component
7N65G-TN3-R
Public Made by Adomby adom
UTC(Unisonic Tech) MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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7N65G-TN3-R
UTC(Unisonic Tech) · MOSFETs · TO-252
7N65G-TN3-R from UTC(Unisonic Tech), in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel power MOSFET, with a maximum gate-source voltage of ±30 V and a gate threshold of 2.0 to 4.0 V. |
| 2 | D | passive | Drain of the N-channel power MOSFET, rated for VDSS of 650 V and continuous drain current of 7 A. |
| 3 | S | passive | Source of the N-channel power MOSFET, with a continuous body-diode forward current of 7 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC(Unisonic Tech) |
| Package | TO-252 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 650 | V | VGS=0V, ID=250μA | 4 | ||
| Drain-Source Leakage Current | IDSS | 10 | µA | VDS=650V, VGS=0V | 4 | ||
| Gate-Source Leakage Current Forward | IGSS | 100 | nA | VGS=30V, VDS=0V | 4 | ||
| Gate-Source Leakage Current Reverse | IGSS | -100 | nA | VGS=-30V, VDS=0V | 4 | ||
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | VDS=VGS, ID=250μA | 4 | |
| Static Drain-Source On-State Resistance | RDS(ON) | 1.4 | Ω | VGS=10V, ID=3.5A | 4 | ||
| Maximum Continuous Drain-Source Diode Forward Current | IS | 7 | A | 4 | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 14 | A | 4 | |||
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | VGS=0V, IS=7.0A | 4 | ||
| Drain-Source Voltage | VDSS | 650 | V | TC=25°C | 3 | ||
| Gate-Source Voltage | VGSS | -30 | 30 | V | TC=25°C | 3 | |
| Drain Current Continuous | ID | 7 | A | TC=25°C | 3 | ||
| Drain Current Pulsed | IDM | 14 | A | TC=25°C, Note 2 | 3 | ||
| Avalanche Energy Single Pulsed | EAS | 700 | mJ | L=100mH, VDD=50V, RG=25Ω, Starting TJ=25°C | 3 | ||
| Peak Diode Recovery dv/dt | dv/dt | 3.3 | V/ns | ISD ≤ 7.0A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ = 25°C | 3 | ||
| Power Dissipation TO-251/TO-252 | PD | 55 | W | TC=25°C | 3 | ||
| Junction Temperature | TJ | 150 | °C | 3 | |||
| Storage Temperature | TSTG | -55 | 150 | °C | 3 | ||
| Thermal Resistance Junction to Ambient TO-251/TO-252 | θJA | 110 | °C/W | 3 | |||
| Thermal Resistance Junction to Case TO-251/TO-252 | θJC | 2.27 | °C/W | 3 | |||
| Input Capacitance | CISS | 990 | pF | VGS=0V, VDS=25V, f=1.0 MHz | 4 | ||
| Output Capacitance | COSS | 96 | pF | VGS=0V, VDS=25V, f=1.0 MHz | 4 | ||
| Reverse Transfer Capacitance | CRSS | 4.2 | pF | VGS=0V, VDS=25V, f=1.0 MHz | 4 | ||
| Total Gate Charge | QG | 23 | nC | VDS=520V, VGS=10V, ID=7.0A, IG=100µA | 4 | ||
| Gate-Source Charge | QGS | 8.4 | nC | VDS=520V, VGS=10V, ID=7.0A, IG=100µA | 4 | ||
| Gate-Drain Charge | QGD | 4.6 | nC | VDS=520V, VGS=10V, ID=7.0A, IG=100µA | 4 | ||
| Turn-on Delay Time | tD(ON) | 12 | ns | VDS=100V, VGS=10V, ID=7.0A, RG=25Ω | 4 | ||
| Rise Time | tR | 17.5 | ns | VDS=100V, VGS=10V, ID=7.0A, RG=25Ω | 4 | ||
| Turn-off Delay Time | tD(OFF) | 60 | ns | VDS=100V, VGS=10V, ID=7.0A, RG=25Ω | 4 | ||
| Fall Time | tF | 27 | ns | VDS=100V, VGS=10V, ID=7.0A, RG=25Ω | 4 | ||
| Reverse Recovery Time | trr | 424 | ns | VGS=0V, IS=7.0A, dIF/dt=100A/µs | 4 | ||
| Reverse Recovery Charge | Qrr | 3.2 | µC | VGS=0V, IS=7.0A, dIF/dt=100A/µs | 4 |
CAD (KiCad official)
- Symbol:
7N65G-TN3-R - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
7n65g-tn3-r-etched.step/7n65g-tn3-r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);7n65g-tn3-r.step/7n65g-tn3-r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UTC(Unisonic Tech) datasheet (9 pp, sha256
181243d23f4069df, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# 7N65G-TN3-R
**UTC(Unisonic Tech)** · MOSFETs · TO-252
7N65G-TN3-R from UTC(Unisonic Tech), in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel power MOSFET, with a maximum gate-source voltage of ±30 V and a gate threshold of 2.0 to 4.0 V. |
| 2 | D | passive | Drain of the N-channel power MOSFET, rated for VDSS of 650 V and continuous drain current of 7 A. |
| 3 | S | passive | Source of the N-channel power MOSFET, with a continuous body-diode forward current of 7 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC(Unisonic Tech) |
| Package | TO-252 |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 650 | | | V | VGS=0V, ID=250μA | 4 |
| Drain-Source Leakage Current | IDSS | | | 10 | µA | VDS=650V, VGS=0V | 4 |
| Gate-Source Leakage Current Forward | IGSS | | | 100 | nA | VGS=30V, VDS=0V | 4 |
| Gate-Source Leakage Current Reverse | IGSS | -100 | | | nA | VGS=-30V, VDS=0V | 4 |
| Gate Threshold Voltage | VGS(TH) | 2 | | 4 | V | VDS=VGS, ID=250μA | 4 |
| Static Drain-Source On-State Resistance | RDS(ON) | | | 1.4 | Ω | VGS=10V, ID=3.5A | 4 |
| Maximum Continuous Drain-Source Diode Forward Current | IS | | | 7 | A | | 4 |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | | | 14 | A | | 4 |
| Drain-Source Diode Forward Voltage | VSD | | | 1.4 | V | VGS=0V, IS=7.0A | 4 |
| Drain-Source Voltage | VDSS | | | 650 | V | TC=25°C | 3 |
| Gate-Source Voltage | VGSS | -30 | | 30 | V | TC=25°C | 3 |
| Drain Current Continuous | ID | | | 7 | A | TC=25°C | 3 |
| Drain Current Pulsed | IDM | | | 14 | A | TC=25°C, Note 2 | 3 |
| Avalanche Energy Single Pulsed | EAS | | | 700 | mJ | L=100mH, VDD=50V, RG=25Ω, Starting TJ=25°C | 3 |
| Peak Diode Recovery dv/dt | dv/dt | | | 3.3 | V/ns | ISD ≤ 7.0A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ = 25°C | 3 |
| Power Dissipation TO-251/TO-252 | PD | | | 55 | W | TC=25°C | 3 |
| Junction Temperature | TJ | | | 150 | °C | | 3 |
| Storage Temperature | TSTG | -55 | | 150 | °C | | 3 |
| Thermal Resistance Junction to Ambient TO-251/TO-252 | θJA | | | 110 | °C/W | | 3 |
| Thermal Resistance Junction to Case TO-251/TO-252 | θJC | | | 2.27 | °C/W | | 3 |
| Input Capacitance | CISS | | 990 | | pF | VGS=0V, VDS=25V, f=1.0 MHz | 4 |
| Output Capacitance | COSS | | 96 | | pF | VGS=0V, VDS=25V, f=1.0 MHz | 4 |
| Reverse Transfer Capacitance | CRSS | | 4.2 | | pF | VGS=0V, VDS=25V, f=1.0 MHz | 4 |
| Total Gate Charge | QG | | 23 | | nC | VDS=520V, VGS=10V, ID=7.0A, IG=100µA | 4 |
| Gate-Source Charge | QGS | | 8.4 | | nC | VDS=520V, VGS=10V, ID=7.0A, IG=100µA | 4 |
| Gate-Drain Charge | QGD | | 4.6 | | nC | VDS=520V, VGS=10V, ID=7.0A, IG=100µA | 4 |
| Turn-on Delay Time | tD(ON) | | 12 | | ns | VDS=100V, VGS=10V, ID=7.0A, RG=25Ω | 4 |
| Rise Time | tR | | 17.5 | | ns | VDS=100V, VGS=10V, ID=7.0A, RG=25Ω | 4 |
| Turn-off Delay Time | tD(OFF) | | 60 | | ns | VDS=100V, VGS=10V, ID=7.0A, RG=25Ω | 4 |
| Fall Time | tF | | 27 | | ns | VDS=100V, VGS=10V, ID=7.0A, RG=25Ω | 4 |
| Reverse Recovery Time | trr | | 424 | | ns | VGS=0V, IS=7.0A, dIF/dt=100A/µs | 4 |
| Reverse Recovery Charge | Qrr | | 3.2 | | µC | VGS=0V, IS=7.0A, dIF/dt=100A/µs | 4 |
## CAD (KiCad official)
- Symbol: `7N65G-TN3-R`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `7n65g-tn3-r-etched.step` / `7n65g-tn3-r-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `7n65g-tn3-r.step` / `7n65g-tn3-r.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [UTC(Unisonic Tech) datasheet](docs/7n65g-tn3-r-datasheet.pdf) (9 pp, sha256 `181243d23f4069df`, retrieved 2026-10-22, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/7n65g-tn3-r-datasheet.pdf)