component
7N65KL-MTQ-TM3-T
Public Made by Adomby adom
UTC(Unisonic Tech) MOSFETs, TO-251. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdown7N65KL-MTQ-TM3-T
UTC(Unisonic Tech) · MOSFETs · TO-251
7N65KL-MTQ-TM3-T from UTC(Unisonic Tech), in a TO-251. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET; the absolute maximum gate-source voltage VGSS is rated ±30 V. |
| 2 | Drain | passive | Drain terminal of the N-channel MOSFET; the drain-source voltage VDSS is rated 650 V. |
| 3 | Source | passive | Source terminal of the N-channel MOSFET; the datasheet gives no separate limit for this pin. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC(Unisonic Tech) |
| Package | TO-251 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGSS | -30 | 30 | V | 3 | ||
| Operating Temperature | TOPR | -55 | 150 | °C | 3 | ||
| Storage Temperature | TSTG | -55 | 150 | °C | 3 | ||
| Junction Temperature | TJ | 150 | °C | 3 | |||
| Drain-Source Voltage | VDSS | 650 | V | 3 | |||
| Continuous Drain Current | ID | 7 | A | 3 | |||
| Pulsed Drain Current | IDM | 24 | A | Note 2 | 3 | ||
| Avalanche Current | IAR | 7 | A | Note 2 | 3 | ||
| Avalanche Energy, Repetitive | EAR | 2 | mJ | Limited by TJMAX | 3 | ||
| Avalanche Energy Single Pulsed | EAS | 350 | mJ | Note 3 | 3 | ||
| Peak Diode Recovery dv/dt | dv/dt | 4.5 | V/ns | Note 4 | 3 | ||
| Power Dissipation TO-251/TO-252 | PD | 55 | W | TO-251/TO-252 | 3 | ||
| Drain-Source Breakdown Voltage | BVDSS | 650 | V | VGS = 0V, ID = 250μA | 4 | ||
| Drain-Source Leakage Current | IDSS | 10 | μA | VDS = 650V, VGS = 0V | 4 | ||
| Gate-Source Leakage Current Forward | IGSS | 100 | nA | VGS = 30V, VDS = 0V | 4 | ||
| Gate-Source Leakage Current Reverse | IGSS | -100 | nA | VGS = -30V, VDS = 0V | 4 | ||
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | VDS = VGS, ID = 250μA | 4 | |
| Static Drain-Source On-State Resistance | RDS(ON) | 1.6 | Ω | VGS = 10V, ID = 3.5A | 4 | ||
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | VGS = 0 V, IS = 7 A | 4 | ||
| Maximum Continuous Drain-Source Diode Forward Current | IS | 7 | A | 4 | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 28 | A | 4 | |||
| Breakdown Voltage Temperature Coefficient | △ BVDSS/△TJ | 0.53 | V/°C | ID=250μA, Referenced to 25°C | 4 | ||
| Input Capacitance | CISS | 980 | pF | VDS=25V, VGS=0V, f=1.0 MHz | 4 | ||
| Output Capacitance | COSS | 90 | pF | VDS=25V, VGS=0V, f=1.0 MHz | 4 | ||
| Reverse Transfer Capacitance | CRSS | 5 | pF | VDS=25V, VGS=0V, f=1.0 MHz | 4 | ||
| Total Gate Charge | QG | 24.1 | nC | VDS=200V, ID=7.0A, VGS=10V, IG=3mA (Note 1, 2) | 4 | ||
| Gate-Source Charge | QGS | 7.2 | nC | VDS=200V, ID=7.0A, VGS=10V, IG=3mA (Note 1, 2) | 4 | ||
| Gate-Drain Charge | QGD | 6 | nC | VDS=200V, ID=7.0A, VGS=10V, IG=3mA (Note 1, 2) | 4 | ||
| Turn-On Delay Time | tD(ON) | 50 | ns | VDD=30V, ID=0.5A, VGS=10V, RG=25Ω (Note 1, 2) | 4 | ||
| Turn-On Rise Time | tR | 65 | ns | VDD=30V, ID=0.5A, VGS=10V, RG=25Ω (Note 1, 2) | 4 | ||
| Turn-Off Delay Time | tD(OFF) | 110 | ns | VDD=30V, ID=0.5A, VGS=10V, RG=25Ω (Note 1, 2) | 4 | ||
| Turn-Off Fall Time | tF | 55 | ns | VDD=30V, ID=0.5A, VGS=10V, RG=25Ω (Note 1, 2) | 4 | ||
| Body Diode Reverse Recovery Time | trr | 320 | ns | IS=7A, di/dt=100A/μs | 4 | ||
| Body Diode Reverse Recovery Charge | Qrr | 2.4 | nC | IS=7A, di/dt=100A/μs | 4 | ||
| Junction to Ambient TO-251/TO-252 | θJA | 110 | °C/W | TO-251/TO-252 | 3 | ||
| Junction to Case TO-251/TO-252 | θJC | 2.27 | °C/W | TO-251/TO-252, Note: device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate | 3 |
CAD (KiCad official)
- Symbol:
7N65KL-MTQ-TM3-T - Footprint:
Package_TO_SOT_THT:TO-251-3_Vertical - 3D model: TO-251 (KiCad packages3D, STEP)
- 3D model files:
7n65kl-mtq-tm3-t-etched.step/7n65kl-mtq-tm3-t-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);7n65kl-mtq-tm3-t.step/7n65kl-mtq-tm3-t.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UTC(Unisonic Tech) datasheet (9 pp, sha256
ecda15d8fbe37f6d, retrieved 2026-10-27, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusoff(skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).