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README

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A31315LLUBTR-XZ-S-SE-10

Allegro MicroSystems, LLC · Position Sensor · TSSOP-14

A31315LLUBTR-XZ-S-SE-10 from Allegro MicroSystems, LLC, in a TSSOP-14. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 NC unconnected Not connected (die 1); connect to GND for optimal ESD performance.
2 NC unconnected Not connected (die 1); connect to GND for optimal ESD performance.
3 VCC_1 power_in Supply voltage for die 1, 4.5 to 5.5 V operating range.
4 NC unconnected Not connected (die 1); connect to GND for optimal ESD performance.
5 GND_1 power_in Ground for die 1.
6 OUT_1 output Device output of die 1 (ratiometric analog, PWM, or SENT).
7 NC unconnected Not connected (die 1); connect to GND for optimal ESD performance.
8 NC unconnected Not connected (die 2); connect to GND for optimal ESD performance.
9 VCC_2 power_in Supply voltage for die 2, 4.5 to 5.5 V operating range.
10 NC unconnected Not connected (die 2); connect to GND for optimal ESD performance.
11 GND_2 power_in Ground for die 2.
12 NC unconnected Not connected (die 2); connect to GND for optimal ESD performance.
13 OUT_2 output Device output of die 2 (ratiometric analog, PWM, or SENT).
14 NC unconnected Not connected (die 2); connect to GND for optimal ESD performance.

Key specifications

Parameter Value
Manufacturer Allegro MicroSystems, LLC
Package TSSOP-14
Category Sensors
Pins 14

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply Voltage VCC 4.5 5 5.5 V 8
Supply Buffer Capacitor CSUP 10 100 600 nF 8
Supply Current ICC 5 8.5 10 mA Each die 8
Ambient Operating Temperature TA -40 150 °C 8
Number of EEPROM Writes NEEPROM 100 writes TA = 25°C 8
Magnetic Flux Density /BIN/ 300 1000 G For xxx-10 parts, devices tested at /BIN/ = 300 G 8
Forward Supply Voltage VCC(absmax) 18 V Supply is clamped with 20 V limit to GND 4
Reverse Supply Voltage VRCC(absmax) -18 V Supply is clamped with -20 V limit to GND 4
Forward VOUT-VCC Voltage VOUT-CC(absmax) 18 V VOUT is clamped with 20 V limit to VCC 4
Forward Output Voltage VOUT(absmax) 18 V Output is clamped with 20 V limit to GND 4
Reverse Output Voltage VROUT(absmax) -6 V Output is clamped with -10 V limit to GND 4
Forward Supply Current ICC 30 mA 4
Reverse Supply Current IRCC -30 mA 4
Output Current Limit (source) IOUT(SOURCE) 30 mA VOUT shorted to GND 4
Output Current Limit (sink) IOUT(SINK) -30 mA VCC shorted to VOUT 4
Extended Operating Ambient Temperature TA(EXT) -45 165 °C Device will work within this temperature range, but performance is not specified 4
Maximum Junction Temperature TJ(MAX) 165 °C 4
Storage Temperature Tstg -65 165 °C 4
Package Thermal Resistance TSSOP-14 RϴJA 214 °C/W TSSOP-14 4
UVD Threshold (low, falling) VUVD(LOW, FALL) 3.6 4.1 V VCC falling, uvd_sel = '0' 9
UVD Threshold (low, rising) VUVD(LOW, RISE) 3.7 4.2 V VCC rising, uvd_sel = '0' 9
UVD Threshold (high, falling) VUVD(HIGH, FALL) 4.1 4.4 V VCC falling, uvd_sel = '1' 9
UVD Threshold (high, rising) VUVD(HIGH, RISE) 4.2 4.5 V VCC rising, uvd_sel = '1' 9
OVD Threshold (low, falling) VOVD(LOW, FALL) 5.6 6 V VCC falling, ovd_sel = '1' 9
OVD Threshold (low, rising) VOVD(LOW, RISE) 5.65 6.05 V VCC rising, ovd_sel = '1' 9
OVD Threshold (high, falling) VOVD(HIGH, FALL) 8.4 10.2 V VCC falling, ovd_sel = '0' 9
OVD Threshold (high, rising) VOVD(HIGH, RISE) 8.6 10.4 V VCC rising, ovd_sel = '0' 9
Power-On Reset Voltage (fall) VPOR(FALL) 2.6 2.9 V VCC falling 9
Power-On Reset Voltage (rise) VPOR(RISE) 2.8 3.1 V VCC rising 9
Power-On Time tPO 1 1.7 ms Time from VCC > VCC(MIN) until unfiltered output is settled 9
Oscillator Frequency fOSC 7.36 8 8.64 MHz 9
Angle Error (XZ) ERRANG(XZ) -1 1 degrees TA = 25°C 9
Angle Error (XZ) ERRANG(XZ) -1.2 1.2 degrees -40 ≤ TA ≤ 150°C 9
Angle Drift over temperature (XZ) DRIFTAng,Temp(XZ) -1.2 1.2 degrees Change in angle relative to TA = 25°C 9
Angle Drift over life (XZ) DRIFTAng,Life(XZ) -1.33 0.91 1.33 degrees Change in angle relative to pre-stress conditions 9
Channel Sensitivity Error (X) ERRSens(X,Y) -1.5 1.5 % TA = 25°C 10
Channel Sensitivity Error (X) ERRSens(X,Y) -3 3 % -40 ≤ TA ≤ 150°C 10
Channel Sensitivity Error (Z) ERRSens(Z) -1.5 1.5 % TA = 25°C 10
Channel Sensitivity Error (Z) ERRSens(Z) -4 4 % -40 ≤ TA ≤ 150°C 10
Channel Offset Error (X) ERROff(X,Y) -1.5 1.5 G TA = 25°C 10
Channel Offset Error (X) ERROff(X,Y) -4 4 G -40 ≤ TA ≤ 150°C 10
Channel Offset Error (Z) ERROff(Z) -1.5 1.5 G TA = 25°C 10
Channel Linearity Error (X) ERRLin(X,Y) -0.3 0.3 % 100 G ≤ BIN ≤ 1000 G 10
Channel Linearity Error (Z) ERRLin(Z) -0.3 0.3 % 100 G ≤ BIN ≤ 1000 G 10
Sensitivity Drift over temperature (X) DRIFTSens,Temp(X,Y) -2 2 % Change in sensitivity relative to TA = 25°C 10
Sensitivity Drift over life (X) DRIFTSens,Life(X,Y) -2.5 1.3 2.5 % Change in sensitivity relative to pre-stress conditions 10
Sensitivity Drift over temperature (Z) DRIFTSens,Temp(Z) -3 3 % Change in sensitivity relative to TA = 25°C 10
Sensitivity Drift over life (Z) DRIFTSens,Life(Z) -3.5 2.5 3.5 % Change in sensitivity relative to pre-stress conditions 10
Offset Drift over temperature (X) DRIFTOff,Temp(X,Y) -3.5 3.5 G Change in offset relative to TA = 25°C 10
Offset Drift over life (X) DRIFTOff,Life(X,Y) -0.9 0.25 0.9 G Change in offset relative to pre-stress conditions 10
Offset Drift over temperature (Z) DRIFTOff,Temp(Z) -1.5 1.5 G Change in offset relative to TA = 25°C 10
Offset Drift over life (Z) DRIFTOff,Life(Z) -0.6 0.5 0.6 G Change in offset relative to pre-stress conditions 10
Broken Wire Response Time tBW 500 µs Time after VCC, GND = 0.2 V, either VCC or GND wire broken, CL = 100 nF, CSUP = 100 nF 11
High-Z Leakage Ileak(Hi-Z) -10 10 µA Device in High-Z mode, output shorted to GND or VCC 11
Filter Step Response Time tRESP 396 450 µs bw_sel = 5, time to 90% response to step 11
Angle Update Rate tUPDATE 14.72 16 17.28 µs Valid for all bandwidth settings 11
SENT Tick Time tTICK 2.76 3 3.24 µs Valid for all SENT Modes, dig_out_data_rate = '0' 11
SENT Tick Time Tolerance TOLTICK -8 8 % Valid for all selectable tick times 11
SENT Output Saturation Voltage VSAT(LOW) 0.55 V Output current = -4.7 mA, VCC = 5 V, output FET on 11
SENT Output Load Resistance RL(PULLUP) 1.2 kΩ Output Current ≥ -10 mA 11
SENT Output High Voltage VOH 4.1 V High state voltage with 0.1 mA DC load current 11
SENT Output Low Voltage VOL 0.5 V Low state voltage with 0.52 mA DC load current 11
SENT Output Load Capacitance CL 4.7 5.7 nF 11

CAD (KiCad official)

  • Symbol: A31315LLUBTR-XZ-S-SE-10
  • Footprint: Package_SO:TSSOP-14_4.4x5mm_P0.65mm
  • 3D model: TSSOP-14 (KiCad packages3D, STEP)
  • 3D model files: a31315llubtr-xz-s-se-10-etched.step / a31315llubtr-xz-s-se-10-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); a31315llubtr-xz-s-se-10.step / a31315llubtr-xz-s-se-10.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Allegro MicroSystems, LLC datasheet (70 pp, sha256 5e17bbddc669f0d8, retrieved 2026-10-31, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF