component
9013M
Public Made by Adomby adom
Foshan Blue Rocket Elec Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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9013M
Foshan Blue Rocket Elec · Bipolar (BJT) · SOT-23
9013M from Foshan Blue Rocket Elec, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | passive | Base terminal of the NPN silicon transistor; base current IB is rated 100 mA maximum and emitter-base breakdown VEBO is 5.0 V. |
| 2 | E | passive | Emitter terminal of the NPN silicon transistor; emitter-base reverse voltage VEBO is limited to 5.0 V. |
| 3 | Collector | passive | Collector terminal of the NPN silicon transistor; rated at 40 V VCBO, 20 V VCEO, 500 mA collector current and 450 mW collector power dissipation. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Foshan Blue Rocket Elec |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector to Base Voltage | VCBO | 40 | V | 2 | |||
| Collector to Emitter Voltage | VCEO | 20 | V | 2 | |||
| Emitter to Base Voltage | VEBO | 5 | V | 2 | |||
| Collector Current | IC | 500 | mA | 2 | |||
| Base Current | IB | 100 | mA | 2 | |||
| Collector Power Dissipation | PC | 450 | mW | 2 | |||
| Junction Temperature | Tj | 150 | ℃ | 2 | |||
| Storage Temperature Range | Tstg | -55 | 150 | ℃ | 2 | ||
| Collector to Base Breakdown Voltage | VCBO | 40 | V | IC=0.1mA IE=0 | 2 | ||
| Collector to Emitter Breakdown Voltage | VCEO | 20 | V | IC=1.0mA IB=0 | 2 | ||
| Emitter to Base Breakdown Voltage | VEBO | 5 | V | IE=0.1mA IC=0 | 2 | ||
| Collector Cut-Off Current | ICBO | 0.1 | μA | VCB=25V IE=0 | 2 | ||
| Emitter Cut-Off Current | IEBO | 0.1 | μA | VEB=3.0V IC=0 | 2 | ||
| DC Current Gain hFE(1) | hFE(1) | 150 | 300 | VCE=1.0V IC=50mA | 2 | ||
| DC Current Gain hFE(2) | hFE(2) | 40 | VCE=1.0V IC=500mA | 2 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.16 | 0.6 | V | IC=500mA IB=50mA | 2 | |
| Base-Emitter Saturation Voltage | VBE(sat) | 0.91 | 1.2 | V | IC=500mA IB=50mA | 2 | |
| Base-Emitter Voltage | VBE | 0.67 | 0.7 | V | VCE=1.0V IC=10mA | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| housing | PC | Base Current IB 100 mA Collector Power Dissipation PC 450 mW | 2 |
CAD (KiCad official)
- Symbol:
9013M - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
9013m-etched.step/9013m-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);9013m.step/9013m.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Foshan Blue Rocket Elec datasheet (6 pp, sha256
8f85f2a207349ac3, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# 9013M
**Foshan Blue Rocket Elec** · Bipolar (BJT) · SOT-23
9013M from Foshan Blue Rocket Elec, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | passive | Base terminal of the NPN silicon transistor; base current IB is rated 100 mA maximum and emitter-base breakdown VEBO is 5.0 V. |
| 2 | E | passive | Emitter terminal of the NPN silicon transistor; emitter-base reverse voltage VEBO is limited to 5.0 V. |
| 3 | Collector | passive | Collector terminal of the NPN silicon transistor; rated at 40 V VCBO, 20 V VCEO, 500 mA collector current and 450 mW collector power dissipation. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Foshan Blue Rocket Elec |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector to Base Voltage | VCBO | | | 40 | V | | 2 |
| Collector to Emitter Voltage | VCEO | | | 20 | V | | 2 |
| Emitter to Base Voltage | VEBO | | | 5 | V | | 2 |
| Collector Current | IC | | | 500 | mA | | 2 |
| Base Current | IB | | | 100 | mA | | 2 |
| Collector Power Dissipation | PC | | | 450 | mW | | 2 |
| Junction Temperature | Tj | | | 150 | ℃ | | 2 |
| Storage Temperature Range | Tstg | -55 | | 150 | ℃ | | 2 |
| Collector to Base Breakdown Voltage | VCBO | 40 | | | V | IC=0.1mA IE=0 | 2 |
| Collector to Emitter Breakdown Voltage | VCEO | 20 | | | V | IC=1.0mA IB=0 | 2 |
| Emitter to Base Breakdown Voltage | VEBO | 5 | | | V | IE=0.1mA IC=0 | 2 |
| Collector Cut-Off Current | ICBO | | | 0.1 | μA | VCB=25V IE=0 | 2 |
| Emitter Cut-Off Current | IEBO | | | 0.1 | μA | VEB=3.0V IC=0 | 2 |
| DC Current Gain hFE(1) | hFE(1) | 150 | 300 | | | VCE=1.0V IC=50mA | 2 |
| DC Current Gain hFE(2) | hFE(2) | 40 | | | | VCE=1.0V IC=500mA | 2 |
| Collector-Emitter Saturation Voltage | VCE(sat) | | 0.16 | 0.6 | V | IC=500mA IB=50mA | 2 |
| Base-Emitter Saturation Voltage | VBE(sat) | | 0.91 | 1.2 | V | IC=500mA IB=50mA | 2 |
| Base-Emitter Voltage | VBE | | 0.67 | 0.7 | V | VCE=1.0V IC=10mA | 2 |
## Materials and finish
As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| housing | PC | | Base Current IB 100 mA Collector Power Dissipation PC 450 mW | 2 |
## CAD (KiCad official)
- Symbol: `9013M`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `9013m-etched.step` / `9013m-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `9013m.step` / `9013m.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Foshan Blue Rocket Elec datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603095161325449216) (6 pp, sha256 `8f85f2a207349ac3`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/9013m-datasheet.pdf)