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A6986F5VTR

STMicroelectronics · DC-DC Converters · HTSSOP-16-EP

A6986F5VTR from STMicroelectronics, in a HTSSOP-16-EP. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 RST output The RST open collector output is driven low when the output voltage is out of regulation and is released after an adjustable DELAY time once the output voltage is over the active delay threshold.
2 VCC power_out Connect a ceramic capacitor (≥ 470 nF) to filter the internal voltage reference; this pin supplies the embedded analog circuitry.
3 SS/INH passive An open collector stage can disable the device by clamping this pin to GND (INH mode), and an internal current generator (4 A typ.) charges the external capacitor to implement the soft-start.
4 SYNCH/ISKP input This pin selects Master/Slave synchronization in LNM and skip current level in LCM, and in LNM it should be left floating when not used.
5 FSW input A pull-up resistor (E24 series only) to VCC or pull-down to GND selects the switching frequency, with pinstrapping active only before the soft-start phase.
6 MLF input A pull-up resistor (E24 series only) to VCC or pull-down to GND selects the low noise mode/low consumption mode and the active RST threshold, with pinstrapping active only before the soft-start phase.
7 COMP output This is the output of the error amplifier, to which the designed compensation network is connected.
8 DELAY passive An external capacitor connected at this pin sets the time DELAY to assert the rising edge of the RST open collector output after the output voltage is over the reset threshold; if left floating, RST acts like a Power Good.
9 VOUT input This pin is the output voltage sensing input.
10 SGND power_in This is the signal GND and must be connected to the exposed pad.
11 PGND power_in This is a power GND pin and must be connected to the exposed pad.
12 PGND power_in This is a power GND pin and must be connected to the exposed pad.
13 LX output This is the switching node, with absolute maximum voltage of -0.3 V to VIN + 0.3 V.
14 LX output This is the switching node, with absolute maximum voltage of -0.3 V to VIN + 0.3 V.
15 VIN power_in This is the DC input voltage pin, with an operating input voltage range of 4 V to 38 V.
16 VBIAS power_in This pin is typically connected to the regulated output voltage to supply part of the analog circuitry for better light-load efficiency, and it should be connected to GND if not used.
17 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package HTSSOP-16-EP
Category Power Management ICs
Pins 17

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Operating input voltage range VIN 4 38 V 8
VCC UVLO rising threshold VINH 2.7 3.5 V 8
VCC UVLO falling threshold VINL 2.4 3.5 V 8
Peak current limit IPK 2.3 A Duty cycle < 20% 8
Peak current limit IPK 1.8 A Duty cycle = 100%, closed loop operation 8
Valley current limit IVY 2.4 A 8
Programmable skip current limit ISKIPH 0.2 0.4 0.6 A LCM, VSYNCH = GND 8
Reverse current limit IVY_SNK 0.5 1 2 A LNM or VOUT overvoltage 8
High-side RDSON RDSON HS 0.18 0.36 ISW = 1 A 8
Low-side RDSON RDSON LS 0.15 0.3 ISW = 1 A 8
FSW biasing current IFSW 0 500 nA SS ended 8
MLF biasing current IMLF 0 500 nA SS ended 8
Duty cycle D 0 100 % 8
Minimum on time TON MIN 80 ns 8
VCC LDO output voltage VCC 2.9 3.3 3.6 V VBIAS = GND (no switchover) 8
SWO VBIAS threshold, switch supply from VIN to VBIAS SWO 2.85 3.2 V 3 V < VBIAS < 5.5 V 8
SWO VBIAS threshold, switch supply from VBIAS to VIN SWO 2.78 3.15 V 3 V < VBIAS < 5.5 V 8
Shutdown current from VIN ISHTDWN 4 8 15 µA VSS/INH = GND 9
Quiescent current from VIN, LCM with SWO IQ OPVIN 4 10 15 µA LCM - SWO, VREF < VFB < VOVP (SLEEP), VBIAS = 3.3 V 9
Quiescent current from VIN, LCM without SWO IQ OPVIN 35 70 120 µA LCM - NO SWO, VREF < VFB < VOVP (SLEEP), VBIAS = GND 9
Quiescent current from VIN, LNM with SWO IQ OPVIN 0.5 1.5 5 mA LNM - SWO, VFB = GND (NO SLEEP), VBIAS = 3.3 V 9
Quiescent current from VIN, LNM without SWO IQ OPVIN 2 2.8 6 mA LNM - NO SWO, VFB = GND (NO SLEEP), VBIAS = GND 9
Quiescent current from VBIAS, LCM with SWO IQ OPVBIAS 25 50 115 µA LCM - SWO, VREF < VFB < VOVP (SLEEP), VBIAS = 3.3 V 9
Quiescent current from VBIAS, LNM with SWO IQ OPVBIAS 0.5 1.2 5 mA LNM - SWO, VFB = GND (NO SLEEP), VBIAS = 3.3 V 9
VSS threshold, SS rising VINH 200 460 700 mV SS rising 9
VSS hysteresis VINH HYST 100 140 mV 9
CSS charging current ISS CH 1 µA VSS < VINH OR t < TSS SETUP OR VEA+ > VFB 9
CSS charging current ISS CH 4 µA t > TSS SETUP AND VEA+ < VFB 9
Start of internal error amplifier ramp VSS START 0.995 1.1 1.15 V 9
VOUT voltage feedback, 5 V variant VOUT 4.925 5 5.075 V A6986F5V 9
VOUT biasing current, 5 V variant IVOUT 7.5 10 13.5 µA 5 V (A6986F5V) 9
Error amplifier gain AV 100 dB 10
Current sense transconductance gCS 2.5 A/V Ipk = 1 A 10
Slope compensation VPP*gCS 0.45 0.75 1 A 10
Overvoltage trip (VOVP/VREF) VOVP 1.15 1.2 1.25 10
Overvoltage hysteresis VOVP HYST 0.5 2 5 % 10
Synchronization frequency fSYN MIN 266.5 kHz LNM; fSW = VCC 10
SYNCH input threshold VSYN TH 0.7 1.2 V LNM, SYNCH rising 10
SYNCH pull-down current ISYN 0.7 mA LNM, VSYN = 1.2 V 10
SYNCH high level output VSYN OUT 1.4 V LNM, 5 mA sinking load 10
SYNCH low level output VSYN OUT 0.6 V LNM, 0.7 mA sourcing load 10
RST hysteresis VTHR HYST 2 % 10
RST threshold, 5 V variant, 93% target VRST 4.557 4.65 4.743 V LCM, RVCC 0, RGND NC, VRST/VOUT 93% 12
RST threshold, 5 V variant, 80% target VRST 3.92 4 4.08 V LCM, RVCC 8.2 kOhm, RGND NC, VRST/VOUT 80% 12
RST threshold, 5 V variant, 87% target VRST 4.263 4.35 4.437 V LCM, RVCC 18 kOhm, RGND NC, VRST/VOUT 87% 12
RST threshold, 5 V variant, 96% target VRST 4.704 4.8 4.896 V LCM, RVCC 39 kOhm, RGND NC, VRST/VOUT 96% 12
Selected RST delay threshold VTHD 1.19 1.234 1.258 V VFB > VTHR 10
Thermal shutdown temperature TSHDWN 165 °C 10
Thermal shutdown hysteresis THYS 30 °C 10
Input voltage absolute maximum VIN -0.3 40 V 6
VOUT absolute maximum VOUT -0.3 10 V 6
Operating junction temperature range TJ -40 150 °C 6
Storage temperature range TSTG -65 150 °C 6
Lead temperature TLEAD 260 °C soldering 10 sec. 6
High-side / low-side switch current IHS, ILS 2 A 6
Thermal resistance junction to ambient Rth JA 40 °C/W device soldered on the STMicroelectronics demonstration board 7
Thermal resistance junction to exposed pad Rth JC 5 °C/W for board design 7

CAD (KiCad official)

  • Symbol: A6986F5VTR
  • Footprint: Package_SO:TSSOP-16-1EP_4.4x5mm_P0.65mm
  • 3D model: HTSSOP-16-EP (KiCad packages3D, STEP)
  • 3D model files: a6986f5vtr-etched.step / a6986f5vtr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); a6986f5vtr.step / a6986f5vtr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (79 pp, sha256 45ee66d8f0b77549, retrieved 2026-10-30, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF