main
History Download
Ray Publish 0.1.0 e761bc4 11h ago

9013G

ST(Semtech) · Bipolar Transistors - BJT · TO-92

9013G from ST(Semtech), in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Emitter passive Emitter terminal of the NPN transistor; the emitter-base breakdown voltage V(BR)EBO is 5 V minimum and the absolute maximum emitter-base voltage VEBO is 5 V.
2 Base passive Base terminal of the NPN transistor; the base-emitter saturation voltage VBE(sat) is 1.2 V maximum at IC = 500 mA, IB = 50 mA.
3 Collector passive Collector terminal of the NPN transistor; the absolute maximum collector-emitter voltage VCEO is 30 V and collector current IC is 500 mA.

Key specifications

Parameter Value
Manufacturer ST(Semtech)
Package TO-92
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector Base Voltage VCBO 40 V 1
Collector Emitter Voltage VCEO 30 V 1
Emitter Base Voltage VEBO 5 V 1
Collector Current IC 500 mA 1
Power Dissipation Ptot 625 mW 1
Junction Temperature Tj 150 OC 1
Storage Temperature Range Tstg -55 150 OC 1
Thermal Resistance Junction to Ambient RθJA 200 /W 1
DC Current Gain Group G hFE 110 183 at VCE = 1 V, IC = 50 mA 2
DC Current Gain Group H hFE 177 250 at VCE = 1 V, IC = 50 mA 2
DC Current Gain Group I hFE 250 380 at VCE = 1 V, IC = 50 mA 2
DC Current Gain at 500 mA hFE 40 at VCE = 1 V, IC = 500 mA 2
Collector Base Cutoff Current ICBO 100 nA at VCB = 35 V 2
Emitter Base Cutoff Current IEBO 100 nA at VEB = 5 V 2
Collector Base Breakdown Voltage V(BR)CBO 40 V at IC = 100 μA 2
Collector Emitter Breakdown Voltage V(BR)CEO 30 V at IC = 1 mA 2
Emitter Base Breakdown Voltage V(BR)EBO 5 V at IE = 100 μA 2
Collector Emitter Saturation Voltage VCE(sat) 0.6 V at IC = 500 mA, IB = 50 mA 2
Base Emitter Saturation Voltage VBE(sat) 1.2 V at IC = 500 mA, IB = 50 mA 2
Base Emitter Voltage VBE 1 V at VCE = 1 V, IC = 100 mA 2
Gain Bandwidth Product fT 100 MHz at VCE = 6 V, IC = 20 mA 2

CAD (KiCad official)

  • Symbol: 9013G
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92 (KiCad packages3D, STEP)
  • 3D model files: 9013g-etched.step / 9013g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 9013g.step / 9013g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ST(Semtech) datasheet (5 pp, sha256 d4ffb493bea6fc02, retrieved 2026-11-02, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF