component
9N20
Public Made by Adomby adom
GOODWORK MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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9N20
GOODWORK · MOSFETs · TO-220
9N20 from GOODWORK, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET, with gate-source voltage rated at ±20 V. |
| 2 | Drain | passive | Drain terminal of the N-channel MOSFET, rated for 200 V drain-source voltage and 9 A continuous drain current at TC=25℃. |
| 3 | Source | passive | Source terminal of the N-channel MOSFET, serving as the reference for the gate-source voltage rating of ±20 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOODWORK |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 200 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TC=25℃ | 9 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | 5.2 | A | VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 10 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 2.45 | mJ | 1 | |||
| Avalanche Current | IAS | 7 | A | 1 | |||
| Total Power Dissipation | PD@TC=25℃ | 60 | W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient (Steady State) | RθJA | 40 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 2.5 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | 200 | V | VDS=0V,ID=250 A | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | A | VDS=160V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 50 | A | VDS=160V,VGS=0V,TJ=125 | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 250 | A | VDS=160V,VGS=0V,TJ=175 | 2 | ||
| Gate-body Leakage | IGSS | -100 | 100 | nA | VDS=0V, VGS= 20V | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VDS=VGS, ID=250 A | 2 | |
| On-State Drain Current | ID(on) | 10 | A | VDS 5 V, VGS =10 V | 2 | ||
| Static drain-Source On-resistance | RDS(on) | 0.216 | 0.27 | Ω | VGS=10V,ID=5A | 2 | |
| Static drain-Source On-resistance | RDS(on) | 0.54 | Ω | VGS=10V,ID=5A,TJ=125 | 2 | ||
| Static drain-Source On-resistance | RDS(on) | 0.71 | Ω | VGS=10V,ID=5A,TJ=175 | 2 | ||
| Static drain-Source On-resistance | RDS(on) | 0.24 | 0.3 | Ω | VGS=6V,ID=5A | 2 | |
| Turn-On Delay Time | tD(ON) | 10 | 15 | ns | VDD = 100V, ID=10A, RL= 10, RG= 2.5, VGEN=10V | 2 | |
| Rise Time | tR | 35 | 55 | ns | VDD = 100V, ID=10A, RL= 10, RG= 2.5, VGEN=10V | 2 | |
| Turn-Off Delay Time | tD(OFF) | 25 | 40 | ns | VDD = 100V, ID=10A, RL= 10, RG= 2.5, VGEN=10V | 2 | |
| Fall Time | tF | 40 | 60 | ns | VDD = 100V, ID=10A, RL= 10, RG= 2.5, VGEN=10V | 2 | |
| Total Gate Charge | Qg | 11 | 70 | nC | VDS=100V,VGS=10V, ID=10A | 2 | |
| Forward Transconductance | gfs | 15 | S | VDS=15V,ID=5A | 2 | ||
| Reverse Recovery Time | Trr | 100 | 150 | ns | IF=10A, dIF/dt=100A/ s | 2 | |
| Reverse Recovery Charge | Qrr | 0.25 | 0.6 | C | IF=10A, dIF/dt=100A/ s | 2 | |
| Reverse Recovery Current | IRM | 5 | 8 | A | IF=10A, dIF/dt=100A/ s | 2 | |
| Continuous Current | IS | 9 | A | 2 | |||
| Forward Voltage | VSD | 0.9 | 1.5 | V | IF = 10 A, VGS = 0 V | 2 |
CAD (KiCad official)
- Symbol:
9N20 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
9n20-etched.step/9n20-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);9n20.step/9n20.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: GOODWORK datasheet (6 pp, sha256
01cc4904e69da410, retrieved 2026-11-02, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# 9N20
