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74LVCE1G32SE-7

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Diodes Incorporated Logic Gates, SOT-353. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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74LVCE1G32SE-7

Diodes Incorporated · Logic Gates · SOT-353

74LVCE1G32SE-7 from Diodes Incorporated, in a SOT-353. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A input Data input A of the 2-input OR gate, tolerant to 5.5 V (input voltage range 0 to 5.5 V); unused inputs must be held at Vcc or ground.
2 B input Data input B of the 2-input OR gate, tolerant to 5.5 V (input voltage range 0 to 5.5 V); unused inputs must be held at Vcc or ground.
3 GND power_in Ground.
4 Y output Data output Y = A + B with a standard totem-pole stage, rated for 24 mA high or low drive at VCC = 3 V and disabled by the IOFF circuitry when the device is powered down.
5 Vcc power_in Supply voltage, operating range 1.4 V to 5.5 V.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-353
Category Logic
Pins 5

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
ESD Human Body Model ESD HBM 2 kV 3
ESD Machine Model ESD MM 200 V 3
Supply voltage range VCC -0.5 6.5 V 3
Input voltage range VI -0.5 6.5 V 3
Output voltage, high impedance or IOFF state Vo -0.5 6.5 V high impedance or IOFF state 3
Output voltage, high or low state Vo -0.3 6.5 V high or low state; max printed VCC +0.5 V 3
Input clamp current IIK -50 mA VI<0 3
Output clamp current IOK -50 mA 3
Continuous output current IO -50 50 mA 3
Continuous current through Vdd or GND -100 100 mA 3
Operating junction temperature TJ -40 150 °C 3
Storage temperature TSTG -65 150 °C 3
Operating voltage VCC 1.4 5.5 V Operating 4
Data retention voltage VCC 1.2 V Data retention only 4
High-level input voltage VIH 0.65 x VCC VCC = 1.4 V to 1.95 V 4
High-level input voltage VIH 1.7 V VCC = 2.3 V to 2.7 V 4
High-level input voltage VIH 2 V VCC = 3 V to 3.6 V 4
High-level input voltage VIH 0.7 x VCC VCC = 4.5 V to 5.5 V 4
Low-level input voltage VIL 0.35 x VCC VCC = 1.4 V to 1.95 V 4
Low-level input voltage VIL 0.7 V VCC = 2.3 V to 2.7 V 4
Low-level input voltage VIL 0.8 V VCC = 3 V to 3.6 V 4
Low-level input voltage VIL 0.3 x VCC VCC = 4.5 V to 5.5 V 4
High-level output current IOH -3 mA Vcc=1.4 V 4
High-level output current IOH -16 mA VCC = 3 V 4
High-level output current IOH -24 mA VCC = 3 V 4
High-level output current IOH -32 mA VCC = 4.5 V 4
Low-level output current IOL 3 mA Vcc=1.4 V 4
Low-level output current IOL 16 mA VCC = 3 V 4
Low-level output current IOL 24 mA VCC = 3 V 4
Low-level output current IOL 32 mA VCC = 4.5 V 4
Input transition rise or fall rate Δt/ΔV 20 ns/V VCC = 1.4 to 3V 4
Input transition rise or fall rate Δt/ΔV 10 ns/V VCC = 3.3 V ± 0.3 V 4
Input transition rise or fall rate Δt/ΔV 5 ns/V VCC = 5 V ± 0.5 V 4
Operating free-air temperature TA -40 85 ºC 4
High level output voltage VOH 1.05 V IOH = -3mA, Vcc 1.4 V 5
High level output voltage VOH 1.2 V IOH = -4mA, Vcc 1.65 V 5
High level output voltage VOH 1.9 V IOH = -8mA, Vcc 2.3V 5
High level output voltage VOH 2.4 V IOH = -16mA, Vcc 3 V 5
High level output voltage VOH 2.3 V IOH = -24mA, Vcc 3 V 5
High level output voltage VOH 3.8 V IOH = -32mA, Vcc 4.5 V 5
Low-level output voltage VOL 0.1 V IOL = 100μA, Vcc 1.4 V to 5.5V 5
Low-level output voltage VOL 0.4 V IOL = 3mA, Vcc 1.4 V 5
Low-level output voltage VOL 0.45 V IOL = 4mA, Vcc 1.65 V 5
Low-level output voltage VOL 0.3 V IOL = 8mA, Vcc 2.3V 5
Low-level output voltage VOL 0.55 V IOL = 24mA, Vcc 3 V 5
Input current II -5 5 μA VI = 5.5 V or GND, Vcc 0 to 5.5 V 5
Power down leakage current IOFF -10 10 μA VI or VO = 5.5V, Vcc 0 5
Supply current ICC 10 μA VI = 5.5V of GND, IO=0, Vcc 1.4 V to 5.5V 5
Additional supply current ΔICC 500 μA One input at VCC, 0.6 V, other inputs at VCC or GND, Vcc 3 V to 5.5V 5
Input capacitance Ci 3.3 3.5 pF Vi = VCC, or GND 5
Thermal resistance junction-to-ambient θJA 371 °C/W SOT353 (Note 5) 5
Thermal resistance junction-to-case θJC 143 °C/W SOT353 (Note 5) 5
Propagation delay A or B to Y tpd 0.7 2.9 ns Vcc = 3.3 V ± 0.3V, CL = 15pF 6
Propagation delay A or B to Y tpd 0.9 3.6 ns Vcc = 3.3 V ± 0.3V, CL = 30 or 50pF 6

CAD (KiCad official)

  • Symbol: 74LVCE1G32SE-7
  • Footprint: Package_TO_SOT_SMD:SOT-353_SC-70-5
  • 3D model: SOT-353 (KiCad packages3D, STEP)
  • 3D model files: 74lvce1g32se-7-etched.step / 74lvce1g32se-7-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 74lvce1g32se-7.step / 74lvce1g32se-7.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (14 pp, sha256 5c96b592c58cf184, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF