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8550SG-D-AE3-R

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UTC(Unisonic Tech) Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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8550SG-D-AE3-R

UTC(Unisonic Tech) · Bipolar (BJT) · SOT-23

8550SG-D-AE3-R from UTC(Unisonic Tech), in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B passive Base of the 8550S PNP transistor; the datasheet gives BVEBO of -5 V at IE=-100μA and VBE(SAT) of -1.2 V at IC=-500mA, IB=-50mA.
2 E passive Emitter of the 8550S PNP transistor; the datasheet gives emitter-base voltage VEBO of -5 V as an absolute maximum rating.
3 C passive Collector of the 8550S PNP transistor; absolute maximum ratings are VCBO -30 V, VCEO -20 V and IC -700 mA, with 350 mW collector dissipation at Ta=25°C in SOT-23.

Key specifications

Parameter Value
Manufacturer UTC(Unisonic Tech)
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Breakdown Voltage BVCBO -30 V IC=-100μA, IE=0 2
Collector-Emitter Breakdown Voltage BVCEO -20 V IC=-1mA, IB=0 2
Emitter-Base Breakdown Voltage BVEBO -5 V IE=-100μA, IC=0 2
Collector Cut-off Current ICBO -1 μA VCB=-30V, IE=0 2
Emitter Cut-off Current IEBO -100 nA VEB=-5V, IC=0 2
DC Current Gain (rank D) hFE1 100 VCE=-1V, IC=-1mA 2
DC Current Gain (rank D) hFE2 160 300 VCE=-1V, IC=-150mA 2
DC Current Gain hFE3 40 VCE=-1V, IC=-500mA 2
Collector-Emitter Saturation Voltage VCE(SAT) -0.5 V IC=-500mA, IB=-50mA 2
Base-Emitter Saturation Voltage VBE(SAT) -1.2 V IC=-500mA, IB=-50mA 2
Base-Emitter Voltage VBE -1 V VCE=-1V, IC=-10mA 2
Current Gain Bandwidth Product fT 100 MHz VCE=-10V, IC=-50mA 2
Output Capacitance Cob 9 pF VCB=-10V, IE=0, f=1MHz 2
Collector-Base Voltage VCBO -30 V 2
Collector-Emitter Voltage VCEO -20 V 2
Emitter-Base Voltage VEBO -5 V 2
Collector Current IC -700 mA 2
Collector Dissipation PC 350 mW Ta=25°C, SOT-23 package 2
Junction Temperature TJ 150 °C 2
Storage Temperature TSTG -40 150 °C 2

CAD (KiCad official)

  • Symbol: 8550SG-D-AE3-R
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: 8550sg-d-ae3-r-etched.step / 8550sg-d-ae3-r-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 8550sg-d-ae3-r.step / 8550sg-d-ae3-r.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UTC(Unisonic Tech) datasheet (4 pp, sha256 9710bbc589336262, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF