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8550-D

Public Made by Adom

by adom

Foshan Blue Rocket Elec Bipolar (BJT), TO-92. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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8550-D

Foshan Blue Rocket Elec · Bipolar (BJT) · TO-92

8550-D from Foshan Blue Rocket Elec, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Collector passive Collector terminal of the PNP transistor; the datasheet gives absolute maximum ratings of VCBO -40 V, VCEO -25 V, continuous IC -1.5 A (ICM -3 A for t≤1 ms) and PC 1.0 W.
2 Base passive Base terminal of the PNP transistor; the datasheet gives a maximum continuous base current IB of -0.5 A and VEBO of -6.0 V.
3 Emitter passive Emitter terminal of the PNP transistor; the emitter-to-base rating is VEBO -6.0 V.

Key specifications

Parameter Value
Manufacturer Foshan Blue Rocket Elec
Package TO-92
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector to Base Voltage VCBO -40 V 2
Collector to Emitter Voltage VCEO -25 V 2
Emitter to Base Voltage VEBO -6 V 2
Collector Current - Continuous IC -1.5 A 2
Collector Current - Peak ICM 3 A t≤1ms 2
Base Current - Continuous IB -0.5 A 2
Collector Power Dissipation PC 1 W 2
Junction Temperature Tj 150 ℃ 2
Storage Temperature Range Tstg -55 150 ℃ 2
Collector to Base Breakdown Voltage VCBO -40 V IC=-0.1mA IE=0 2
Collector to Emitter Breakdown Voltage VCEO -25 V IC=-2.0mA IB=0 2
Emitter to Base Breakdown Voltage VEBO -6 V IE=-0.1mA IC=0 2
Collector Cut-Off Current ICBO -0.1 μA VCB=-35V IE=0 2
Emitter Cut-Off Current IEBO -0.1 μA VEB=-6.0V IC=0 2
DC Current Gain hFE(1) 85 300 VCE=-1.0V IC=-100mA 2
DC Current Gain hFE(2) 40 VCE=-1.0V IC=-800mA 2
DC Current Gain hFE(3) 45 VCE=-1.0V IC=-5.0mA 2
Collector to Emitter Saturation Voltage VCE(sat) -0.28 -0.5 V IC=-800mA IB=-80mA 2
Base to Emitter Saturation Voltage VBE(sat) -0.98 -1.2 V IC=-800mA IB=-80mA 2
Base to Emitter Voltage VBE -0.66 -1 V VCE=-1.0V IC=-10mA 2
Transition Frequency fT 100 200 MHz VCE=-10V IC=-50mA 2
Collector Output Capacitance Cob 15 pF VCB=-10V IE=0 f=1.0MHz 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
housing PC TO-92 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-92 Plastic Package. PC,IC大,与 8050 互补。 1

CAD (KiCad official)

  • Symbol: 8550-D
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92 (KiCad packages3D, STEP)
  • 3D model files: 8550-d-etched.step / 8550-d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 8550-d.step / 8550-d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Foshan Blue Rocket Elec datasheet (6 pp, sha256 faa9f3e79f600704, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF