component
7N70G-TC-TN3-R
Public Made by Adomby adom
UTC Unisonic Tech MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown7N70G-TC-TN3-R
UTC Unisonic Tech · MOSFETs · TO-252
7N70G-TC-TN3-R from UTC Unisonic Tech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate of the N-channel power MOSFET; gate-source voltage is rated ±30 V (VGSS). |
| 2 | Drain | passive | Drain of the 7 A, 700 V N-channel MOSFET (VDSS 700 V, continuous drain current ID 7 A). |
| 3 | Source | passive | Source of the MOSFET; body-diode maximum continuous current IS is 7 A and pulsed current ISM is 28 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC Unisonic Tech |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 700 | V | VGS=0V, ID= 250μA | 4 | ||
| Drain-Source Leakage Current | IDSS | 10 | µA | VDS=700V, VGS=0V | 4 | ||
| Gate-Source Leakage Current Forward | IGSS | 100 | nA | VGS=30V, VDS=0V | 4 | ||
| Gate-Source Leakage Current Reverse | IGSS | -100 | nA | VGS=-30V, VDS=0V | 4 | ||
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | VDS=VGS, ID=250μA | 4 | |
| Static Drain-Source On-State Resistance | RDS(ON) | 1.7 | Ω | VGS=10V, ID=3.5A | 4 | ||
| Drain-Source Voltage | VDSS | 700 | V | 3 | |||
| Gate-Source Voltage | VGSS | -30 | 30 | V | 3 | ||
| Drain Current Continuous | ID | 7 | A | 3 | |||
| Drain Current Pulsed | IDM | 14 | A | Pulsed (Note 2) | 3 | ||
| Avalanche Energy Single Pulsed | EAS | 80 | mJ | Single Pulsed (Note 3): L=10mH, IAS=4.0A, VDD=50V, RG=25Ω, TJ=25°C | 3 | ||
| Peak Diode Recovery dv/dt | dv/dt | 3.2 | V/ns | Note 4: ISD ≤ 7.0A, di/dt ≤200A/μs, VDD ≤BVDSS, TJ=25°C | 3 | ||
| Power Dissipation TO-252 | PD | 57 | W | TO-252 | 3 | ||
| Junction Temperature | TJ | 150 | °C | 3 | |||
| Storage Temperature | TSTG | -55 | 150 | °C | 3 | ||
| Maximum Body-Diode Continuous Current | IS | 7 | A | 4 | |||
| Maximum Body-Diode Pulsed Current | ISM | 28 | A | 4 | |||
| Junction to Ambient, TO-252 | θJA | 110 | °C/W | Junction to Ambient, TO-252 | 3 | ||
| Junction to Case, TO-252 | θJC | 2.08 | °C/W | Junction to Case, TO-252 | 3 |
CAD (KiCad official)
- Symbol:
7N70G-TC-TN3-R - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
7n70g-tc-tn3-r-etched.step/7n70g-tc-tn3-r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);7n70g-tc-tn3-r.step/7n70g-tc-tn3-r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UTC Unisonic Tech datasheet (9 pp, sha256
90bacd54bf100d0e, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).