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7N65F

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GOODWORK MOSFETs, ITO-220AB-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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7N65F

GOODWORK · MOSFETs · ITO-220AB-3

7N65F from GOODWORK, in a ITO-220AB-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel enhancement-mode MOSFET, rated for a gate-source voltage VGSS of ±30 V.
2 Drain passive Drain terminal, rated for a drain-source voltage VDSS of 650 V and a continuous drain current ID of 7 A at TC = 25°C.
3 Source passive Source terminal, the reference for the gate-source rating (±30 V) and the drain-source diode ratings given in the datasheet.

Key specifications

Parameter Value
Manufacturer GOODWORK
Package ITO-220AB-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 650 V TC = 25°C 1
Gate-Source Voltage VGSS -30 30 V TC = 25°C; printed ±30 V 1
Avalanche Current (Note 2) IAR 7 A TC = 25°C 1
Drain Current Continuous ID 7 A TC = 25°C 1
Pulsed Drain Current (Note 2) IDM 29.6 A TC = 25°C; Note 2 repetitive rating 1
Avalanche Energy Single Pulsed (Note 3) EAS 530 mJ L = 19.5mH, IAS = 7A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 1
Avalanche Energy Repetitive (Note 2) EAR 14.2 mJ Note 2 repetitive rating 1
Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns ISD≤7A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C 1
Power Dissipation PD 48 W TC = 25°C 1
Junction Temperature TJ 150 °C 1
Storage Temperature TSTG -55 150 °C 1
Drain-Source Breakdown Voltage BVDSS 650 V VGS = 0V, ID = 250μA 2
Drain-Source Leakage Current IDSS 1 μA VDS = 650V, VGS = 0V 2
Gate-Source Leakage Current Forward IGSS 100 nA VGS = 30V, VDS = 0V 2
Gate-Source Leakage Current Reverse IGSS -100 nA VGS = -30V, VDS = 0V 2
Gate Threshold Voltage VGS(TH) 2 4 V VDS = VGS, ID = 250μA 2
Static Drain-Source On-State Resistance RDS(ON) 1.18 1.67 Ω VGS = 10V, ID = 3.5A 2
Maximum Continuous Drain-Source Diode Forward Current IS 7 A 2
Drain-Source Diode Forward Voltage VSD 1.4 V VGS = 0V, IS = 7A 2
Maximum Pulsed Drain-Source Diode Forward Current ISM 29.6 A 2
Reverse Transfer Capacitance CRSS 16 21 pF 2
Total Gate Charge QG 29 38 nC VDS=520V, VGS=10 V (Note 1, 2) 2
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ 0.67 V/°C ID=250μA, referenced to 25°C 2
Input Capacitance CISS 1400 pF VDS=25V, VGS=0V, f=1.0 MHz 2
Output Capacitance COSS 180 pF 2
Turn-On Delay Time tD(ON) 70 ns VDD =325V, ID =7.4A, RG =25Ω (Note 1, 2) 2
Turn-On Rise Time tR 170 ns 2
Turn-Off Delay Time tD(OFF) 140 ns 2
Turn-Off Fall Time tF 130 ns 2
Gate-Source Charge QGS 7 nC 2
Gate-Drain Charge QGD 14.5 nC 2
Reverse Recovery Time trr 320 ns VGS = 0V, IS = 7A, dIF / dt = 100A/μs (Note 1) 2
Reverse Recovery Charge QRR 2.4 μC 2

CAD (KiCad official)

  • Symbol: 7N65F
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: ITO-220AB-3 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GOODWORK datasheet (5 pp, sha256 663d0315ac7ba1f0, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF