component
74HC4051BQ
Public Made by Adomby adom
NXP Semicon Analog Switches, Multiplexers, DHVQFN-16-EP(2.5x3.5). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown74HC4051BQ
NXP Semicon · Analog Switches, Multiplexers · DHVQFN-16-EP(2.5x3.5)
74HC4051BQ from NXP Semicon, in a DHVQFN-16-EP(2.5x3.5). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Y4 | bidirectional | Independent input/output of channel 4, connected to Z when E is LOW and S2 S1 S0 = H L L. |
| 2 | Y6 | bidirectional | Independent input/output of channel 6, connected to Z when E is LOW and S2 S1 S0 = H H L. |
| 3 | Z | bidirectional | Common input/output that connects to the selected Yn channel; all switches are off when E is HIGH. |
| 4 | Y7 | bidirectional | Independent input/output of channel 7, connected to Z when E is LOW and S2 S1 S0 = H H H. |
| 5 | Y5 | bidirectional | Independent input/output of channel 5, connected to Z when E is LOW and S2 S1 S0 = H L H. |
| 6 | E | input | Enable input, active LOW; when HIGH the switches are turned off. |
| 7 | VEE | power_in | Supply voltage; voltages at Yn and Z may not exceed VCC or VEE. |
| 8 | GND | power_in | Ground supply voltage, the 0 V reference for the limiting values. |
| 9 | S2 | input | Select input; with S1 and S0 it selects the channel per the function table. |
| 10 | S1 | input | Select input; with S2 and S0 it selects the channel per the function table. |
| 11 | S0 | input | Select input; least significant bit of the channel select per the function table. |
| 12 | Y3 | bidirectional | Independent input/output of channel 3, connected to Z when E is LOW and S2 S1 S0 = L H H. |
| 13 | Y0 | bidirectional | Independent input/output of channel 0, connected to Z when E is LOW and S2 S1 S0 = L L L. |
| 14 | Y1 | bidirectional | Independent input/output of channel 1, connected to Z when E is LOW and S2 S1 S0 = L L H. |
| 15 | Y2 | bidirectional | Independent input/output of channel 2, connected to Z when E is LOW and S2 S1 S0 = L H L. |
| 16 | VCC | power_in | Supply voltage; the absolute maximum VCC is -0.5 V to +11.0 V. |
| 17 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | NXP Semicon |
| Package | DHVQFN-16-EP(2.5x3.5) |
| Category | Interface |
| Pins | 17 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| VCC supply voltage | VCC | -0.5 | 11 | V | 5 | ||
| input clamping current | IIK | -20 | 20 | mA | VI < -0.5 V or VI > VCC + 0.5 V | 5 | |
| switch clamping current | ISK | -20 | 20 | mA | VSW < -0.5 V or VSW > VCC + 0.5 V | 5 | |
| switch current | ISW | -25 | 25 | mA | -0.5 V < VSW < VCC + 0.5 V | 5 | |
| supply current | IEE | -20 | 20 | mA | 5 | ||
| supply current | ICC | 50 | mA | 5 | |||
| ground current | IGND | -50 | mA | 5 | |||
| storage temperature | Tstg | -65 | 150 | °C | 5 | ||
| power dissipation per switch | P | 100 | mW | 5 | |||
| total power dissipation | Ptot | 500 | mW | SOT763-1 (DHVQFN16) | 5 | ||
