# 80N02

**GOODWORK** · MOSFETs · TO-252

80N02 from GOODWORK, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; the gate-source voltage is rated at ±20 V maximum with a threshold of 0.4 V min to 1.1 V max at VDS=VGS, ID=250 µA. |
| 2 | D | passive | Drain, which is also the exposed tab; drain-source voltage is rated at 20 V with a continuous drain current of 80 A at TC=25 °C. |
| 3 | S | passive | Source; the maximum continuous source-drain body diode forward current is 80 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | GOODWORK |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 20 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID@TC=25℃ |  |  | 80 | A | VGS @ 10V, TC=25℃ | 1 |
| Continuous Drain Current | ID@TC=100℃ |  |  | 35 | A | VGS @ 10V, TC=100℃ | 1 |
| Pulsed Drain Current | IDM |  |  | 200 | A |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 58 | mJ |  | 1 |
| Avalanche Current | IAS |  |  | 41 | A |  | 1 |
| Total Power Dissipation | PD@TC=25℃ |  |  | 58 | W | TC=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 125 | ℃ |  | 1 |
| Thermal Resistance Junction-Case | RθJC |  |  | 2.6 | ℃/W | Junction-Case | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 20 |  |  | V | VGS=0V, ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=20V, VGS=0V | 2 |
| Gate to Body Leakage Current | IGSS | -100 |  | 100 | nA | VDS=0V, VGS=±12V | 2 |
| Gate Threshold Voltage | VGS(th) | 0.4 | 0.7 | 1.1 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) |  | 3.5 | 5 | mΩ | VGS=4.5V, ID=30A | 2 |
| Static Drain-Source on-Resistance | RDS(on) |  | 6.5 | 9 | mΩ | VGS=2.5V, ID=20A | 2 |
| Maximum Continuous Drain to Source Diode Forward Current | IS |  |  | 80 | A |  | 2 |
| Maximum Pulsed Drain to Source Diode Forward Current | ISM |  |  | 300 | A |  | 2 |
| Drain to Source Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS = 0V, IS=30A | 2 |

## CAD (KiCad official)

- Symbol: `80N02`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `80n02-etched.step` / `80n02-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `80n02.step` / `80n02.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [GOODWORK datasheet](docs/80n02-datasheet.pdf) (6 pp, sha256 `04d6275ca2dfb3d6`, retrieved 2026-11-04, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/80n02-datasheet.pdf)