component
80N06
Public Made by Adomby adom
JUXING MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown80N06
JUXING · MOSFETs · TO-252
80N06 from JUXING, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V with threshold VGS(th) of 2.0 to 4.0 V at ID=250µA. |
| 2 | D | passive | Drain (also the exposed tab); VDS max 60 V, continuous ID 80 A and pulsed IDM 200 A. |
| 3 | S | passive | Source; continuous body-diode forward current IS is 60 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | JUXING |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 80 | A | 1 | |||
| Pulsed Drain Current | IDM | 200 | A | 1 | |||
| Power Dissipation | PD | 60 | W | 1 | |||
| Junction Temperature | Tj | -55 | 150 | ℃ | 1 | ||
| Storage Temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Drain-Source breakdown Voltage | V(BR)DSS | 60 | V | VGS=0V,ID=250µA | 2 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VDS=60V,VGS=0V TJ=25℃ | 2 | ||
| Gate-body leakage current | IGSS | -100 | 100 | nA | VDS=0V,VGS=±20V | 2 | |
| Gate-threshold voltage | VGS(th) | 2 | 4 | V | VDS=VGS,ID=250µA | 2 | |
| Static drain-source on-resistance | RDS(on) | 7 | 8 | mΩ | VGS=10V,ID=40A | 2 | |
| Static drain-source on-resistance | RDS(on) | 5.5 | 6 | mΩ | VGS=4.5V,ID=40A | 2 | |
| Forward Transconductance | gfs | 15 | S | VDS=10V,ID=40A | 2 | ||
| Drain-Source diode forward Voltage | VSD | 1.4 | V | VGS=0V,IS=45A | 2 | ||
| Continuous drain-source diode forward current | IS | 60 | A | 2 | |||
| Thermal Resistance From Junction To Ambient | RθJA | 62 | ℃/W | 1 | |||
| Thermal Resistance From Junction To Case | RθJC | 2.1 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
80N06 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
80n06-etched.step/80n06-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);80n06.step/80n06.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: JUXING datasheet (3 pp, sha256
0fcb1c4e80eb227a, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).