component
8550D
Public Made by Adomby adom
ST Semtech Bipolar (BJT), TO-92-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown8550D
ST Semtech · Bipolar (BJT) · TO-92-3
8550D from ST Semtech, in a TO-92-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Emitter | passive | Emitter of the PNP transistor; the datasheet limits emitter-base voltage -VEBO to 6 V. |
| 2 | Base | passive | Base of the PNP transistor; the datasheet limits base-emitter saturation voltage VBE(sat) to 1.2 V max at -IC = 800 mA, -IB = 80 mA. |
| 3 | Collector | passive | Collector of the PNP transistor; the datasheet limits collector-base voltage -VCBO to 40 V, collector-emitter voltage -VCEO to 25 V, and collector current -IC to 1.5 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ST Semtech |
| Package | TO-92-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| DC Current Gain (5 mA) | hFE | 45 | at -VCE = 1 V, -IC = 5 mA | 1 | |||
| DC Current Gain Group D (100 mA) | hFE | 160 | 300 | at -VCE = 1 V, -IC = 100 mA, Current Gain Group D | 1 | ||
| DC Current Gain (800 mA) | hFE | 40 | at -VCE = 1 V, -IC = 800 mA | 1 | |||
| Collector Base Cutoff Current | -ICBO | 100 | nA | at -VCB = 35 V | 1 | ||
| Emitter Base Cutoff Current | -IEBO | 100 | nA | at -VBE = 6 V | 1 | ||
| Collector Base Breakdown Voltage | -V(BR)CBO | 40 | V | at -IC = 100 µA | 1 | ||
| Collector Emitter Breakdown Voltage | -V(BR)CEO | 25 | V | at -IC = 2 mA | 1 | ||
| Emitter Base Breakdown Voltage | -V(BR)EBO | 6 | V | at -IE = 100 µA | 1 | ||
| Collector Emitter Saturation Voltage | VCE(sat) | 0.5 | V | at -IC = 800 mA, -IB = 80 mA | 1 | ||
| Base Emitter Saturation Voltage | VBE(sat) | 1.2 | V | at -IC = 800 mA, -IB = 80 mA | 1 | ||
| Base Emitter Voltage | VBE | 1 | V | at -IC = 10 mA, -VCE = 1 V | 1 | ||
| Gain Bandwidth Product | fT | 120 | MHz | at -VCE = 10 V, -IC = 50 mA | 1 | ||
| Collector Base Voltage | -VCBO | 40 | V | 1 | |||
| Collector Emitter Voltage | -VCEO | 25 | V | 1 | |||
| Emitter Base Voltage | -VEBO | 6 | V | 1 | |||
| Collector Current | -IC | 1.5 | A | 1 | |||
| Power Dissipation | Ptot | 1 | W | 1 | |||
| Junction Temperature | Tj | 150 | °C | 1 | |||
| Storage Temperature Range | TStg | -55 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
8550D - Footprint:
Package_TO_SOT_THT:TO-92_Inline - 3D model: TO-92-3 (KiCad packages3D, STEP)
- 3D model files:
8550d-etched.step/8550d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);8550d.step/8550d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ST Semtech datasheet (2 pp, sha256
78f81639ca2f0029, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).