| VCC supply voltage (VCC - GND) | VCC | 2 | 5 | 10 | V | see Fig. 5 and Fig. 6 | 6 |
| VCC supply voltage (VCC - VEE) | VCC - VEE | 2 | 5 | 10 | V | see Fig. 5 and Fig. 6 | 6 |
| ambient temperature | Tamb | -40 | 25 | 125 | °C | 6 | |
| input transition rise and fall rate | Δt/ΔV | 625 | ns/V | VCC = 2.0 V | 6 | ||
| input transition rise and fall rate | Δt/ΔV | 1.67 | 139 | ns/V | VCC = 4.5 V | 6 | |
| input transition rise and fall rate | Δt/ΔV | 83 | ns/V | VCC = 6.0 V | 6 | ||
| input transition rise and fall rate | Δt/ΔV | 31 | ns/V | VCC = 10.0 V | 6 | ||
| HIGH-level input voltage | VIH | 1.5 | 1.2 | V | Tamb = 25 °C; VCC = 2.0 V | 9 | |
| HIGH-level input voltage | VIH | 3.15 | 2.4 | V | Tamb = 25 °C; VCC = 4.5 V | 9 | |
| HIGH-level input voltage | VIH | 4.2 | 3.2 | V | Tamb = 25 °C; VCC = 6.0 V | 9 | |
| HIGH-level input voltage | VIH | 6.3 | 4.7 | V | Tamb = 25 °C; VCC = 9.0 V | 9 | |
| LOW-level input voltage | VIL | 0.8 | 0.5 | V | Tamb = 25 °C; VCC = 2.0 V | 9 | |
| LOW-level input voltage | VIL | 2.1 | 1.35 | V | Tamb = 25 °C; VCC = 4.5 V | 9 | |
| LOW-level input voltage | VIL | 2.8 | 1.8 | V | Tamb = 25 °C; VCC = 6.0 V | 9 | |
| LOW-level input voltage | VIL | 4.3 | 2.7 | V | Tamb = 25 °C; VCC = 9.0 V | 9 | |
| input leakage current | II | -0.1 | 0.1 | μA | Tamb = 25 °C; VEE = 0 V; VI = VCC or GND; VCC = 6.0 V | 9 | |
| input leakage current | II | -0.2 | 0.2 | μA | Tamb = 25 °C; VEE = 0 V; VI = VCC or GND; VCC = 10.0 V | 9 | |
| OFF-state leakage current per channel | IS(OFF) | -0.1 | 0.1 | μA | Tamb = 25 °C; VCC = 10.0 V; VEE = 0 V; VI = VIH or VIL; /VSW/ = VCC - VEE; per channel | 9 | |
| OFF-state leakage current all channels | IS(OFF) | -0.4 | 0.4 | μA | Tamb = 25 °C; VCC = 10.0 V; VEE = 0 V; VI = VIH or VIL; /VSW/ = VCC - VEE; all channels | 9 | |
| ON-state leakage current | IS(ON) | -0.4 | 0.4 | μA | Tamb = 25 °C; VCC = 10.0 V; VEE = 0 V; VI = VIH or VIL; /VSW/ = VCC - VEE | 9 | |
| supply current | ICC | 8 | μA | Tamb = 25 °C; VEE = 0 V; VI = VCC or GND; Vis = VEE or VCC; Vos = VCC or VEE; VCC = 6.0 V | 9 | ||
| supply current | ICC | 16 | μA | Tamb = 25 °C; VEE = 0 V; VI = VCC or GND; Vis = VEE or VCC; Vos = VCC or VEE; VCC = 10.0 V | 9 | ||
| HIGH-level input voltage | VIH | 1.5 | V | Tamb = -40 °C to +125 °C; VCC = 2.0 V | 10 | ||
| HIGH-level input voltage | VIH | 3.15 | V | Tamb = -40 °C to +125 °C; VCC = 4.5 V | 10 | ||
| HIGH-level input voltage | VIH | 4.2 | V | Tamb = -40 °C to +125 °C; VCC = 6.0 V | 10 | ||
| HIGH-level input voltage | VIH | 6.3 | V | Tamb = -40 °C to +125 °C; VCC = 9.0 V | 10 | ||
| LOW-level input voltage | VIL | 0.5 | V | Tamb = -40 °C to +125 °C; VCC = 2.0 V | 10 | ||
| LOW-level input voltage | VIL | 1.35 | V | Tamb = -40 °C to +125 °C; VCC = 4.5 V | 10 | ||
| LOW-level input voltage | VIL | 1.8 | V | Tamb = -40 °C to +125 °C; VCC = 6.0 V | 10 | ||
