component
9015M-C
Public Made by Adomby adom
Foshan Blue Rocket Elec Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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9015M-C
Foshan Blue Rocket Elec · Bipolar (BJT) · SOT-23
9015M-C from Foshan Blue Rocket Elec, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | passive | Base of the silicon PNP transistor, used in low-level, low-noise pre-amplifier service; the datasheet gives an emitter-base voltage rating VEBO of -5.0 V and a collector current rating IC of -100 mA. |
| 2 | Emitter | passive | Emitter of the silicon PNP transistor; the emitter-base breakdown voltage VEBO is -5.0 V with IE = -0.1 mA at IC = 0. |
| 3 | C | passive | Collector of the silicon PNP transistor, rated at VCBO -50 V, VCEO -45 V, IC -100 mA and collector power dissipation PC 400 mW at Ta = 25 ℃. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Foshan Blue Rocket Elec |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector to Emitter Saturation Voltage | VCE(sat) | -0.2 | -0.7 | V | IC=-100mA IB=-5.0mA | 2 | |
| Base-Emitter Saturation Voltage | VBE(sat) | -0.82 | -1 | V | IC=-100mA IB=-5.0mA | 2 | |
| Base-Emitter Voltage | VBE | -0.65 | -0.75 | V | VCE=-5.0V IC=-2.0mA | 2 | |
| Collector to Base Breakdown Voltage | VCBO | -50 | V | IC=-0.1mA IE=0 | 2 | ||
| Collector to Emitter Breakdown Voltage | VCEO | -45 | V | IC=-1.0mA IB=0 | 2 | ||
| Emitter to Base Breakdown Voltage | VEBO | -5 | V | IE=-0.1mA IC=0 | 2 | ||
| Collector Cut-Off Current | ICBO | -0.05 | μA | VCB=-50V IE=0 | 2 | ||
| Emitter Cut-Off Current | IEBO | -0.05 | μA | VEB=-5.0V IC=0 | 2 | ||
| DC Current Gain | hFE | 60 | 600 | VCE=-5.0V IC=-1.0mA | 2 | ||
| DC Current Gain, hFE classification C (marking HM6C) | hFE | 200 | 600 | 1 | |||
| Transition Frequency | fT | 100 | 190 | MHz | VCE=-5.0V IC=-10mA | 2 | |
| Collector Output Capacitance | Cob | 4.5 | 7 | pF | VCB=-10V IE=0 f=1.0MHz | 2 | |
| Noise Figure | NF | 0.7 | 10 | dB | VCE=-5.0V IC=-0.2mA Rg=2.0KΩ f=1.0KHz Δf=200Hz | 2 | |
| Collector to Base Voltage | VCBO | -50 | V | Ta=25℃ | 2 | ||
| Collector to Emitter Voltage | VCEO | -45 | V | Ta=25℃ | 2 | ||
| Emitter to Base Voltage | VEBO | -5 | V | Ta=25℃ | 2 | ||
| Collector Current | IC | -100 | mA | Ta=25℃ | 2 | ||
| Collector Power Dissipation | PC | 400 | mW | Ta=25℃ | 2 | ||
| Junction Temperature | Tj | 150 | ℃ | 2 | |||
| Storage Temperature Range | Tstg | -55 | 150 | ℃ | 2 |
CAD (KiCad official)
- Symbol:
9015M-C - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
9015m-c-etched.step/9015m-c-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);9015m-c.step/9015m-c.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Foshan Blue Rocket Elec datasheet (6 pp, sha256
bea70987e56d8830, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# 9015M-C
**Foshan Blue Rocket Elec** · Bipolar (BJT) · SOT-23
9015M-C from Foshan Blue Rocket Elec, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | passive | Base of the silicon PNP transistor, used in low-level, low-noise pre-amplifier service; the datasheet gives an emitter-base voltage rating VEBO of -5.0 V and a collector current rating IC of -100 mA. |
| 2 | Emitter | passive | Emitter of the silicon PNP transistor; the emitter-base breakdown voltage VEBO is -5.0 V with IE = -0.1 mA at IC = 0. |
| 3 | C | passive | Collector of the silicon PNP transistor, rated at VCBO -50 V, VCEO -45 V, IC -100 mA and collector power dissipation PC 400 mW at Ta = 25 ℃. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Foshan Blue Rocket Elec |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector to Emitter Saturation Voltage | VCE(sat) | | -0.2 | -0.7 | V | IC=-100mA IB=-5.0mA | 2 |
| Base-Emitter Saturation Voltage | VBE(sat) | | -0.82 | -1 | V | IC=-100mA IB=-5.0mA | 2 |
| Base-Emitter Voltage | VBE | | -0.65 | -0.75 | V | VCE=-5.0V IC=-2.0mA | 2 |
| Collector to Base Breakdown Voltage | VCBO | -50 | | | V | IC=-0.1mA IE=0 | 2 |
| Collector to Emitter Breakdown Voltage | VCEO | -45 | | | V | IC=-1.0mA IB=0 | 2 |
| Emitter to Base Breakdown Voltage | VEBO | -5 | | | V | IE=-0.1mA IC=0 | 2 |
| Collector Cut-Off Current | ICBO | | | -0.05 | μA | VCB=-50V IE=0 | 2 |
| Emitter Cut-Off Current | IEBO | | | -0.05 | μA | VEB=-5.0V IC=0 | 2 |
| DC Current Gain | hFE | 60 | | 600 | | VCE=-5.0V IC=-1.0mA | 2 |
| DC Current Gain, hFE classification C (marking HM6C) | hFE | 200 | | 600 | | | 1 |
| Transition Frequency | fT | 100 | 190 | | MHz | VCE=-5.0V IC=-10mA | 2 |
| Collector Output Capacitance | Cob | | 4.5 | 7 | pF | VCB=-10V IE=0 f=1.0MHz | 2 |
| Noise Figure | NF | | 0.7 | 10 | dB | VCE=-5.0V IC=-0.2mA Rg=2.0KΩ f=1.0KHz Δf=200Hz | 2 |
| Collector to Base Voltage | VCBO | -50 | | | V | Ta=25℃ | 2 |
| Collector to Emitter Voltage | VCEO | -45 | | | V | Ta=25℃ | 2 |
| Emitter to Base Voltage | VEBO | -5 | | | V | Ta=25℃ | 2 |
| Collector Current | IC | -100 | | | mA | Ta=25℃ | 2 |
| Collector Power Dissipation | PC | | | 400 | mW | Ta=25℃ | 2 |
| Junction Temperature | Tj | | | 150 | ℃ | | 2 |
| Storage Temperature Range | Tstg | -55 | | 150 | ℃ | | 2 |
## CAD (KiCad official)
- Symbol: `9015M-C`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `9015m-c-etched.step` / `9015m-c-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `9015m-c.step` / `9015m-c.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Foshan Blue Rocket Elec datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586200718692241408) (6 pp, sha256 `bea70987e56d8830`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/9015m-c-datasheet.pdf)