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74HC125T14-13

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Diodes Incorporated Buffers / Drivers, TSSOP-14. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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74HC125T14-13

Diodes Incorporated · Buffers / Drivers · TSSOP-14

74HC125T14-13 from Diodes Incorporated, in a TSSOP-14. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 1OE input Active-low data enable input; driving it high places output 1Y in the high-impedance state.
2 1A input Data input for buffer 1, with Schmitt-trigger action at all inputs.
3 1Y tri_state 3-state data output of buffer 1, high impedance when 1OE is high.
4 2OE input Active-low data enable input; driving it high places output 2Y in the high-impedance state.
5 2A input Data input for buffer 2, with Schmitt-trigger action at all inputs.
6 2Y tri_state 3-state data output of buffer 2, high impedance when 2OE is high.
7 GND power_in Ground reference for the device.
8 3Y tri_state 3-state data output of buffer 3, high impedance when 3OE is high.
9 3A input Data input for buffer 3, with Schmitt-trigger action at all inputs.
10 3OE input Active-low data enable input; driving it high places output 3Y in the high-impedance state.
11 4Y tri_state 3-state data output of buffer 4, high impedance when 4OE is high.
12 4A input Data input for buffer 4, with Schmitt-trigger action at all inputs.
13 4OE input Active-low data enable input; driving it high places output 4Y in the high-impedance state.
14 VCC power_in Supply voltage, operating range 2.0V to 6.0V.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package TSSOP-14
Category Logic ICs
Pins 14

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
High-level Input Voltage VIH 1.5 V VCC = 2.0V 4
High-level Input Voltage VIH 3.15 V VCC = 4.5V 4
High-level Input Voltage VIH 4.2 V VCC = 6.0V 4
Low-level Input Voltage VIL 0.5 V VCC = 2.0V 4
Low-level Input Voltage VIL 1.35 V VCC = 4.5V 4
Low-level Input Voltage VIL 1.8 V VCC = 6.0V 4
High-level Output Voltage VOH 1.9 V IOH = -20μA, VCC = 2.0V 4
High-level Output Voltage VOH 4.4 V IOH = -20μA, VCC = 4.5V 4
High-level Output Voltage VOH 5.9 V IOH = -20μA, VCC = 6.0V 4
High-level Output Voltage VOH 3.84 V IOH = -4.0mA, VCC = 4.5V 4
High-level Output Voltage VOH 5.34 V IOH = -5.2mA, VCC = 6.0V 4
Low-level Output Voltage VOL 0.1 V IOL = 20μA, VCC = 2.0V 4
Low-level Output Voltage VOL 0.33 V IOL = 4mA, VCC = 4.5V 4
Z State Leakage Current IOZ -5 5 μA VO = 0 to 6.0V, VI = GND or 6.0V, VCC = 6.0V 4
Input Current II -1 1 μA VI = GND to 5.5V, VCC = 6.0V 4
Supply Current ICC 20 μA VI = GND or VCC, IO = 0, VCC = 6.0V 4
Supply Voltage Range VCC -0.5 7 V 3
Input Voltage Range VI -0.5 7 V 3
Input Clamp Current IIK -20 20 mA VI < -0.5V or Vi > VCC +0.5V 3
Output Clamp Current IOK -20 20 mA VO < -0.5V or VO > VCC +0.5V 3
Continuous Output Current IO -25 25 mA -0.5V < VO VCC +0.5V 3
Continuous Current Through VCC ICC 50 mA 3
Continuous Current Through GND IGND -50 mA 3
Operating Junction Temperature TJ -40 150 °C 3
Storage Temperature TSTG -65 150 °C 3
Total Power Dissipation PTOT 500 mW 3
ESD Human Body Model ESD HBM 2 KV 3
ESD Charged Device Model ESD CDM 1 KV 3
ESD Machine Model ESD MM 200 V 3
Supply Voltage VCC 2 6 V 3
Input Voltage VI 0 V 3
Output Voltage VO 0 V 3
Input Transition Rise or Fall Rate Δt/ΔV 625 ns/V VCC = 2.0V 3
Input Transition Rise or Fall Rate Δt/ΔV 140 ns/V VCC = 4.5V 3
Input Transition Rise or Fall Rate Δt/ΔV 85 ns/V VCC = 6.0V 3
Operating Free-Air Temperature TA -40 125 °C 3
Propagation Delay AN to YN tPD 30 125 ns Figure 1, CL = 50 pF, VCC = 2.0V 4
Propagation Delay AN to YN tPD 11 25 ns Figure 1, CL = 50 pF, VCC = 4.5V 4
Propagation Delay AN to YN tPD 9 21 ns Figure 1, CL = 50 pF, VCC = 6.0V 4
Enable Time OEN to YN tEN 41 125 ns Figure 1, CL = 50 pF, VCC = 2.0V 4
Enable Time OEN to YN tEN 15 25 ns Figure 1, CL = 50 pF, VCC = 4.5V 4
Enable Time OEN to YN tEN 12 21 ns Figure 1, CL = 50 pF, VCC = 6.0V 4
Disable Time OE to YN tDIS 41 125 ns Figure 1, CL = 50 pF, VCC = 2.0V 4
Disable Time OE to YN tDIS 15 25 ns Figure 1, CL = 50 pF, VCC = 4.5V 4
Disable Time OE to YN tDIS 12 21 ns Figure 1, CL = 50 pF, VCC = 6.0V 4
Transition time tt 14 60 ns Figure 1, CL = 50 pF, VCC = 2.0V 4
Transition time tt 5 12 ns Figure 1, CL = 50 pF, VCC = 4.5V 4
Transition time tt 4 10 ns Figure 1, CL = 50 pF, VCC = 6.0V 4
Power Dissipation Capacitance per Gate Cpd 22 pF f = 1MHz, VCC = 6V 4
Input Capacitance CI 4 pF VI = VCC, or GND 4

CAD (KiCad official)

  • Symbol: 74HC125T14-13
  • Footprint: Package_SO:TSSOP-14_4.4x5mm_P0.65mm
  • 3D model: TSSOP-14 (KiCad packages3D, STEP)
  • 3D model files: 74hc125t14-13-etched.step / 74hc125t14-13-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 74hc125t14-13.step / 74hc125t14-13.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (9 pp, sha256 d3e2ae3e0aa50725, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF