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74HCT125S14-13

Diodes Incorporated · Buffers, Drivers, Receivers, Transceivers · SO-14

74HCT125S14-13 from Diodes Incorporated, in a SO-14. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 1OE input Data enable input for buffer 1, active low; a high level places output 1Y in the high impedance state.
2 1A input Data input of buffer 1, TTL voltage level compatible with Schmitt trigger action.
3 1Y output Data output of buffer 1 with 3-state capability.
4 2OE input Data enable input for buffer 2, active low; a high level places output 2Y in the high impedance state.
5 2A input Data input of buffer 2, TTL voltage level compatible with Schmitt trigger action.
6 2Y output Data output of buffer 2 with 3-state capability.
7 GND power_in Ground reference for the device.
8 3Y output Data output of buffer 3 with 3-state capability.
9 3A input Data input of buffer 3, TTL voltage level compatible with Schmitt trigger action.
10 3OE input Data enable input for buffer 3, active low; a high level places output 3Y in the high impedance state.
11 4Y output Data output of buffer 4 with 3-state capability (pin table text truncated; see review note).
12 4A input Data input of buffer 4, TTL voltage level compatible with Schmitt trigger action.
13 4OE input Data enable input for buffer 4, active low; a high level places output 4Y in the high impedance state.
14 VCC power_in Supply voltage; recommended operating range 4.5 V to 5.5 V, absolute maximum range -0.5 to +7.0 V.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SO-14
Category Logic
Pins 14

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply Voltage VCC 4.5 5.5 V 3
Input Voltage VI 0 V 3
Output Voltage VO 0 V 3
Input Transition Rise or Fall Rate Δt/ΔV 500 ns/V VCC = 4.5V to 5.5V 3
Operating Free-Air Temperature TA -40 125 °C 3
ESD HBM Human Body Model ESD Protection 2 KV 3
ESD CDM Charged Device Model ESD Protection 1 KV 3
ESD MM Machine Model ESD Protection 200 V 3
Supply Voltage Range VCC -0.5 7 V 3
Input Voltage Range VI -0.5 7 V 3
Input Clamp Current IIK -20 20 mA VI < -0.5V or Vi > VCC +0.5V 3
Output Clamp Current IOK -20 20 mA VO < -0.5V or VO > VCC +0.5V 3
Continuous Output Current IO -25 25 mA -0.5V < VO VCC +0.5V 3
Continuous Current Through Vcc ICC 50 mA 3
Continuous Current Through GND IGND -50 mA 3
Operating Junction Temperature TJ -40 150 °C 3
Storage Temperature TSTG -65 150 °C 3
Total Power Dissipation PTOT 500 mW 3
High-Level Input Voltage VIH 2 V VCC 4.5V to 5.5V; TA = -40°C to +85°C 3
Low-Level Input Voltage VIL 0.8 V VCC 4.5V to 5.5V; TA = -40°C to +85°C 3
High-Level Output Voltage VOH 4.4 V IOH = -20μA; VCC 4.5V; TA = -40°C to +85°C 3
High-Level Output Voltage VOH 3.84 V IOH = -4mA; VCC 4.5V; TA = -40°C to +85°C 3
High-Level Output Voltage VOH 3.7 V IOH = -4mA; VCC 4.5V; TA = -40°C to +125°C 3
Low-Level Output Voltage VOL 0.1 V IOL = 20μA; VCC 4.5V; TA = -40°C to +85°C 3
Low-Level Output Voltage VOL 0.33 V IOL = 4.0mA; VCC 4.5V; TA = -40°C to +85°C 3
Low-Level Output Voltage VOL 0.4 V IOL = 4.0mA; VCC 4.5V; TA = -40°C to +125°C 3
Z State Leakage Current IOZ -5 5 μA VO = 0 to 5.5V; VCC 5.5V; TA = -40°C to +85°C 3
Z State Leakage Current IOZ -10 10 μA VO = 0 to 5.5V; VCC 5.5V; TA = -40°C to +125°C 3
Input Current II -1 1 μA VI =GND to 6.0V; VCC 6.0V; TA = -40°C to +85°C 3
Supply Current ICC 20 μA VI = GND or VCC, IO = 0; VCC 6.0V; TA = -40°C to +85°C 3
Supply Current ICC 40 μA VI = GND or VCC, IO = 0; VCC 6.0V; TA = -40°C to +125°C 3
Additional Supply Current ΔICC 675 μA One Input at VCC -2.1V; Other Pins at VCC or GND; VCC 4.5V to 5.5V; TA = -40°C to +85°C 3
Additional Supply Current ΔICC 735 μA One Input at VCC -2.1V; Other Pins at VCC or GND; VCC 4.5V to 5.5V; TA = -40°C to +125°C 3
Propagation Delay AN to YN tPD 15 25 ns Figure 1 CL = 50pF; VCC 4.5V; TA = +25°C 4
Propagation Delay AN to YN tPD 15 31 ns Figure 1 CL = 50pF; VCC 4.5V; TA = -40°C to +85°C 4
Propagation Delay AN to YN tPD 15 38 ns Figure 1 CL = 50pF; VCC 4.5V; TA = -40°C to +125°C 4
Enable Time OEN to YN tEN 15 28 ns Figure 1 CL = 50pF; VCC 4.5V; TA = +25°C 4
Enable Time OEN to YN tEN 15 35 ns Figure 1 CL = 50pF; VCC 4.5V; TA = -40°C to +85°C 4
Enable Time OEN to YN tEN 15 42 ns Figure 1 CL = 50pF; VCC 4.5V; TA = -40°C to +125°C 4
Disable Time OEN to YN tDIS 15 25 ns Figure 1 CL = 50pF; VCC 4.5V; TA = +25°C 4
Disable Time OEN to YN tDIS 15 31 ns Figure 1 CL = 50pF; VCC 4.5V; TA = -40°C to +85°C 4
Disable Time OEN to YN tDIS 15 38 ns Figure 1 CL = 50pF; VCC 4.5V; TA = -40°C to +125°C 4
Transition Time tt 5 12 ns Figure 1 CL = 50pF; VCC 4.5V; TA = +25°C 4
Transition Time tt 5 15 ns Figure 1 CL = 50pF; VCC 4.5V; TA = -40°C to +85°C 4
Transition Time tt 5 18 ns Figure 1 CL = 50pF; VCC 4.5V; TA = -40°C to +125°C 4
Power Dissipation Capacitance per Gate Cpd 24 pF f = 1 MHz; VCC = 5.5V 4
Input Capacitance CI 3.5 pF VI = VCC, or GND; VCC = 5.5V 4

CAD (KiCad official)

  • Symbol: 74HCT125S14-13
  • Footprint: Adom_Gen:Diodes_Incorporated_74
  • 3D model: SO-14 (KiCad packages3D, STEP)
  • 3D model files: 74hct125s14-13-etched.step / 74hct125s14-13-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 74hct125s14-13.step / 74hct125s14-13.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (8 pp, sha256 3f577128952cbe00, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF