component
A3944KLPTR-T
Public Made by Adomby adom
Allegro MicroSystems, LLC Motor Driver ICs, TSSOP-28-EP. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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A3944KLPTR-T
Allegro MicroSystems, LLC · Motor Driver ICs · TSSOP-28-EP
A3944KLPTR-T from Allegro MicroSystems, LLC, in a TSSOP-28-EP. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | VDR | power_in | Positive gate drive supply for the GATx outputs, with an absolute maximum rating of -0.3 to 6.5 V. |
| 2 | GAT0 | output | Gate drive 0 output, driven between GND and VDR and connected directly or through a resistor to the external MOSFET gate. |
| 3 | DRN0 | input | Gate drive 0 drain sense analog high-voltage input, rated to 50 V, used to monitor the FET drain for short-to-battery, short-to-ground and open-load faults. |
| 4 | GAT1 | output | Gate drive 1 output, driven between GND and VDR and connected directly or through a resistor to the external MOSFET gate. |
| 5 | DRN1 | input | Gate drive 1 drain sense analog high-voltage input, rated to 50 V, used to monitor the FET drain for short-to-battery, short-to-ground and open-load faults. |
| 6 | GAT2 | output | Gate drive 2 output, driven between GND and VDR and connected directly or through a resistor to the external MOSFET gate. |
| 7 | DRN2 | input | Gate drive 2 drain sense analog high-voltage input, rated to 50 V, used to monitor the FET drain for short-to-battery, short-to-ground and open-load faults. |
| 8 | GAT3 | output | Gate drive 3 output, driven between GND and VDR and connected directly or through a resistor to the external MOSFET gate. |
| 9 | DRN3 | input | Gate drive 3 drain sense analog high-voltage input, rated to 50 V, used to monitor the FET drain for short-to-battery, short-to-ground and open-load faults. |
| 10 | GAT4 | output | Gate drive 4 output, driven between GND and VDR and connected directly or through a resistor to the external MOSFET gate. |
| 11 | DRN4 | input | Gate drive 4 drain sense analog high-voltage input, rated to 50 V, used to monitor the FET drain for short-to-battery, short-to-ground and open-load faults. |
| 12 | GAT5 | output | Gate drive 5 output, driven between GND and VDR and connected directly or through a resistor to the external MOSFET gate. |
| 13 | DRN5 | input | Gate drive 5 drain sense analog high-voltage input, rated to 50 V, used to monitor the FET drain for short-to-battery, short-to-ground and open-load faults. |
| 14 | VREG | power_out | Regulated voltage output for analog and reference functions, with an absolute maximum rating of -0.3 to 20 V. |
| 15 | VBB | power_in | Analog battery supply for the voltage regulator, which can connect to battery through reverse polarity protection, with an absolute maximum rating of -0.3 to 40 V. |
| 16 | GND | power_in | Power ground return that connects to the common return point for all external MOSFET source connections. |
| 17 | IN5 | input | Gate drive 5 active-high control input with internal pull-down to GND, rated -0.3 to 6.5 V. |
| 18 | IN4 | input | Gate drive 4 active-high control input with internal pull-down to GND, rated -0.3 to 6.5 V. |
| 19 | IN3 | input | Gate drive 3 active-high control input with internal pull-down to GND, rated -0.3 to 6.5 V. |
