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A8586KEJTR-T

Allegro MicroSystems, LLC · DC-DC Converters · DFN-10-EP(3x3)

A8586KEJTR-T from Allegro MicroSystems, LLC, in a DFN-10-EP(3x3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 SW power_out Source of the internal MOSFET; connect the output inductor (LO) and freewheel diode (D) cathode close to this pin with wide traces (pins 1 and 2 are both SW).
2 SW power_out Source of the internal MOSFET; connect the output inductor (LO) and freewheel diode (D) cathode close to this pin with wide traces (pins 1 and 2 are both SW).
3 EN input High-voltage enable input (rated 40 V); set high to turn the regulator on, low to turn it off, and it can be tied to VIN if no logic signal is available.
4 COMP passive Error amplifier output and compensation node for the current-mode control loop; connect a series RC network from this pin to GND.
5 FB input Feedback (negative) input to the error amplifier; connect a resistor divider from VOUT to this pin to program the output voltage (0.792 V typical reference).
6 GND power_in Ground connection.
7 FREQ passive Frequency setting pin; a resistor RFREQ from this pin to GND sets the PWM switching frequency (45 kΩ gives 2.0 MHz typical).
8 VIN power_in Power input for the control circuits and drain of the internal high-side N-channel MOSFET; connect to a 3.8 to 36 V supply with a ceramic capacitor placed very close to it (pins 8 and 9 are both VIN).
9 VIN power_in Power input for the control circuits and drain of the internal high-side N-channel MOSFET; connect to a 3.8 to 36 V supply with a ceramic capacitor placed very close to it (pins 8 and 9 are both VIN).
10 BST passive Bootstrap capacitor connection; connect a 100 nF capacitor from this pin to SW, and a series BOOT resistor is not recommended.
11 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Allegro MicroSystems, LLC
Package DFN-10-EP(3x3)
Category Power Management ICs
Pins 11

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Operating Input Voltage VIN 3.8 12 36 V VEN ≥ 2.5 V 5
VIN UVLO Start VIN(START) 2.6 3 3.4 V VIN rising 5
Supply Quiescent Current IQ 27 36 µA No load, VFB = 0.9 V, A8586 only, -40°C ≤ TJ ≤ 65°C 5
Sleep Quiescent Current IQ(SLEEP) 11 18 µA VEN = 0 V 5
Switching Frequency fSW 1.6 2 2.4 MHz RFSET = 45 kΩ 5
Minimum On-Time tON(MIN) 80 160 ns 5
MOSFET Leakage IFET(LKG) 0.1 1 µA VEN = 0 V, VIN = 12 V, VSW = 0 V, TJ = 25°C 5
Feedback Voltage VFB 0.786 0.792 0.803 V 4.5 V ≤ VIN ≤ 36 V, TJ = 25°C 5
Feedback Voltage VFB 0.773 0.812 V 4.5 V ≤ VIN ≤ 36 V, -40°C ≤ TJ ≤ 125°C 5
Error Amp Transconductance gm 35 60 95 µA/V ICOMP = ±3 µA 5
Current Limit ILIM 4 5.5 A 5
Slope Compensation SE(2MHz) 2.2 3.1 4 A/µs Measured at fSW = 2 MHz 5
EN Threshold Rising VEN(H) 1.2 1.5 1.85 V VEN rising 5
EN Threshold Falling VEN(L) 1 1.2 1.4 V VEN falling 5
VIN UVLO Hysteresis VIN(HYS) 0.4 V 5
Thermal Shutdown Threshold TTSD 170 °C TJ rising 5
Thermal Shutdown Hysteresis THYS 20 °C 5
Minimum Off-Time tOFF(MIN) 100 ns 5
MOSFET On Resistance RDS(on) 150 mΩ VBOOT-SW = 5 V 5
Error Amp Voltage Gain AVOL 1000 V/V 5
Error Amp Min. Source Current IEA(SOURCE) -5 µA VFB = 0.7 V 5
Error Amp Min. Sink Current IEA(SINK) 5 µA VFB = 0.9 V 5
Low IQ Peak Current Threshold IPEAK(LO_IQ) 800 mA 5
SS Ramp Time tSS 1.5 ms 0 V < VFB < 0.8 V 5
COMP to Current Sense Transductance GCS 9 A/V 5
EN Hysteresis VEN(HYS) 300 mV 5
Input Voltage (recommended) VIN 3.8 36 V 2
Junction Temperature (recommended) TJ -40 150 °C 2
Input Voltage VIN -0.3 40 V 2
Switch Node Voltage VSW -0.3 V upper limit VIN + 0.3 V 2
Switch Node Voltage transient VSW -1.5 V t < 250 ns 2
Bootstrap Pin to Switch Node VBST-SW -0.3 6 V 2
EN, FREQ pins -0.3 V upper limit VIN + 0.3 V 2
All other pins -0.3 6 V 2
Junction Temperature TJ -40 150 °C 2
Storage Temperature Range Tstg -40 150 °C 2
Junction-to-Ambient Thermal Resistance RθJA 45 °C/W DFN-10 (EJ) package on 4-layer PCB based on JEDEC standard 2

CAD (KiCad official)

  • Symbol: A8586KEJTR-T
  • Footprint: Package_DFN_QFN:DFN-10-1EP_3x3mm_P0.5mm_EP1.55x2.48mm
  • 3D model: DFN-10-EP(3x3) (KiCad packages3D, STEP)
  • 3D model files: a8586kejtr-t-etched.step / a8586kejtr-t-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); a8586kejtr-t.step / a8586kejtr-t.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Allegro MicroSystems, LLC datasheet (20 pp, sha256 fde98db0c4328c8c, retrieved 2026-10-30, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF