7N65G-TC-TM3-T from UTC(Unisonic Tech), in a TO-251. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	G	input	Gate of the MOSFET; the gate-source voltage is rated at ±30 V (VGSS), and the gate threshold is 2.0 to 4.0 V at ID = 250 µA.
2	D	passive	Drain of the MOSFET, rated for a drain-source voltage of 650 V (VDSS) and a continuous drain current of 7 A.
3	S	passive	Source of the MOSFET, the reference terminal for the gate-source voltage; the body diode continuous forward current is rated at 7 A.

Key specifications

Parameter	Value
Manufacturer	UTC(Unisonic Tech)
Package	TO-251
Category	Transistors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Voltage	VDSS			650	V	TC = 25°C	3
Gate-Source Voltage	VGSS	-30		30	V	TC = 25°C	3
Drain Current Continuous	ID			7	A	TC = 25°C	3
Drain Current Pulsed	IDM			14	A	TC = 25°C	3
Avalanche Energy Single Pulsed	EAS			700	mJ	TC = 25°C	3
Peak Diode Recovery dv/dt	dv/dt			3.3	V/ns	TC = 25°C	3
Power Dissipation TO-251/TO-252	PD			55	W	TO-251/TO-252	3
Junction Temperature	TJ			150	°C		3
Storage Temperature	TSTG	-55		150	°C		3
Junction to Ambient TO-251/TO-252	θJA		110		°C/W	TO-251/TO-252	3
Junction to Case TO-251/TO-252	θJC		2.27		°C/W	TO-251/TO-252	3
Drain-Source Breakdown Voltage	BVDSS	650			V	VGS=0V, ID= 250μA	4
Drain-Source Leakage Current	IDSS			10	µA	VDS=650V, VGS=0V	4
Gate-Source Leakage Current Forward	IGSS			100	nA	VGS=30V, VDS=0V	4
Gate-Source Leakage Current Reverse	IGSS	-100			nA	VGS=-30V, VDS=0V	4
Gate Threshold Voltage	VGS(TH)	2		4	V	VDS=VGS, ID=250μA	4
Static Drain-Source On-State Resistance	RDS(ON)			1.4	Ω	VGS=10V, ID=3.5A	4
Drain-Source Diode Forward Voltage	VSD			1.4	V	VGS=0V, IS=7.0A	4
Maximum Continuous Drain-Source Diode Forward Current	IS			7	A		4
Maximum Pulsed Drain-Source Diode Forward Current	ISM			14	A		4
Input Capacitance	CISS		990		pF	VGS=0V, VDS=25V, f=1.0 MHz	4
Output Capacitance	COSS		96		pF	VGS=0V, VDS=25V, f=1.0 MHz	4
Reverse Transfer Capacitance	CRSS		4.2		pF	VGS=0V, VDS=25V, f=1.0 MHz	4
Total Gate Charge	QG		23		nC	VDS=520V, VGS=10V, ID=7.0A, IG=100µA (Note 1, 2)	4
Gate-Source Charge	QGS		8.4		nC		4
Gate-Drain Charge	QGD		4.6		nC		4
Turn-on Delay Time	tD(ON)		12		ns	VDS=100V, VGS=10V, ID=7.0A, RG=25Ω (Note 1, 2)	4
Rise Time	tR		17.5		ns		4
Turn-off Delay Time	tD(OFF)		60		ns		4
Fall-Time	tF		27		ns		4
Reverse Recovery Time	trr		424		ns	VGS=0V, IS=7.0A, dIF/dt=100A/µs (Note1)	4
Reverse Recovery Charge	Qrr		3.2		µC		4

CAD (KiCad official)

Symbol: 7N65G-TC-TM3-T
Footprint: Package_TO_SOT_THT:TO-251-3_Vertical
3D model: TO-251 (KiCad packages3D, STEP)
3D model files: 7n65g-tc-tm3-t-etched.step / 7n65g-tc-tm3-t-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 7n65g-tc-tm3-t.step / 7n65g-tc-tm3-t.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: UTC(Unisonic Tech) datasheet (9 pp, sha256 181243d23f4069df, retrieved 2026-11-07, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

7N65G-TC-TM3-T

Verified 7N65G-TC-TM3-T

Verification log 1 record

3D Model

Symbol & Footprint

Schematic Symbol

PCB Footprint

Datasheet

README