| 20 | IN2 | input | Gate drive 2 active-high control input with internal pull-down to GND, rated -0.3 to 6.5 V. |
| 21 | IN1 | input | Gate drive 1 active-high control input with internal pull-down to GND, rated -0.3 to 6.5 V. |
| 22 | IN0 | input | Gate drive 0 active-high control input with internal pull-down to GND, rated -0.3 to 6.5 V. |
| 23 | CSN | input | Active-low serial interface chip select with pull-up resistor; data is latched into the serial register when CSN goes high, rated -0.3 to 6.5 V. |
| 24 | SI | input | Active-high serial data input with pull-down resistor, clocked into the serial register on the rising edge of SCK, rated -0.3 to 6.5 V. |
| 25 | SCK | input | Serial interface clock input with pull-down resistor, rated -0.3 to 6.5 V. |
| 26 | SO | output | Push-pull serial data output that carries fault register data on the falling edge of SCK and goes high impedance when CSN is high, rated -0.3 to 6.5 V. |
| 27 | RESETN | input | Active-low chip reset input that forces outputs low, resets the configuration and clears channel faults when held low longer than the minimum reset pulse width, rated -0.3 to 6.5 V. |
| 28 | VDD | power_in | Positive logic supply for digital inputs, outputs and logic, with an absolute maximum rating of -0.3 to 6.5 V. |
| 29 | PAD | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Allegro MicroSystems, LLC |
| Package | TSSOP-28-EP |
| Category | Power Management ICs |
| Pins | 29 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Analog Supply Voltage | VBB | -0.3 | 40 | V | with respect to ground at TA = 25°C | 2 | |
| Logic Supply Voltage | VDD | -0.3 | 6.5 | V | with respect to ground at TA = 25°C | 2 | |
| Gate Drive Supply Voltage | VDR | -0.3 | 6.5 | V | with respect to ground at TA = 25°C | 2 | |
| Terminal VREG | VREG | -0.3 | 20 | V | with respect to ground at TA = 25°C | 2 | |
| Terminals GATx | GATx | -0.3 | 6.5 | V | with respect to ground at TA = 25°C | 2 | |
| Terminals DRNx | DRNx | -0.3 | 50 | V | with respect to ground at TA = 25°C | 2 | |
| Terminals INx | INx | -0.3 | 6.5 | V | with respect to ground at TA = 25°C | 2 | |
| Terminals SI, SCK, CSN | -0.3 | 6.5 | V | with respect to ground at TA = 25°C | 2 | ||
| Terminal SO | SO | -0.3 | 6.5 | V | with respect to ground at TA = 25°C | 2 | |
| Terminal RESETN | RESETN | -0.3 | 6.5 | V | with respect to ground at TA = 25°C | 2 | |
| Drain Feedback Clamp Energy | EDRNC | 10 | µJ | Single pulse less than 2 ms | 2 | ||
| Drain Feedback Clamp Current | IDRNC | 100 | mA | Single pulse not exceeding EDRN or PDRN | 2 | ||
| Drain Feedback Clamp Power | PDRNC | 100 | mW | Average power over any 2 ms period | 2 | ||
| Junction Temperature | TJ(max) | 150 | °C | 2 | |||
| Transient Junction Temperature | TtJ | 175 | °C | Overtemperature event not exceeding 10 s, lifetime duration not exceeding 10 hours | 2 | ||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 2 | ||
| Operating Temperature Range, Range K | TA | -40 | 150 | °C | Range K | 2 | |
| Logic Supply Voltage | VDD | 3 | 5.5 | V | Valid at TJ = -40°C to 150°C | 6 | |
| Analog Supply Voltage | VBB | 6 | 40 | V | Valid at TJ = -40°C to 150°C | 6 | |
| Gate Drive Supply Voltage | VDR | 3 | 6 | V | Valid at TJ = -40°C to 150°C | 6 | |
| VDD Quiescent Current | IDDQ | 3 | mA | 6 | |||
| VBB Quiescent Current | IBBQ | 4 | mA | 6 | |||
| VBB Quiescent Current | IBBQ | 10 | µA | VDD = 0, VBB ≤ 30 V | 6 | ||
| VDR Quiescent Current | IDRQ | 4 | mA | 6 | |||
| Regulator Voltage | VREG | 17.5 | 18.5 | V | VBB > 19.5 V | 6 | |
| Regulator Dropout | VDO | 0 | 0.6 | V | 6 | ||
| RESETN Pulse Width | tRST | 1 | µs | 6 | |||
| RESETN Glitch Filter | tRGF | 200 | ns | 6 | |||
| Oscillator Frequency | fOSC | 1.4 | 2 | 2.6 | MHz | 6 | |
| Input High Voltage | VIH | 70 | %VDD | 6 | |||
| Input Low Voltage | VIL | 30 | %VDD | 6 | |||
| Input Hysteresis | VIhys | 300 | 500 | mV | 6 | ||
| SO Output Low Voltage | VOL | 0.2 | 0.4 | V | SO, IOL = 2 mA | 6 | |
| SO Output Leakage | IL | -1 | 1 | µA | CSN = VDD | 6 | |
| Pull-Up On-Resistance | RDS(on)UP | 50 | 70 | Ω | TJ = 25°C, IGHx = -20 mA | 6 | |
| Pull-Up On-Resistance | RDS(on)UP | 75 | 125 | Ω | TJ = 150°C, IGHx = -20 mA | 6 | |
| Pull-Down On-Resistance | RDS(on)DN | 50 | 95 | Ω | TJ = 25°C, IGLx = 20 mA | 6 | |
| Pull-Down On-Resistance | RDS(on)DN | 75 | 145 | Ω | TJ = 150°C, IGLx = 20 mA | 6 | |
| Output Sink Current | IGL | 20 | mA | GATx off, VGATx = VDR | 6 | ||
| Output Source Current | IGH | -40 | mA | GATx on, VGATx = 0 V | 6 | ||
| Minimum On-Time | ton | 1 | µs | At INx input | 6 | ||
| Minimum Off-Time | toff | 1 | µs | At INx input | 6 | ||
| RESETN to GATx | 0.5 | 1 | µs | 6 | |||
| Drain Clamp Voltage | VDCL | 45 | V | IDRNx = 10 µA | 7 | ||
| Drain Clamp Leakage | IDC | 1 | µA | VDRNx < 32 V | 7 | ||
| VDD Undervoltage Lockout | VDDUV | 2.6 | 2.75 | 2.9 | V | Decreasing VDD | 8 |
| VREG Undervoltage Lockout | VREGUV | 4.5 | 4.8 | 5.1 | V | Decreasing VREG | 8 |
| Overtemperature Warning Threshold | TJW | 145 | 160 | 175 | ºC | Temperature increasing | 8 |
| Short-to-Battery Threshold | VSTB | 30 | 31 | 32 | %VREG | GATx driven high, SB[2:0] = 111 | 7 |
| Pull-Up Diagnostic Current | IDPU | -80 | -65 | -50 | µA | GATx low, VDRNx < (VOCL, 200 mV) | 7 |
| Pull-Down Diagnostic Current | IDPD | 50 | 65 | 80 | µA | GATx low, NPD = 0, VDRNx >(VOCL + 200 mV) | 7 |
| Short-to-Ground Threshold | VSTG | 65 | 66 | 67 | %VREG | GATx driven low, SG = 1 | 7 |
| Short-to-Ground Threshold | VSTG | 44 | 45 | 46 | %VREG | GATx driven low, SG = 0 | 7 |
| Open-Load Threshold | VOL | 75 | 76 | 77 | %VREG | GATx driven low | 7 |
| Open-Load Clamp Voltage | VOCL | 70 | 71 | 72 | %VREG | 7 | |
| Package Thermal Resistance, Junction to Ambient | RθJA | 28 | ºC/W | 4-layer PCB based on JEDEC standard | 2 | ||
| Package Thermal Resistance, Junction to Ambient | RθJA | 32 | ºC/W | 2-layer PCB with 3.8 in.2 of copper area each side | 2 | ||
| Package Thermal Resistance, Junction to Pad | RθJP | 2 | ºC/W | 2 | |||
| Drain Clamp Voltage | VDCL | 54 | V | IDRNx = 10 mA | 7 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | tin | LP) with an exposed thermal pad. The package is lead (Pb) free with 100% matte-tin leadframe plating. | 1 |
CAD (KiCad official)
- Symbol:
A3944KLPTR-T - Footprint:
Package_SO:TSSOP-28-1EP_4.4x9.7mm_P0.65mm_EP2.85x6.7mm - 3D model: TSSOP-28-EP (KiCad packages3D, STEP)
- 3D model files:
a3944klptr-t-etched.step/a3944klptr-t-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);a3944klptr-t.step/a3944klptr-t.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Allegro MicroSystems, LLC datasheet (31 pp, sha256
01679bb65c0b7218, retrieved 2026-10-28, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# A3944KLPTR-T
