component
8550M-D
Public Made by Adomby adom
Foshan Blue Rocket Elec Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 24d ago |
| viewers | 24d ago |
| 8550m-d-etched.glb | 24d ago |
| 8550m-d-etched.step | 24d ago |
| 8550m-d-hero.glb | 24d ago |
| 8550m-d-hero.overlay.json | 24d ago |
| 8550m-d.glb | 24d ago |
| 8550m-d.kicad_mod | 24d ago |
| 8550m-d.kicad_sym | 24d ago |
| 8550m-d.lbr | 24d ago |
| 8550m-d.step | 24d ago |
| package.json | 24d ago |
| page.json | 17d ago |
| README.md | 17d ago |
8550M-D
Foshan Blue Rocket Elec · Bipolar (BJT) · SOT-23
8550M-D from Foshan Blue Rocket Elec, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | passive | Base terminal of the PNP transistor; the datasheet rates base current IB at -0.5 A maximum and emitter-base voltage VEBO at -6.0 V. |
| 2 | Emitter | passive | Emitter terminal of the PNP transistor; emitter-base breakdown voltage VEBO is -6.0 V minimum at IE = -0.1 mA. |
| 3 | Collector | passive | Collector terminal of the PNP transistor; the datasheet rates collector-emitter voltage VCEO at -25 V and collector current IC at -1.5 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Foshan Blue Rocket Elec |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector to Base Voltage | VCBO | -40 | V | 2 | |||
| Collector to Emitter Voltage | VCEO | -25 | V | 2 | |||
| Emitter to Base Voltage | VEBO | -6 | V | 2 | |||
| Collector Current | IC | -1.5 | A | 2 | |||
| Base Current | IB | -0.5 | A | 2 | |||
| Collector Power Dissipation | PC | 300 | mW | 2 | |||
| Junction Temperature | Tj | 150 | ℃ | 2 | |||
| Storage Temperature Range | Tstg | -55 | 150 | ℃ | 2 | ||
| Collector to Base Breakdown Voltage | VCBO | -40 | V | IC=-0.1mA IE=0 | 2 | ||
| Collector to Emitter Breakdown Voltage | VCEO | -25 | V | IC=-2.0mA IB=0 | 2 | ||
| Emitter to Base Breakdown Voltage | VEBO | -6 | V | IE=-0.1mA IC=0 | 2 | ||
| Collector Cut-Off Current | ICBO | -0.1 | μA | VCB=-35V IE=0 | 2 | ||
| Emitter Cut-Off Current | IEBO | -0.1 | μA | VEB=-6.0V IC=0 | 2 | ||
| DC Current Gain hFE(2) | hFE(2) | 40 | VCE=-1.0V IC=-800mA | 2 | |||
| DC Current Gain hFE(3) | hFE(3) | 45 | VCE=-1.0V IC=-5.0mA | 2 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.28 | -0.5 | V | IC=-800mA IB=-80mA | 2 | |
| Base-Emitter Saturation Voltage | VBE(sat) | -0.98 | -1.2 | V | IC=-800mA IB=-80mA | 2 | |
| Base-Emitter Voltage | VBE | -0.66 | -1 | V | VCE=-1.0V IC=-10mA | 2 | |
| Transition Frequency | fT | 100 | 200 | MHz | VCE=-10V IC=-50mA | 2 | |
| Collector Output Capacitance | Cob | 15 | pF | VCB=-10V IE=0 f=1.0MHz | 2 |
CAD (KiCad official)
- Symbol:
8550M-D - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
8550m-d-etched.step/8550m-d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);8550m-d.step/8550m-d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Foshan Blue Rocket Elec datasheet (6 pp, sha256
da6e603e24224851, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).