component
8050M-C
Public Made by Adomby adom
Foshan Blue Rocket Elec Bipolar Transistors - BJT, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdown8050M-C
Foshan Blue Rocket Elec · Bipolar Transistors - BJT · SOT-23
8050M-C from Foshan Blue Rocket Elec, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | input | Base of the NPN transistor; VEBO max 6 V, base current IB max 0.5 A. |
| 2 | Emitter | passive | Emitter of the NPN transistor; emitter-base voltage VEBO max 6 V. |
| 3 | Collector | passive | Collector of the NPN transistor; VCEO max 25 V, VCBO max 40 V, continuous IC max 1.5 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Foshan Blue Rocket Elec |
| Package | SOT-23 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector to Base Voltage | VCBO | 40 | V | 2 | |||
| Collector to Emitter Voltage | VCEO | 25 | V | 2 | |||
| Emitter to Base Voltage | VEBO | 6 | V | 2 | |||
| Collector Current - Continuous | IC | 1.5 | A | 2 | |||
| Base Current | IB | 0.5 | A | 2 | |||
| Collector Power Dissipation | PC | 625 | mW | Ta=25℃ | 2 | ||
| Junction Temperature | Tj | 150 | ℃ | 2 | |||
| Storage Temperature Range | Tstg | -55 | 150 | ℃ | 2 | ||
| Collector to Base Breakdown Voltage | VCBO | 40 | V | IC=0.1mA IE=0 | 2 | ||
| Collector to Emitter Breakdown Voltage | VCEO | 25 | V | IC=2.0mA IB=0 | 2 | ||
| Emitter to Base Breakdown Voltage | VEBO | 6 | V | IC=0.1mA IC=0 | 2 | ||
| Collector Cut-Off Current | ICBO | 0.1 | μA | VCB=35V IE=0 | 2 | ||
| Emitter Cut-Off Current | IEBO | 0.1 | μA | VEB=6.0V IC=0 | 2 | ||
| DC Current Gain | hFE(1) | 85 | 300 | VCE=1.0V IC=100mA | 2 | ||
| DC Current Gain, class C | hFE | 120 | 200 | hFE classification C (marking HY1C) | 1 | ||
| DC Current Gain | hFE(2) | 40 | VCE=1.0V IC=800mA | 2 | |||
| DC Current Gain | hFE(3) | 45 | VCE=1.0V IC=5.0mA | 2 | |||
| Collector to Emitter Saturation Voltage | VCE(sat) | 0.28 | 0.5 | V | IC=800mA IB=80mA | 2 | |
| Base to Emitter Voltage | VBE | 0.66 | 1 | V | VCE=1.0V IC=10mA | 2 | |
| Base to Emitter Saturation Voltage | VBE(sat) | 0.98 | 1.2 | V | IC=800mA IB=80mA | 2 | |
| Transition Frequency | fT | 100 | 190 | MHz | IC=50mA VCE=10V | 2 | |
| Collector output capacitance | Cob | 9 | pF | VCB=10V IE=0 f=1.0MHz | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| housing | PC | Base Current IB 0.5 A Collector Power Dissipation PC 625 mW | 2 |
CAD (KiCad official)
- Symbol:
8050M-C - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
8050m-c-etched.step/8050m-c-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);8050m-c.step/8050m-c.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Foshan Blue Rocket Elec datasheet (6 pp, sha256
27783a94ed3237cf, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).