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7NM65G-TN3-R

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UTC(Unisonic Tech) MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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7NM65G-TN3-R

UTC(Unisonic Tech) · MOSFETs · TO-252

7NM65G-TN3-R from UTC(Unisonic Tech), in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; the gate-source voltage VGSS is rated ±30 V (absolute maximum ratings, TC = 25°C).
2 D passive Drain terminal; the drain-source voltage VDSS is rated 650 V and the continuous drain current ID is rated 7 A.
3 S passive Source terminal; the maximum continuous drain-source diode forward current IS is rated 7 A.

Key specifications

Parameter Value
Manufacturer UTC(Unisonic Tech)
Package TO-252
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 650 V VGS = 0V, ID = 250μA; TJ = 25°C 4
Drain-Source Leakage Current IDSS 1 μA VDS = 650V, VGS = 0V; TJ = 25°C 4
Gate-Source Leakage Current, Forward IGSS 100 nA VGS = 30V, VDS = 0V; TJ = 25°C 4
Gate-Source Leakage Current, Reverse IGSS -100 nA VGS = -30V, VDS = 0V; TJ = 25°C 4
Gate Threshold Voltage VGS(TH) 2.5 4.5 V VDS = VGS, ID = 250μA; TJ = 25°C 4
Static Drain-Source On-State Resistance RDS(ON) 0.9 Ω VGS = 10V, ID = 3.5A; TJ = 25°C 4
Drain-Source Voltage VDSS 650 V TC = 25°C 3
Gate-Source Voltage VGSS -30 30 V TC = 25°C 3
Continuous Drain Current ID 7 A TC = 25°C 3
Pulsed Drain Current IDM 28 A Pulse width limited by maximum junction temperature (Note 2) 3
Avalanche Current IAR 1.7 A Repetitive rating (Note 2) 3
Avalanche Energy Single Pulsed EAS 208 mJ L = 144 mH, IAS = 1.7A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C (Note 3) 3
Peak Diode Recovery dv/dt dv/dt 4 V/ns ISD≤7.0A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C (Note 4) 3
Power Dissipation (TO-252) PD 60 W TO-252 (printed in the group with TO-251/TO-251S2) 3
Junction Temperature TJ 150 °C 3
Storage Temperature TSTG -55 150 °C 3
Maximum Continuous Drain-Source Diode Forward Current IS 7 A 4
Maximum Pulsed Drain-Source Diode Forward Current ISM 28 A 4
Junction to Ambient (TO-252) θJA 110 °C/W TO-252 (printed in the group with TO-251/TO-251S2) 3
Junction to Case (TO-252) θJC 2.08 °C/W TO-252 (printed in the group with TO-251/TO-251S2) 3

CAD (KiCad official)

  • Symbol: 7NM65G-TN3-R
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: 7nm65g-tn3-r-etched.step / 7nm65g-tn3-r-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 7nm65g-tn3-r.step / 7nm65g-tn3-r.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UTC(Unisonic Tech) datasheet (7 pp, sha256 83567ede5fd91995, retrieved 2026-10-28, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF