component
9013G
Public Made by Adomby adom
ST(Semtech) Bipolar Transistors - BJT, TO-92. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
9013G
ST(Semtech) · Bipolar Transistors - BJT · TO-92
9013G from ST(Semtech), in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Emitter | passive | Emitter terminal of the NPN transistor; the emitter-base breakdown voltage V(BR)EBO is 5 V minimum and the absolute maximum emitter-base voltage VEBO is 5 V. |
| 2 | Base | passive | Base terminal of the NPN transistor; the base-emitter saturation voltage VBE(sat) is 1.2 V maximum at IC = 500 mA, IB = 50 mA. |
| 3 | Collector | passive | Collector terminal of the NPN transistor; the absolute maximum collector-emitter voltage VCEO is 30 V and collector current IC is 500 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ST(Semtech) |
| Package | TO-92 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector Base Voltage | VCBO | 40 | V | 1 | |||
| Collector Emitter Voltage | VCEO | 30 | V | 1 | |||
| Emitter Base Voltage | VEBO | 5 | V | 1 | |||
| Collector Current | IC | 500 | mA | 1 | |||
| Power Dissipation | Ptot | 625 | mW | 1 | |||
| Junction Temperature | Tj | 150 | OC | 1 | |||
| Storage Temperature Range | Tstg | -55 | 150 | OC | 1 | ||
| Thermal Resistance Junction to Ambient | RθJA | 200 | /W | 1 | |||
| DC Current Gain Group G | hFE | 110 | 183 | at VCE = 1 V, IC = 50 mA | 2 | ||
| DC Current Gain Group H | hFE | 177 | 250 | at VCE = 1 V, IC = 50 mA | 2 | ||
| DC Current Gain Group I | hFE | 250 | 380 | at VCE = 1 V, IC = 50 mA | 2 | ||
| DC Current Gain at 500 mA | hFE | 40 | at VCE = 1 V, IC = 500 mA | 2 | |||
| Collector Base Cutoff Current | ICBO | 100 | nA | at VCB = 35 V | 2 | ||
| Emitter Base Cutoff Current | IEBO | 100 | nA | at VEB = 5 V | 2 | ||
| Collector Base Breakdown Voltage | V(BR)CBO | 40 | V | at IC = 100 μA | 2 | ||
| Collector Emitter Breakdown Voltage | V(BR)CEO | 30 | V | at IC = 1 mA | 2 | ||
| Emitter Base Breakdown Voltage | V(BR)EBO | 5 | V | at IE = 100 μA | 2 | ||
| Collector Emitter Saturation Voltage | VCE(sat) | 0.6 | V | at IC = 500 mA, IB = 50 mA | 2 | ||
| Base Emitter Saturation Voltage | VBE(sat) | 1.2 | V | at IC = 500 mA, IB = 50 mA | 2 | ||
| Base Emitter Voltage | VBE | 1 | V | at VCE = 1 V, IC = 100 mA | 2 | ||
| Gain Bandwidth Product | fT | 100 | MHz | at VCE = 6 V, IC = 20 mA | 2 |
CAD (KiCad official)
- Symbol:
9013G - Footprint:
Package_TO_SOT_THT:TO-92_Inline - 3D model: TO-92 (KiCad packages3D, STEP)
- 3D model files:
9013g-etched.step/9013g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);9013g.step/9013g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ST(Semtech) datasheet (5 pp, sha256
d4ffb493bea6fc02, retrieved 2026-11-02, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# 9013G
**ST(Semtech)** · Bipolar Transistors - BJT · TO-92
9013G from ST(Semtech), in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Emitter | passive | Emitter terminal of the NPN transistor; the emitter-base breakdown voltage V(BR)EBO is 5 V minimum and the absolute maximum emitter-base voltage VEBO is 5 V. |
| 2 | Base | passive | Base terminal of the NPN transistor; the base-emitter saturation voltage VBE(sat) is 1.2 V maximum at IC = 500 mA, IB = 50 mA. |
| 3 | Collector | passive | Collector terminal of the NPN transistor; the absolute maximum collector-emitter voltage VCEO is 30 V and collector current IC is 500 mA. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ST(Semtech) |
| Package | TO-92 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector Base Voltage | VCBO | | | 40 | V | | 1 |
| Collector Emitter Voltage | VCEO | | | 30 | V | | 1 |
| Emitter Base Voltage | VEBO | | | 5 | V | | 1 |
| Collector Current | IC | | | 500 | mA | | 1 |
| Power Dissipation | Ptot | | | 625 | mW | | 1 |
| Junction Temperature | Tj | | | 150 | OC | | 1 |
| Storage Temperature Range | Tstg | -55 | | 150 | OC | | 1 |
| Thermal Resistance Junction to Ambient | RθJA | | | 200 | /W | | 1 |
| DC Current Gain Group G | hFE | 110 | | 183 | | at VCE = 1 V, IC = 50 mA | 2 |
| DC Current Gain Group H | hFE | 177 | | 250 | | at VCE = 1 V, IC = 50 mA | 2 |
| DC Current Gain Group I | hFE | 250 | | 380 | | at VCE = 1 V, IC = 50 mA | 2 |
| DC Current Gain at 500 mA | hFE | 40 | | | | at VCE = 1 V, IC = 500 mA | 2 |
| Collector Base Cutoff Current | ICBO | | | 100 | nA | at VCB = 35 V | 2 |
| Emitter Base Cutoff Current | IEBO | | | 100 | nA | at VEB = 5 V | 2 |
| Collector Base Breakdown Voltage | V(BR)CBO | 40 | | | V | at IC = 100 μA | 2 |
| Collector Emitter Breakdown Voltage | V(BR)CEO | 30 | | | V | at IC = 1 mA | 2 |
| Emitter Base Breakdown Voltage | V(BR)EBO | 5 | | | V | at IE = 100 μA | 2 |
| Collector Emitter Saturation Voltage | VCE(sat) | | | 0.6 | V | at IC = 500 mA, IB = 50 mA | 2 |
| Base Emitter Saturation Voltage | VBE(sat) | | | 1.2 | V | at IC = 500 mA, IB = 50 mA | 2 |
| Base Emitter Voltage | VBE | | | 1 | V | at VCE = 1 V, IC = 100 mA | 2 |
| Gain Bandwidth Product | fT | 100 | | | MHz | at VCE = 6 V, IC = 20 mA | 2 |
## CAD (KiCad official)
- Symbol: `9013G`
- Footprint: `Package_TO_SOT_THT:TO-92_Inline`
- 3D model: TO-92 (KiCad packages3D, STEP)
- 3D model files: `9013g-etched.step` / `9013g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `9013g.step` / `9013g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [ST(Semtech) datasheet](docs/9013g-datasheet.pdf) (5 pp, sha256 `d4ffb493bea6fc02`, retrieved 2026-11-02, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/9013g-datasheet.pdf)