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8050T-D

Public Made by Adom

by adom

Foshan Blue Rocket Elec Bipolar Transistors - BJT, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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8050T-D

Foshan Blue Rocket Elec · Bipolar Transistors - BJT · SOT-89

8050T-D from Foshan Blue Rocket Elec, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Base input Base terminal (PIN1 per the datasheet pinning); the datasheet rates base continuous current IB at 0.5 A and emitter-to-base voltage VEBO at 6.0 V max.
2 Collector passive Collector terminal (PIN2 per the datasheet pinning); the datasheet rates collector-to-base voltage VCBO at 40 V, collector-to-emitter voltage VCEO at 25 V, continuous collector current IC at 1.5 A, and collector power dissipation PC at 625 mW.
3 Emitter passive Emitter terminal (PIN3 per the datasheet pinning); the datasheet rates emitter-to-base voltage VEBO at 6.0 V max.

Key specifications

Parameter Value
Manufacturer Foshan Blue Rocket Elec
Package SOT-89
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector to Base Breakdown Voltage VCBO 40 V IC=0.1mA IE=0 2
Collector to Emitter Breakdown Voltage VCEO 25 V IC=2.0mA IB=0 2
Emitter to Base Breakdown Voltage VEBO 6 V IE=0.1mA IC=0 2
Collector Cut-Off Current ICBO 0.1 μA VCB=35V IE=0 2
Emitter Base Cut-Off Current IEBO 0.1 μA VEB=6.0V IC=0 2
DC Current Gain hFE(1) 85 300 VCE=1.0V IC=100mA 2
DC Current Gain hFE(2) 40 VCE=1.0V IC=800mA 2
DC Current Gain hFE(3) 45 VCE=1.0V IC=5.0mA 2
DC Current Gain hFE classification D (marking HY1D) hFE 160 300 1
Collector to Emitter Saturation Voltage VCE(sat) 0.28 0.5 V IC=800mA IB=80mA 2
Emitter to Base Saturation Voltage VBE(sat) 0.98 1.2 V IC=800mA IB=80mA 2
Emitter to Base Voltage VBE 0.66 1 V VCE=1.0V IC=10mA 2
Transition Frequency fT 100 190 MHz VCE=10V IC=50mA 2
Collector to Base Voltage VCBO 40 V Ta=25℃ 2
Collector to Emitter Voltage VCEO 25 V Ta=25℃ 2
Emitter to Base Voltage VEBO 6 V Ta=25℃ 2
Collector Current - Continuous IC 1.5 A Ta=25℃ 2
Collector Base - Continuous IB 0.5 A Ta=25℃ 2
Collector Power Dissipation PC 625 mW Ta=25℃ 2
Junction Temperature Tj 150 ℃ Ta=25℃ 2
Storage Temperature Range Tstg -55 150 ℃ Ta=25℃ 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
housing PC Collector Base - Continuous IB 0.5 A Collector Power Dissipation PC 625 mW 2

CAD (KiCad official)

  • Symbol: 8050T-D
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: 8050t-d-etched.step / 8050t-d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 8050t-d.step / 8050t-d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Foshan Blue Rocket Elec datasheet (6 pp, sha256 4e0b89eb0424bd0f, retrieved 2026-10-25, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF