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9013-H

Public Made by Adom

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Foshan Blue Rocket Elec Bipolar (BJT), TO-92. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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9013-H

Foshan Blue Rocket Elec · Bipolar (BJT) · TO-92

9013-H from Foshan Blue Rocket Elec, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Collector passive Collector of the NPN transistor, rated for VCBO 40 V, VCEO 20 V, and continuous collector current IC 500 mA, with collector power dissipation PC 625 mW.
2 Base input Base of the NPN transistor, rated for continuous base current IB 100 mA, with VEBO 5.0 V as the emitter-to-base limit.
3 Emitter passive Emitter of the NPN transistor, with emitter-to-base voltage rating VEBO 5.0 V and collector-to-emitter saturation voltage VCE(sat) 0.6 V maximum at IC 500 mA, IB 50 mA.

Key specifications

Parameter Value
Manufacturer Foshan Blue Rocket Elec
Package TO-92
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector to Base Breakdown Voltage VCBO 40 V IC=0.1mA IE=0 2
Collector to Emitter Breakdown Voltage VCEO 20 V IC=1.0mA IB=0 2
Emitter to Base Breakdown Voltage VEBO 5 V IE=0.1mA IC=0 2
Collector Cut-Off Current ICBO 0.1 μA VCB=25V IE=0 2
Emitter Cut-Off Current IEBO 0.1 μA VEB=3.0V IC=0 2
DC Current Gain hFE(1) hFE(1) 64 276 VCE=1.0V IC=50mA 2
DC Current Gain hFE(2) hFE(2) 40 VCE=1.0V IC=500mA 2
Collector to Emitter Saturation Voltage VCE(sat) 0.16 0.6 V IC=500mA IB=50mA 2
Base to Emitter Saturation Voltage VBE(sat) 0.91 1.2 V IC=500mA IB=50mA 2
Base to Emitter Voltage VBE 0.67 0.7 V VCE=1.0V IC=10mA 2
Collector to Base Voltage VCBO 40 V 2
Collector to Emitter Voltage VCEO 20 V 2
Emitter to Base Voltage VEBO 5 V 2
Collector Current - Continuous IC 500 mA 2
Base Current - Continuous IB 100 mA 2
Collector Power Dissipation PC 625 mW 2
Junction Temperature Tj 150 ℃ 2
Storage Temperature Range Tstg -55 150 ℃ 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
housing PC TO-92 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92 Plastic Package. PC、IC大， hFE特性极好，与 9012 互补。 1

CAD (KiCad official)

  • Symbol: 9013-H
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92 (KiCad packages3D, STEP)
  • 3D model files: 9013-h-etched.step / 9013-h-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 9013-h.step / 9013-h.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Foshan Blue Rocket Elec datasheet (6 pp, sha256 a7bf46b9b9c7b225, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF