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Contents

README

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74LVC1G125W5-7

Diodes Incorporated · Buffers / Drivers · SOT-25-5

74LVC1G125W5-7 from Diodes Incorporated, in a SOT-25-5. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 OE input Active-low output enable; a HIGH level puts output Y in the high-impedance state, and the input tolerates up to 5.5V.
2 A input Data input, tolerant to 5.5V, with VIH of 2V minimum at VCC = 3V to 3.6V.
3 GND power_in Ground.
4 Y tri_state 3-state non-inverting data output that goes high-impedance when OE is HIGH, with ±24mA drive at 3.3V.
5 VCC power_in Supply voltage, 1.65V to 5.5V operating range.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-25-5
Category Logic ICs
Pins 5

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply Voltage Range (operating) VCC 1.65 5.5 V Operating 3
Supply Voltage (data retention only) VCC 1.5 V Data Retention Only 3
Input Voltage VI 0 5.5 V 3
Output Voltage VO 0 V max = VCC 3
Operating Free-Air Temperature TA -40 125 °C 3
High-Level Input Voltage VIH 2 V VCC = 3V to 3.6V 3
Low-Level Input Voltage VIL 0.8 V VCC = 3V to 3.6V 3
High-Level Output Current IOH -24 mA VCC = 3V 3
Low-Level Output Current IOL 24 mA VCC = 3V 3
Input Transition Rise or Fall Rate Δt/ΔV 10 ns/V VCC = 3.3V ± 0.3V 3
Supply Voltage Range VCC -0.5 6.5 V 3
Input Voltage Range VI -0.5 6.5 V 3
Output Voltage in High Impedance or IOFF State VO -0.5 6.5 V 3
Output Voltage in High or Low State VO -0.5 V max = VCC + 0.5 V 3
Input Clamp Current IIK -50 mA VI < 0 3
Output Clamp Current IOK -50 mA 3
Continuous Output Current IO -50 50 mA ±50 3
Continuous Current Through VCC or GND ICC, IGN -100 100 mA ±100 3
Operating Junction Temperature TJ -40 150 °C 3
Storage Temperature TSTG -65 150 °C 3
ESD HBM ESD HBM 2 kV Human Body Model 3
ESD CDM ESD CDM 1 kV Charged Device Model 3
ESD MM ESD MM 200 V Machine Model 3
High-Level Output Voltage VOH 2.4 V IOH = -16mA, VCC = 3V, -40°C to +85°C 4
High-Level Output Voltage VOH 2.2 V IOH = -16mA, VCC = 3V, -40°C to +125°C 4
High-Level Output Voltage VOH 2.3 V IOH = -24mA, VCC = 3V, -40°C to +85°C 4
High-Level Output Voltage VOH 2 V IOH = -24mA, VCC = 3V, -40°C to +125°C 4
High-Level Output Voltage VOH 3.8 V IOH = -32mA, VCC = 4.5V, -40°C to +85°C 4
High-Level Output Voltage VOH 3.4 V IOH = -32mA, VCC = 4.5V, -40°C to +125°C 4
High-Level Output Voltage VOH 1.2 V IOH = -4mA, VCC = 1.65V, -40°C to +85°C 4
High-Level Output Voltage VOH 1.9 V IOH = -8mA, VCC = 2.3V, -40°C to +85°C 4
Low-Level Output Voltage VOL 0.1 V IOL = 100μA, VCC = 1.65V to 5.5V, -40°C to +85°C 4
Low-Level Output Voltage VOL 0.4 V IOL = 16mA, VCC = 3V, -40°C to +85°C 4
Low-Level Output Voltage VOL 0.6 V IOL = 16mA, VCC = 3V, -40°C to +125°C 4
Low-Level Output Voltage VOL 0.55 V IOL = 24mA, VCC = 3V, -40°C to +85°C 4
Low-Level Output Voltage VOL 0.8 V IOL = 24mA, VCC = 3V, -40°C to +125°C 4
Input Current II 0.1 5 μA VI = 5.5 V or GND, VCC = 0 to 5.5V, -40°C to +85°C (typ ±0.1, max ±5) 4
Input Current II 100 μA VI = 5.5 V or GND, VCC = 0 to 5.5V, -40°C to +125°C (±100) 4
Power Down Leakage Current IOFF 10 μA VI or VO = 5.5V, VCC = 0V, -40°C to +85°C (±10) 4
Power Down Leakage Current IOFF 200 μA VI or VO = 5.5V, VCC = 0V, -40°C to +125°C (±200) 4
Z State Leakage Current IOZ 0.1 10 μA VO = 0 to 5.5V, VCC = 3.6V, -40°C to +85°C 4
Z State Leakage Current IOZ 20 μA VO = 0 to 5.5V, VCC = 3.6V, -40°C to +125°C 4
Supply Current ICC 0.1 10 μA VI = 5.5V or GND, IO = 0, VCC = 5.5V, -40°C to +85°C 4
Supply Current ICC 200 μA VI = 5.5V or GND, IO = 0, VCC = 5.5V, -40°C to +125°C 4
Additional Supply Current ΔICC 500 μA Input at VCC -0.6V, VCC = 3V to 5.5V, -40°C to +85°C 4
Additional Supply Current ΔICC 5000 μA Input at VCC -0.6V, VCC = 3V to 5.5V, -40°C to +125°C 4
Propagation Delay A to Y tpd 0.5 2.1 4.5 ns VCC = 3.3V ± 0.3V, -40°C to +85°C 5
Propagation Delay A to Y tpd 0.5 6 ns VCC = 3.3V ± 0.3V, -40°C to +125°C 5
Enable Time OE to Y ten 0.5 2.4 5.3 ns VCC = 3.3V ± 0.3V, -40°C to +85°C 5
Disable Time OE to Y tdis 0.5 3.1 5 ns VCC = 3.3V ± 0.3V, -40°C to +85°C 5
Thermal Resistance Junction-to-Ambient SOT25 θJA 204 °C/W SOT25, FR-4, 2oz copper, minimum recommended pad layout 4
Thermal Resistance Junction-to-Case SOT25 θJC 52 °C/W SOT25, FR-4, 2oz copper, minimum recommended pad layout 4
Input Capacitance Ci 5 pF Vi = VCC, or GND, VCC = 3.3V 4
Power Dissipation Capacitance (outputs enabled) Cpd 19 pF Outputs Enabled, f = 10MHz, VCC = 3.3V, TA = +25°C 5
Power Dissipation Capacitance (outputs disabled) Cpd 3 pF Outputs Disabled, f = 10MHz, VCC = 3.3V, TA = +25°C 5

CAD (KiCad official)

  • Symbol: 74LVC1G125W5-7
  • Footprint: Package_TO_SOT_SMD:SOT-23-5
  • 3D model: SOT-25-5 (KiCad packages3D, STEP)
  • 3D model files: 74lvc1g125w5-7-etched.step / 74lvc1g125w5-7-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 74lvc1g125w5-7.step / 74lvc1g125w5-7.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (16 pp, sha256 17d7c5d5ce1c7cff, retrieved 2026-10-23, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF