main
History Download
Ray Publish 0.1.0 5d776db 3d ago

A5988GEVTR-T

Allegro MicroSystems, LLC · Motor Driver ICs · QFN-36-EP(6x6)

A5988GEVTR-T from Allegro MicroSystems, LLC, in a QFN-36-EP(6x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 I04 input Control input for bridge 4 current level (I0 bit); logic high VIN(1) ≥ 2 V, low ≤ 0.8 V.
2 OUT1A output DMOS full-bridge 1 output A, rated up to 1.6 A and 40 V.
3 SENSE1 passive Sense resistor terminal for bridge 1; voltage must not exceed ±500 mV.
4 OUT1B output DMOS full-bridge 1 output B, rated up to 1.6 A and 40 V.
5 VBB1 power_in Load supply voltage for bridges 1 and 2, operating range 8 to 40 V.
6 OUT2B output DMOS full-bridge 2 output B, rated up to 1.6 A and 40 V.
7 SENSE2 passive Sense resistor terminal for bridge 2; voltage must not exceed ±500 mV.
8 OUT2A output DMOS full-bridge 2 output A, rated up to 1.6 A and 40 V.
9 PHASE4 input Control input setting the current direction (phase) of bridge 4.
10 PHASE3 input Control input setting the current direction (phase) of bridge 3.
11 SLEEPn input Active-low sleep mode input; low disables much of the internal circuitry including the charge pump, with sleep current <1 µA typical.
12 VREF1 input Analog reference input for bridge 1 current trip level, operating range 0 to 1.5 V.
13 VREF2 input Analog reference input for bridge 2 current trip level, operating range 0 to 1.5 V.
14 VREF3 input Analog reference input for bridge 3 current trip level, operating range 0 to 1.5 V.
15 VREF4 input Analog reference input for bridge 4 current trip level, operating range 0 to 1.5 V.
16 GND power_in Analog and digital ground; must be connected externally to PGND and the thermal pad under the device.
17 PHASE2 input Control input setting the current direction (phase) of bridge 2.
18 PHASE1 input Control input setting the current direction (phase) of bridge 1.
19 I14 input Control input for bridge 4 current level (I1 bit); logic high VIN(1) ≥ 2 V, low ≤ 0.8 V.
20 OUT4A output DMOS full-bridge 4 output A, rated up to 1.6 A and 40 V.
21 SENSE4 passive Sense resistor terminal for bridge 4; voltage must not exceed ±500 mV.
22 OUT4B output DMOS full-bridge 4 output B, rated up to 1.6 A and 40 V.
23 VBB2 power_in Load supply voltage for bridges 3 and 4, operating range 8 to 40 V.
24 OUT3B output DMOS full-bridge 3 output B, rated up to 1.6 A and 40 V.
25 SENSE3 passive Sense resistor terminal for bridge 3; voltage must not exceed ±500 mV.
26 OUT3A output DMOS full-bridge 3 output A, rated up to 1.6 A and 40 V.
27 I13 input Control input for bridge 3 current level (I1 bit); logic high VIN(1) ≥ 2 V, low ≤ 0.8 V.
28 I12 input Control input for bridge 2 current level (I1 bit); logic high VIN(1) ≥ 2 V, low ≤ 0.8 V.
29 I11 input Control input for bridge 1 current level (I1 bit); logic high VIN(1) ≥ 2 V, low ≤ 0.8 V.
30 PGND power_in Power ground; must be connected externally to GND and the thermal pad under the device.
31 VCP passive Reservoir capacitor terminal; a 0.1 µF ceramic capacitor is required between VCP and VBBx.
32 CP1 passive Charge pump capacitor terminal; a 0.1 µF ceramic capacitor is connected between CP1 and CP2.
33 CP2 passive Charge pump capacitor terminal; a 0.1 µF ceramic capacitor is connected between CP1 and CP2.
34 I01 input Control input for bridge 1 current level (I0 bit); logic high VIN(1) ≥ 2 V, low ≤ 0.8 V.
35 I02 input Control input for bridge 2 current level (I0 bit); logic high VIN(1) ≥ 2 V, low ≤ 0.8 V.
36 I03 input Control input for bridge 3 current level (I0 bit); logic high VIN(1) ≥ 2 V, low ≤ 0.8 V.
37 PAD passive Exposed pad for enhanced thermal performance; should be soldered to the PCB and connected together with GND and PGND.