**GOODWORK** · MOSFETs · TO-220
9N20 from GOODWORK, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET, with gate-source voltage rated at ±20 V. |
| 2 | Drain | passive | Drain terminal of the N-channel MOSFET, rated for 200 V drain-source voltage and 9 A continuous drain current at TC=25℃. |
| 3 | Source | passive | Source terminal of the N-channel MOSFET, serving as the reference for the gate-source voltage rating of ±20 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOODWORK |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 200 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID@TC=25℃ | | | 9 | A | VGS @ 10V | 1 |
| Continuous Drain Current | ID@TC=100℃ | | | 5.2 | A | VGS @ 10V | 1 |
| Pulsed Drain Current | IDM | | | 10 | A | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 2.45 | mJ | | 1 |
| Avalanche Current | IAS | | | 7 | A | | 1 |
| Total Power Dissipation | PD@TC=25℃ | | | 60 | W | | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-ambient (Steady State) | RθJA | | | 40 | ℃/W | | 1 |
| Thermal Resistance Junction-Case | RθJC | | | 2.5 | ℃/W | | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 200 | | | V | VDS=0V,ID=250 A | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | A | VDS=160V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 50 | A | VDS=160V,VGS=0V,TJ=125 | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 250 | A | VDS=160V,VGS=0V,TJ=175 | 2 |
| Gate-body Leakage | IGSS | -100 | | 100 | nA | VDS=0V, VGS= 20V | 2 |
| Gate Threshold Voltage | VGS(th) | 2 | | 4 | V | VDS=VGS, ID=250 A | 2 |
| On-State Drain Current | ID(on) | 10 | | | A | VDS 5 V, VGS =10 V | 2 |
| Static drain-Source On-resistance | RDS(on) | | 0.216 | 0.27 | Ω | VGS=10V,ID=5A | 2 |
| Static drain-Source On-resistance | RDS(on) | | | 0.54 | Ω | VGS=10V,ID=5A,TJ=125 | 2 |
| Static drain-Source On-resistance | RDS(on) | | | 0.71 | Ω | VGS=10V,ID=5A,TJ=175 | 2 |
| Static drain-Source On-resistance | RDS(on) | | 0.24 | 0.3 | Ω | VGS=6V,ID=5A | 2 |
| Turn-On Delay Time | tD(ON) | | 10 | 15 | ns | VDD = 100V, ID=10A, RL= 10, RG= 2.5, VGEN=10V | 2 |
| Rise Time | tR | | 35 | 55 | ns | VDD = 100V, ID=10A, RL= 10, RG= 2.5, VGEN=10V | 2 |
| Turn-Off Delay Time | tD(OFF) | | 25 | 40 | ns | VDD = 100V, ID=10A, RL= 10, RG= 2.5, VGEN=10V | 2 |
| Fall Time | tF | | 40 | 60 | ns | VDD = 100V, ID=10A, RL= 10, RG= 2.5, VGEN=10V | 2 |
| Total Gate Charge | Qg | | 11 | 70 | nC | VDS=100V,VGS=10V, ID=10A | 2 |
| Forward Transconductance | gfs | | 15 | | S | VDS=15V,ID=5A | 2 |
| Reverse Recovery Time | Trr | | 100 | 150 | ns | IF=10A, dIF/dt=100A/ s | 2 |
| Reverse Recovery Charge | Qrr | | 0.25 | 0.6 | C | IF=10A, dIF/dt=100A/ s | 2 |
| Reverse Recovery Current | IRM | | 5 | 8 | A | IF=10A, dIF/dt=100A/ s | 2 |
| Continuous Current | IS | | | 9 | A | | 2 |
| Forward Voltage | VSD | | 0.9 | 1.5 | V | IF = 10 A, VGS = 0 V | 2 |
## CAD (KiCad official)
- Symbol: `9N20`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `9n20-etched.step` / `9n20-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `9n20.step` / `9n20.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [GOODWORK datasheet](docs/9n20-datasheet.pdf) (6 pp, sha256 `01cc4904e69da410`, retrieved 2026-11-02, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/9n20-datasheet.pdf)