**Allegro MicroSystems, LLC** · Motor Driver ICs · TSSOP-28-EP
A3944KLPTR-T from Allegro MicroSystems, LLC, in a TSSOP-28-EP. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | VDR | power_in | Positive gate drive supply for the GATx outputs, with an absolute maximum rating of -0.3 to 6.5 V. |
| 2 | GAT0 | output | Gate drive 0 output, driven between GND and VDR and connected directly or through a resistor to the external MOSFET gate. |
| 3 | DRN0 | input | Gate drive 0 drain sense analog high-voltage input, rated to 50 V, used to monitor the FET drain for short-to-battery, short-to-ground and open-load faults. |
| 4 | GAT1 | output | Gate drive 1 output, driven between GND and VDR and connected directly or through a resistor to the external MOSFET gate. |
| 5 | DRN1 | input | Gate drive 1 drain sense analog high-voltage input, rated to 50 V, used to monitor the FET drain for short-to-battery, short-to-ground and open-load faults. |
| 6 | GAT2 | output | Gate drive 2 output, driven between GND and VDR and connected directly or through a resistor to the external MOSFET gate. |
| 7 | DRN2 | input | Gate drive 2 drain sense analog high-voltage input, rated to 50 V, used to monitor the FET drain for short-to-battery, short-to-ground and open-load faults. |
| 8 | GAT3 | output | Gate drive 3 output, driven between GND and VDR and connected directly or through a resistor to the external MOSFET gate. |
| 9 | DRN3 | input | Gate drive 3 drain sense analog high-voltage input, rated to 50 V, used to monitor the FET drain for short-to-battery, short-to-ground and open-load faults. |
| 10 | GAT4 | output | Gate drive 4 output, driven between GND and VDR and connected directly or through a resistor to the external MOSFET gate. |
| 11 | DRN4 | input | Gate drive 4 drain sense analog high-voltage input, rated to 50 V, used to monitor the FET drain for short-to-battery, short-to-ground and open-load faults. |
| 12 | GAT5 | output | Gate drive 5 output, driven between GND and VDR and connected directly or through a resistor to the external MOSFET gate. |
| 13 | DRN5 | input | Gate drive 5 drain sense analog high-voltage input, rated to 50 V, used to monitor the FET drain for short-to-battery, short-to-ground and open-load faults. |
| 14 | VREG | power_out | Regulated voltage output for analog and reference functions, with an absolute maximum rating of -0.3 to 20 V. |
| 15 | VBB | power_in | Analog battery supply for the voltage regulator, which can connect to battery through reverse polarity protection, with an absolute maximum rating of -0.3 to 40 V. |
| 16 | GND | power_in | Power ground return that connects to the common return point for all external MOSFET source connections. |
| 17 | IN5 | input | Gate drive 5 active-high control input with internal pull-down to GND, rated -0.3 to 6.5 V. |
| 18 | IN4 | input | Gate drive 4 active-high control input with internal pull-down to GND, rated -0.3 to 6.5 V. |
| 19 | IN3 | input | Gate drive 3 active-high control input with internal pull-down to GND, rated -0.3 to 6.5 V. |
| 20 | IN2 | input | Gate drive 2 active-high control input with internal pull-down to GND, rated -0.3 to 6.5 V. |
| 21 | IN1 | input | Gate drive 1 active-high control input with internal pull-down to GND, rated -0.3 to 6.5 V. |