Key specifications

Parameter Value
Manufacturer Allegro MicroSystems, LLC
Package QFN-36-EP(6x6)
Category Power Management ICs
Pins 37

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Load Supply Voltage Range VBB 8 40 V Operating 4
Source driver on resistance RDS(on) 500 600 mΩ IOUT = -1.2 A, TJ = 25°C 4
Sink driver on resistance RDS(on) 500 600 mΩ IOUT = 1.2 A, TJ = 25°C 4
Output diode forward voltage Vf 1.2 V IOUT = 1.2 A 4
Output Leakage IDSS -20 20 µA Outputs, VOUT = 0 to VBB 4
VBB Supply Current, outputs on IBB 23 mA IOUT = 0 mA, outputs on, PWM = 50 kHz, DC = 50% 4
VBB Supply Current, outputs off IBB 13.7 16 mA Outputs off 4
VBB Supply Current, sleep mode IBB -10 1 10 µA Sleep mode; typ printed as <1 4
Output Driver Slew Rate SROUT 50 100 150 ns 10% to 90% 4
Logic Input Voltage high VIN(1) 2 V 4
Logic Input Voltage low VIN(0) 0.8 V 4
Logic Input Current IIN -20 1 20 µA VIN = 0 to 5 V; typ printed as <1 4
Logic Input Hysteresis Vhys 150 300 500 mV 4
Sleep Rising Threshold 2.5 2.7 2.95 V 4
Sleep Falling Threshold 2.4 V 4
Sleep Hysteresis 250 325 450 mV 4
Sleep Input Current 100 150 µA 4
Crossover Delay tCOD 250 425 1000 ns 4
Blank Time tBLANK 0.7 1 1.3 µs 4
VREFx Pin Input Voltage Range VREFx 0 1.5 V Operating 4
VREFx Pin Reference Input Current IREF -1 1 μA VREF = 1.5 4
Current Trip-Level Error, 100% VERR -5 5 % VREF = 1.5, phase current = 100% 4
Current Trip-Level Error, 67% VERR -5 5 % VREF = 1.5, phase current = 67% 4
Current Trip-Level Error, 33% VERR -15 15 % VREF = 1.5, phase current = 33% 4
VBB UVLO Threshold VUV(VBB) 7.3 7.6 7.9 V VBB rising 4
VBB UVLO Hysteresis VUV(VBB)hys 400 500 600 mV 4
Overcurrent Protection Threshold 1.6 A 4
Fault Output Voltage 0.5 V IOUT = 1 mA 4
Fault Output Leakage Current 1 µA No fault, VOUT = 5 V 4
Thermal Shutdown Temperature TJTSD 155 165 175 °C 4
Thermal Shutdown Hysteresis TJTSDhys 15 °C 4
Load Supply Voltage VBB -0.5 40 V 2
Output Current IOUT 1.6 A May be limited by duty cycle, ambient temperature, and heat sinking; do not exceed Junction Temperature of 150°C 2
Logic Input Voltage Range VIN -0.3 7 V 2
SENSEx Pin Voltage VSENSEx 0.5 V 2
SENSEx Pin Voltage, pulsed VSENSEx 2.5 V Pulsed tw < 1 µs 2
VREFx Pin Voltage VREFx 2.5 V 2
Operating Temperature Range TA -40 105 ºC Range G 2
Junction Temperature TJ(max) 150 ºC 2
Storage Temperature Range Tstg -40 125 ºC 2
Package Thermal Resistance RθJA 27 ºC/W EV package, 4-layer PCB based on JEDEC standard 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin package height of 0.90 mm. The JP is a 7 mm × 7 mm 48-pin LQFP. Both packages are lead (Pb) free, with 100% matte-tin 1

CAD (KiCad official)

  • Symbol: A5988GEVTR-T
  • Footprint: Package_DFN_QFN:QFN-36-1EP_6x6mm_P0.5mm_EP3.7x3.7mm
  • 3D model: QFN-36-EP(6x6) (KiCad packages3D, STEP)
  • 3D model files: a5988gevtr-t-etched.step / a5988gevtr-t-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); a5988gevtr-t.step / a5988gevtr-t.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Allegro MicroSystems, LLC datasheet (14 pp, sha256 df96e240d5e64639, retrieved 2026-10-30, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF