component
A1015
Public Made by Adomby adom
Changjing Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 24d ago |
| viewers | 24d ago |
| a1015-etched.glb | 24d ago |
| a1015-etched.step | 24d ago |
| a1015-hero.glb | 24d ago |
| a1015-hero.overlay.json | 24d ago |
| a1015.glb | 24d ago |
| a1015.kicad_mod | 24d ago |
| a1015.kicad_sym | 24d ago |
| a1015.lbr | 24d ago |
| a1015.step | 24d ago |
| package.json | 24d ago |
| page.json | 17d ago |
| README.md | 17d ago |
A1015
Changjing · Bipolar (BJT) · SOT-23
A1015 from Changjing, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | passive | Base terminal of the PNP transistor, with emitter-base voltage limited to -5 V (VEBO) and base-emitter saturation voltage VBE(sat) of -1.1 V maximum at IC = -100 mA, IB = -10 mA. |
| 2 | EMITTER | passive | Emitter terminal of the PNP transistor, rated for an emitter-base voltage of -5 V (VEBO) and used with the -150 mA maximum continuous collector current. |
| 3 | COLLECTOR | passive | Collector terminal of the PNP transistor, rated for -50 V collector-base (VCBO) and -50 V collector-emitter (VCEO) with -150 mA continuous collector current and 200 mW collector power dissipation. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | -50 | V | IC= -100u A,IE=0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | -50 | V | IC= -0.1mA, IB=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | -5 | V | IE= -100 u A, IC=0 | 1 | ||
| Collector cut-off current | ICBO | -0.1 | μA | VCB=-50V ,IE=0 | 1 | ||
| Emitter cut-off current | IEBO | -0.1 | μA | VEB=- 5V, IC=0 | 1 | ||
| DC current gain | hFE | 130 | 400 | VCE=-6V,IC= -2mA | 1 | ||
| Collector-emitter saturation voltage | VCE(sat) | -0.3 | V | IC=-100 mA, IB= -10mA | 1 | ||
| Base-emitter saturation voltage | VBE(sat) | -1.1 | V | IC=-100 mA, IB= -10mA | 1 | ||
| Transition frequency | fT | 80 | MHz | VCE=-10V,IC= -1mA f=30MHz | 1 | ||
| Collector-base voltage | VCBO | -50 | V | 1 | |||
| Collector-emitter voltage | VCEO | -50 | V | 1 | |||
| Emitter-base voltage | VEBO | -5 | V | 1 | |||
| Collector current (-Continuous) | IC | 150 | mA | -Continuous | 1 | ||
| Collector power dissipation | PC | 200 | mW | 1 | |||
| Junction temperature | TJ | 150 | ℃ | 1 | |||
| Storage temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal resistance from junction to ambient | RθJA | 625 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
A1015 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
a1015-etched.step/a1015-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);a1015.step/a1015.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (1 pp, sha256
71cdb63cc25c91ea, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).