| 22 | IN0 | input | Gate drive 0 active-high control input with internal pull-down to GND, rated -0.3 to 6.5 V. |
| 23 | CSN | input | Active-low serial interface chip select with pull-up resistor; data is latched into the serial register when CSN goes high, rated -0.3 to 6.5 V. |
| 24 | SI | input | Active-high serial data input with pull-down resistor, clocked into the serial register on the rising edge of SCK, rated -0.3 to 6.5 V. |
| 25 | SCK | input | Serial interface clock input with pull-down resistor, rated -0.3 to 6.5 V. |
| 26 | SO | output | Push-pull serial data output that carries fault register data on the falling edge of SCK and goes high impedance when CSN is high, rated -0.3 to 6.5 V. |
| 27 | RESETN | input | Active-low chip reset input that forces outputs low, resets the configuration and clears channel faults when held low longer than the minimum reset pulse width, rated -0.3 to 6.5 V. |
| 28 | VDD | power_in | Positive logic supply for digital inputs, outputs and logic, with an absolute maximum rating of -0.3 to 6.5 V. |
| 29 | PAD | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Allegro MicroSystems, LLC |
| Package | TSSOP-28-EP |
| Category | Power Management ICs |
| Pins | 29 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Analog Supply Voltage | VBB | -0.3 | | 40 | V | with respect to ground at TA = 25°C | 2 |
| Logic Supply Voltage | VDD | -0.3 | | 6.5 | V | with respect to ground at TA = 25°C | 2 |
| Gate Drive Supply Voltage | VDR | -0.3 | | 6.5 | V | with respect to ground at TA = 25°C | 2 |
| Terminal VREG | VREG | -0.3 | | 20 | V | with respect to ground at TA = 25°C | 2 |
| Terminals GATx | GATx | -0.3 | | 6.5 | V | with respect to ground at TA = 25°C | 2 |
| Terminals DRNx | DRNx | -0.3 | | 50 | V | with respect to ground at TA = 25°C | 2 |
| Terminals INx | INx | -0.3 | | 6.5 | V | with respect to ground at TA = 25°C | 2 |
| Terminals SI, SCK, CSN | | -0.3 | | 6.5 | V | with respect to ground at TA = 25°C | 2 |
| Terminal SO | SO | -0.3 | | 6.5 | V | with respect to ground at TA = 25°C | 2 |
| Terminal RESETN | RESETN | -0.3 | | 6.5 | V | with respect to ground at TA = 25°C | 2 |
| Drain Feedback Clamp Energy | EDRNC | | | 10 | µJ | Single pulse less than 2 ms | 2 |
| Drain Feedback Clamp Current | IDRNC | | | 100 | mA | Single pulse not exceeding EDRN or PDRN | 2 |
| Drain Feedback Clamp Power | PDRNC | | | 100 | mW | Average power over any 2 ms period | 2 |
| Junction Temperature | TJ(max) | | | 150 | °C | | 2 |
| Transient Junction Temperature | TtJ | | | 175 | °C | Overtemperature event not exceeding 10 s, lifetime duration not exceeding 10 hours | 2 |
| Storage Temperature Range | Tstg | -55 | | 150 | °C | | 2 |
| Operating Temperature Range, Range K | TA | -40 | | 150 | °C | Range K | 2 |
| Logic Supply Voltage | VDD | 3 | | 5.5 | V | Valid at TJ = -40°C to 150°C | 6 |
| Analog Supply Voltage | VBB | 6 | | 40 | V | Valid at TJ = -40°C to 150°C | 6 |
| Gate Drive Supply Voltage | VDR | 3 | | 6 | V | Valid at TJ = -40°C to 150°C | 6 |
| VDD Quiescent Current | IDDQ | | | 3 | mA | | 6 |
| VBB Quiescent Current | IBBQ | | | 4 | mA | | 6 |
| VBB Quiescent Current | IBBQ | | | 10 | µA | VDD = 0, VBB ≤ 30 V | 6 |
| VDR Quiescent Current | IDRQ | | | 4 | mA | | 6 |
| Regulator Voltage | VREG | 17.5 | | 18.5 | V | VBB > 19.5 V | 6 |