| LOW-level input voltage | VIL | 2.7 | V | Tamb = -40 °C to +125 °C; VCC = 9.0 V | 10 | ||
| input leakage current | II | -1 | 1 | μA | Tamb = -40 °C to +125 °C; VEE = 0 V; VI = VCC or GND; VCC = 6.0 V | 11 | |
| input leakage current | II | -2 | 2 | μA | Tamb = -40 °C to +125 °C; VEE = 0 V; VI = VCC or GND; VCC = 10.0 V | 11 | |
| OFF-state leakage current per channel | IS(OFF) | -1 | 1 | μA | Tamb = -40 °C to +125 °C; VCC = 10.0 V; VEE = 0 V; VI = VIH or VIL; /VSW/ = VCC - VEE; per channel | 11 | |
| OFF-state leakage current all channels | IS(OFF) | -4 | 4 | μA | Tamb = -40 °C to +125 °C; VCC = 10.0 V; VEE = 0 V; VI = VIH or VIL; /VSW/ = VCC - VEE; all channels | 11 | |
| ON-state leakage current | IS(ON) | -4 | 4 | μA | Tamb = -40 °C to +125 °C; VCC = 10.0 V; VEE = 0 V; VI = VIH or VIL; /VSW/ = VCC - VEE | 11 | |
| supply current | ICC | 160 | μA | Tamb = -40 °C to +125 °C; VEE = 0 V; VI = VCC or GND; Vis = VEE or VCC; Vos = VCC or VEE; VCC = 6.0 V | 11 | ||
| supply current | ICC | 320 | μA | Tamb = -40 °C to +125 °C; VEE = 0 V; VI = VCC or GND; Vis = VEE or VCC; Vos = VCC or VEE; VCC = 10.0 V | 11 | ||
| ON resistance (peak) | RON(peak) | 270 | Ω | Tamb = -40 °C to +125 °C; Vis = VCC to VEE; VCC = 4.5 V; VEE = 0 V; ISW = 1000 μA | 8 | ||
| ON resistance (peak) | RON(peak) | 240 | Ω | Tamb = -40 °C to +125 °C; Vis = VCC to VEE; VCC = 6.0 V; VEE = 0 V; ISW = 1000 μA | 8 | ||
| ON resistance (peak) | RON(peak) | 195 | Ω | Tamb = -40 °C to +125 °C; Vis = VCC to VEE; VCC = 4.5 V; VEE = -4.5 V; ISW = 1000 μA | 8 | ||
| ON resistance (peak) | RON(peak) | 210 | Ω | Tamb = -40 °C to +125 °C; Vis = VEE; VCC = 4.5 V; VEE = 0 V; ISW = 1000 μA | 8 | ||
| ON resistance (peak) | RON(peak) | 180 | Ω | Tamb = -40 °C to +125 °C; Vis = VEE; VCC = 6.0 V; VEE = 0 V; ISW = 1000 μA | 8 | ||
| ON resistance (peak) | RON(peak) | 160 | Ω | Tamb = -40 °C to +125 °C; Vis = VEE; VCC = 4.5 V; VEE = -4.5 V; ISW = 1000 μA | 8 | ||
| ON resistance (rail) | RON(rail) | 240 | Ω | Tamb = -40 °C to +125 °C; Vis = VCC; VCC = 4.5 V; VEE = 0 V; ISW = 1000 μA | 8 | ||
| ON resistance (rail) | RON(rail) | 210 | Ω | Tamb = -40 °C to +125 °C; Vis = VCC; VCC = 6.0 V; VEE = 0 V; ISW = 1000 μA | 8 | ||
| ON resistance (rail) | RON(rail) | 180 | Ω | Tamb = -40 °C to +125 °C; Vis = VCC; VCC = 4.5 V; VEE = -4.5 V; ISW = 1000 μA | 8 |
CAD (KiCad official)
- Symbol:
74HC4051BQ - Footprint:
Package_DFN_QFN:DHVQFN-16-1EP_2.5x3.5mm_P0.5mm_EP1x2mm - 3D model: DHVQFN-16-EP(2.5x3.5), generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.9 mm nominal VQFN height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
- 3D model files:
74hc4051bq-etched.step/74hc4051bq-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);74hc4051bq.step/74hc4051bq.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: NXP Semicon datasheet (28 pp, sha256
e5b40e804e4dea04, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).