component
8050SS
Public Made by Adomby adom
Changjing Bipolar (BJT), TO-92. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 2h ago |
| viewers | 2h ago |
| 8050ss-etched.glb | 2h ago |
| 8050ss-etched.step | 2h ago |
| 8050ss-hero.glb | 2h ago |
| 8050ss-hero.overlay.json | 2h ago |
| 8050ss.glb | 2h ago |
| 8050ss.kicad_mod | 2h ago |
| 8050ss.kicad_sym | 2h ago |
| 8050ss.lbr | 2h ago |
| 8050ss.step | 2h ago |
| package.json | 2h ago |
| page.json | 2h ago |
| README.md | 2h ago |
8050SS
Changjing · Bipolar (BJT) · TO-92
8050SS from Changjing, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | EMITTER | passive | Emitter of the NPN transistor; VEBO max 5 V (V(BR)EBO min 5 V at IE=0.1 mA). |
| 2 | COLLECTOR | passive | Collector of the NPN transistor; VCBO 40 V, VCEO 25 V, IC max 1.5 A. |
| 3 | BASE | passive | Base of the NPN transistor; drives the device with hFE(1) of 85-300 at VCE=1 V, IC=100 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | TO-92 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | 40 | V | Ta=25℃ | 1 | ||
| Collector-Emitter Voltage | VCEO | 25 | V | Ta=25℃ | 1 | ||
| Emitter-Base Voltage | VEBO | 5 | V | Ta=25℃ | 1 | ||
| Collector Current | IC | 1.5 | A | Ta=25℃ | 1 | ||
| Collector Power Dissipation | PC | 1 | W | Ta=25℃ | 1 | ||
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance From Junction To Ambient | RθJA | 125 | ℃/W | 1 | |||
| Collector-base breakdown voltage | V(BR)CBO | 40 | V | IC=0.1mA, IE=0 | 2 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 25 | V | IC=0.1mA, IB=0 | 2 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 5 | V | IE=0.1mA, IC=0 | 2 | ||
| Collector cut-off current | ICBO | 0.1 | μA | VCB=40V, IE=0 | 2 | ||
| Emitter cut-off current | IEBO | 0.1 | μA | VEB=5V, IC=0 | 2 | ||
| DC current gain | hFE(1) | 85 | 300 | VCE=1V, IC=100mA | 2 | ||
| DC current gain | hFE(2) | 40 | VCE=1V, IC=800mA | 2 | |||
| Collector-emitter saturation voltage | VCE(sat) | 0.5 | V | IC=800mA, IB=80mA | 2 | ||
| Base-emitter saturation voltage | VBE(sat) | 1.2 | V | IC=800mA, IB=80mA | 2 | ||
| Base-emitter voltage | VBE | 1 | V | VCE=1V, IC=10mA | 2 | ||
| Collector output capacitance | Cob | 15 | pF | VCB=10V, IE=0, f=1MHz | 2 | ||
| Transition frequency | fT | 100 | MHz | VCE=10V, IC=50mA, f=30MHz | 2 |
CAD (KiCad official)
- Symbol:
8050SS - Footprint:
Package_TO_SOT_THT:TO-92_Inline - 3D model: TO-92 (KiCad packages3D, STEP)
- 3D model files:
8050ss-etched.step/8050ss-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);8050ss.step/8050ss.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (5 pp, sha256
af9604ae913bc7b9, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).