| Regulator Dropout | VDO | 0 | | 0.6 | V | | 6 |
| RESETN Pulse Width | tRST | 1 | | | µs | | 6 |
| RESETN Glitch Filter | tRGF | | | 200 | ns | | 6 |
| Oscillator Frequency | fOSC | 1.4 | 2 | 2.6 | MHz | | 6 |
| Input High Voltage | VIH | 70 | | | %VDD | | 6 |
| Input Low Voltage | VIL | | | 30 | %VDD | | 6 |
| Input Hysteresis | VIhys | 300 | 500 | | mV | | 6 |
| SO Output Low Voltage | VOL | | 0.2 | 0.4 | V | SO, IOL = 2 mA | 6 |
| SO Output Leakage | IL | -1 | | 1 | µA | CSN = VDD | 6 |
| Pull-Up On-Resistance | RDS(on)UP | | 50 | 70 | Ω | TJ = 25°C, IGHx = -20 mA | 6 |
| Pull-Up On-Resistance | RDS(on)UP | | 75 | 125 | Ω | TJ = 150°C, IGHx = -20 mA | 6 |
| Pull-Down On-Resistance | RDS(on)DN | | 50 | 95 | Ω | TJ = 25°C, IGLx = 20 mA | 6 |
| Pull-Down On-Resistance | RDS(on)DN | | 75 | 145 | Ω | TJ = 150°C, IGLx = 20 mA | 6 |
| Output Sink Current | IGL | 20 | | | mA | GATx off, VGATx = VDR | 6 |
| Output Source Current | IGH | | | -40 | mA | GATx on, VGATx = 0 V | 6 |
| Minimum On-Time | ton | | | 1 | µs | At INx input | 6 |
| Minimum Off-Time | toff | | | 1 | µs | At INx input | 6 |
| RESETN to GATx | | | 0.5 | 1 | µs | | 6 |
| Drain Clamp Voltage | VDCL | 45 | | | V | IDRNx = 10 µA | 7 |
| Drain Clamp Leakage | IDC | | | 1 | µA | VDRNx < 32 V | 7 |
| VDD Undervoltage Lockout | VDDUV | 2.6 | 2.75 | 2.9 | V | Decreasing VDD | 8 |
| VREG Undervoltage Lockout | VREGUV | 4.5 | 4.8 | 5.1 | V | Decreasing VREG | 8 |
| Overtemperature Warning Threshold | TJW | 145 | 160 | 175 | ºC | Temperature increasing | 8 |
| Short-to-Battery Threshold | VSTB | 30 | 31 | 32 | %VREG | GATx driven high, SB[2:0] = 111 | 7 |
| Pull-Up Diagnostic Current | IDPU | -80 | -65 | -50 | µA | GATx low, VDRNx < (VOCL, 200 mV) | 7 |
| Pull-Down Diagnostic Current | IDPD | 50 | 65 | 80 | µA | GATx low, NPD = 0, VDRNx >(VOCL + 200 mV) | 7 |
| Short-to-Ground Threshold | VSTG | 65 | 66 | 67 | %VREG | GATx driven low, SG = 1 | 7 |
| Short-to-Ground Threshold | VSTG | 44 | 45 | 46 | %VREG | GATx driven low, SG = 0 | 7 |
| Open-Load Threshold | VOL | 75 | 76 | 77 | %VREG | GATx driven low | 7 |
| Open-Load Clamp Voltage | VOCL | 70 | 71 | 72 | %VREG | | 7 |
| Package Thermal Resistance, Junction to Ambient | RθJA | | 28 | | ºC/W | 4-layer PCB based on JEDEC standard | 2 |
| Package Thermal Resistance, Junction to Ambient | RθJA | | 32 | | ºC/W | 2-layer PCB with 3.8 in.2 of copper area each side | 2 |
| Package Thermal Resistance, Junction to Pad | RθJP | | 2 | | ºC/W | | 2 |
| Drain Clamp Voltage | VDCL | | 54 | | V | IDRNx = 10 mA | 7 |
## Materials and finish
As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | | tin | LP) with an exposed thermal pad. The package is lead (Pb) free with 100% matte-tin leadframe plating. | 1 |
## CAD (KiCad official)
- Symbol: `A3944KLPTR-T`
- Footprint: `Package_SO:TSSOP-28-1EP_4.4x9.7mm_P0.65mm_EP2.85x6.7mm`
- 3D model: TSSOP-28-EP (KiCad packages3D, STEP)
- 3D model files: `a3944klptr-t-etched.step` / `a3944klptr-t-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `a3944klptr-t.step` / `a3944klptr-t.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Allegro MicroSystems, LLC datasheet](docs/a3944klptr-t-datasheet.pdf) (31 pp, sha256 `01679bb65c0b7218`, retrieved 2026-10-28, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/a3944klptr-t-datasheet.pdf)