component

8550M-C

Public Made by Adom

by adom

Foshan Blue Rocket Elec Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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8550M-C

Foshan Blue Rocket Elec · Bipolar (BJT) · SOT-23

8550M-C from Foshan Blue Rocket Elec, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B passive Base terminal of the silicon PNP transistor; base current is rated at IB = -0.5 A maximum and emitter-to-base voltage at VEBO = -6.0 V.
2 Emitter passive Emitter terminal of the silicon PNP transistor; the device is rated for collector current IC = -1.5 A and collector-to-emitter voltage VCEO = -25 V.
3 C passive Collector terminal of the silicon PNP transistor; rated for collector-to-base voltage VCBO = -40 V and collector power dissipation PC = 625 mW.

Key specifications

Parameter Value
Manufacturer Foshan Blue Rocket Elec
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
DC current gain hFE(1) hFE(1) 85 300 VCE=-1.0V IC=-100mA 2
DC current gain hFE(2) hFE(2) 40 VCE=-1.0V IC=-800mA 2
DC current gain hFE(3) hFE(3) 45 VCE=-1.0V IC=-5.0mA 2
DC current gain hFE classification grade C hFE 120 200 1
Collector to Base Breakdown Voltage VCBO -40 V IC=-0.1mA IE=0 2
Collector to Emitter Breakdown Voltage VCEO -25 V IC=-2.0mA IB=0 2
Emitter to Base Breakdown Voltage VEBO -6 V IE=-0.1mA IC=0 2
Collector Cut-Off Current ICBO -0.1 μA VCB=-35V IE=0 2
Emitter Cut-Off Current IEBO -0.1 μA VEB=-6.0V IC=0 2
Collector-Emitter Saturation Voltage VCE(sat) -0.28 -0.5 V IC=-800mA IB=-80mA 2
Base-Emitter Saturation Voltage VBE(sat) -0.98 -1.2 V IC=-800mA IB=-80mA 2
Base-Emitter Voltage VBE -0.66 -1 V VCE=-1.0V IC=-10mA 2
Transition Frequency fT 100 200 MHz VCE=-10V IC=-50mA 2
Collector Output Capacitance Cob 15 pF VCB=-10V IE=0 f=1.0MHz 2
Collector to Base Voltage VCBO -40 V Ta=25℃ 2
Collector to Emitter Voltage VCEO -25 V Ta=25℃ 2
Emitter to Base Voltage VEBO -6 V Ta=25℃ 2
Collector Current IC -1.5 A Ta=25℃ 2
Base Current IB -0.5 A Ta=25℃ 2
Collector Power Dissipation PC 625 mW Ta=25℃ 2
Junction Temperature Tj 150 ℃ 2
Storage Temperature Range Tstg -55 150 ℃ 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
housing PC Base Current IB -0.5 A Collector Power Dissipation PC 625 mW 2

CAD (KiCad official)

  • Symbol: 8550M-C
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: 8550m-c-etched.step / 8550m-c-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 8550m-c.step / 8550m-c.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Foshan Blue Rocket Elec datasheet (6 pp, sha256 bafff80c47bc00d6, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF