bipolar Transistors - BJT · TO-92
A94-TA from Changjiang Electronics Tech (CJ), in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | EMITTER | passive | Emitter of the PNP transistor; emitter-base breakdown voltage V(BR)EBO is -5 V min and the absolute maximum VEBO is -5 V. |
| 2 | BASE | passive | Base of the PNP transistor; hFE(1) is 80 to 300 at VCE=-10V, IC=-10mA, and VBE(sat) is -0.75 V max at IC=-10mA, IB=-1mA. |
| 3 | COLLECTOR | passive | Collector of the PNP transistor; VCBO and VCEO are both -400 V, and the maximum collector current IC is -0.2 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjiang Electronics Tech (CJ) |
| Package | TO-92 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | -400 | V | IC=-100µA,IE=0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | -400 | V | IC=-1mA,IB=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | -5 | V | IE=-100µA,IC=0 | 1 | ||
| Collector cut-off current | ICBO | -0.1 | μA | VCB=-400V,IE=0 | 1 | ||
| Collector cut-off current | ICEO | -5 | μA | VCE=-400V,IB=0 | 1 | ||
| Emitter cut-off current | IEBO | -0.1 | μA | VEB=-4V,IC=0 | 1 | ||
| DC current gain | hFE(1) | 80 | 300 | VCE=-10V, IC=-10mA | 1 | ||
| DC current gain | hFE(2) | 70 | VCE=-10V, IC=-1mA | 1 | |||
| DC current gain | hFE(3) | 60 | VCE=-10V, IC=-100mA | 1 | |||
| DC current gain | hFE(4) | 80 | VCE=-10V, IC=-50mA | 1 | |||
| Collector-emitter saturation voltage | VCE(sat)(1) | -0.2 | V | IC=-10mA,IB=-1mA | 1 | ||
| Collector-emitter saturation voltage | VCE(sat)(2) | -0.3 | V | IC=-50mA,IB=-5mA | 1 | ||
| Base-emitter saturation voltage | VBE(sat) | -0.75 | V | IC=-10mA,IB=-1mA | 1 | ||
| Transition frequency | fT | 50 | MHz | VCE=-20V, IC=-10mA,f=30MHz | 1 | ||
| Collector-Base Voltage | VCBO | -400 | V | Ta=25℃ | 1 | ||
| Collector-Emitter Voltage | VCEO | -400 | V | Ta=25℃ | 1 | ||
| Emitter-Base Voltage | VEBO | -5 | V | Ta=25℃ | 1 | ||
| Collector Current | IC | -0.2 | A | Ta=25℃ | 1 | ||
| Collector Power Dissipation | PC | 625 | mW | Ta=25℃ | 1 | ||
| Junction Temperature | TJ | 150 | ℃ | 1 | |||
| Storage Temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance From Junction To ambient | RθJA | 200 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
A94-TA - Footprint:
Package_TO_SOT_THT:TO-92_Inline - 3D model: TO-92 (KiCad packages3D, STEP)
- 3D model files:
a94-ta-etched.step/a94-ta-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);a94-ta.step/a94-ta.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjiang Electronics Tech (CJ) datasheet (2 pp, sha256
0cd87a59cebb7c2a, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# A94-TA
**Changjiang Electronics Tech (CJ)** · Bipolar Transistors - BJT · TO-92
A94-TA from Changjiang Electronics Tech (CJ), in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | EMITTER | passive | Emitter of the PNP transistor; emitter-base breakdown voltage V(BR)EBO is -5 V min and the absolute maximum VEBO is -5 V. |
| 2 | BASE | passive | Base of the PNP transistor; hFE(1) is 80 to 300 at VCE=-10V, IC=-10mA, and VBE(sat) is -0.75 V max at IC=-10mA, IB=-1mA. |
| 3 | COLLECTOR | passive | Collector of the PNP transistor; VCBO and VCEO are both -400 V, and the maximum collector current IC is -0.2 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjiang Electronics Tech (CJ) |
| Package | TO-92 |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | | | -400 | V | IC=-100µA,IE=0 | 1 |
| Collector-emitter breakdown voltage | V(BR)CEO | | | -400 | V | IC=-1mA,IB=0 | 1 |
| Emitter-base breakdown voltage | V(BR)EBO | | | -5 | V | IE=-100µA,IC=0 | 1 |
| Collector cut-off current | ICBO | | | -0.1 | μA | VCB=-400V,IE=0 | 1 |
| Collector cut-off current | ICEO | | | -5 | μA | VCE=-400V,IB=0 | 1 |
| Emitter cut-off current | IEBO | | | -0.1 | μA | VEB=-4V,IC=0 | 1 |
| DC current gain | hFE(1) | 80 | | 300 | | VCE=-10V, IC=-10mA | 1 |
| DC current gain | hFE(2) | 70 | | | | VCE=-10V, IC=-1mA | 1 |
| DC current gain | hFE(3) | 60 | | | | VCE=-10V, IC=-100mA | 1 |
| DC current gain | hFE(4) | 80 | | | | VCE=-10V, IC=-50mA | 1 |
| Collector-emitter saturation voltage | VCE(sat)(1) | | | -0.2 | V | IC=-10mA,IB=-1mA | 1 |
| Collector-emitter saturation voltage | VCE(sat)(2) | | | -0.3 | V | IC=-50mA,IB=-5mA | 1 |
| Base-emitter saturation voltage | VBE(sat) | | | -0.75 | V | IC=-10mA,IB=-1mA | 1 |
| Transition frequency | fT | 50 | | | MHz | VCE=-20V, IC=-10mA,f=30MHz | 1 |
| Collector-Base Voltage | VCBO | | | -400 | V | Ta=25℃ | 1 |
| Collector-Emitter Voltage | VCEO | | | -400 | V | Ta=25℃ | 1 |
| Emitter-Base Voltage | VEBO | | | -5 | V | Ta=25℃ | 1 |
| Collector Current | IC | | | -0.2 | A | Ta=25℃ | 1 |
| Collector Power Dissipation | PC | | | 625 | mW | Ta=25℃ | 1 |
| Junction Temperature | TJ | | | 150 | ℃ | | 1 |
| Storage Temperature | Tstg | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance From Junction To ambient | RθJA | | 200 | | ℃/W | | 1 |
## CAD (KiCad official)
- Symbol: `A94-TA`
- Footprint: `Package_TO_SOT_THT:TO-92_Inline`
- 3D model: TO-92 (KiCad packages3D, STEP)
- 3D model files: `a94-ta-etched.step` / `a94-ta-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `a94-ta.step` / `a94-ta.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Changjiang Electronics Tech (CJ) datasheet](docs/a94-ta-datasheet.pdf) (2 pp, sha256 `0cd87a59cebb7c2a`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/a94-ta-datasheet.pdf)